Method for reducing leakage current on surface of base plate in thin film transistor

Abstract

First, multiple Thin Film Transistors (TFT) are formed on a base plate. Next, an insulation layer and a metal layer are formed on TFT in sequence. The metal layer includes a source pole and a drain pole connected to each TFT, and there is a channel region between the source pole and the drain pole. Then, an organic material layer is covered on the metal layer and the insulation layer, and a transparent conducting layer is formed on the organic material layer. In the procedure of forming the organic material layer, since the insulation layer is densified synchronistically, route of current leakage of the base plate is blocked out so as to reduce current leakage on surface.

Description

technical field [0001] The invention relates to a method for reducing the surface leakage current of a thin film transistor substrate, in particular to a method for reducing the surface leakage current of a thin film transistor substrate of a liquid crystal display. Background technique [0002] The liquid crystal display panel structure consists of a thin-film transistor substrate (TFT substrate), a color filter substrate (CF substrate), and a liquid crystal layer disposed between the thin-film transistor substrate and the filter substrate. constituted. The thin film transistor substrate includes a matrix of pixels composed of multiple rows of data lines and multiple columns of scanning lines, and a plurality of pixel driving circuits composed of electronic components such as thin film transistors and capacitors are respectively arranged on each data line and each scanning line of the intersection. For each pixel, the image data signal transmitted by the data line will be...

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Problems solved by technology

Due to the high dielectric constant of silicon nitride, the stray capacitance derived from it is also relatively high, which can easily cause abnormal images

[0006] Moreover, the silicon nitride process has its weak thickness limitation, generally speaking, its thickness is controlled to be less than 5000 angstroms, so the resistance to the invasion of water vapor and other impurities is poor, and it is easy to cause the increase of surface leakage current and affect the components normal operation of

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