Surface passivation method of InAlSb infrared detector
An infrared detector and detector chip technology, applied in the field of infrared detectors, can solve the problems of high power consumption, low reliability and large size of infrared detector components, reduce the surface recombination rate and surface leakage current, and increase the surface The effect of resistivity
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Embodiment 1
[0034] The test result that the InAlSb infrared detector chip in embodiment 1 is completed by optical and electrical testing equipment:
[0035] The performance test result of the infrared device of the above-mentioned embodiment of table 1
[0036]
[0037] Table 2. MIS structure calculation results of the passivation film of the above-mentioned embodiment
[0038]
[0039] According to the test structure analysis in Table 1 and Table 2, this passivation method has a good passivation effect on the surface of InAlSb material, can effectively reduce the surface recombination rate, and increase the surface resistance.
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