Graded barrier low-dark-current mesa type photodiode and manufacturing method thereof
A photodiode and mesa technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of inability to reduce surface leakage current and bulk dark current, so as to reduce surface leakage current, improve reliability, and reduce bulk dark current. Effect
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[0031] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0032] The invention is a mesa-type photodiode with low dark current of graded potential barrier, such as figure 1 As shown, it includes a three-layer mesa structure, N-type mesa a, absorption mesa b, and P-type mesa c connected sequentially from top to bottom, and the bottom layer of the P-type mesa step is a semi-insulating substrate 1 .
[0033] Such as figure 2 As shown, the surface of each mesa of the mesa-type photodiode is covered with a passivation l...
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