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Surface passivation method of InAlSb infrared detector

An infrared detector and detector chip technology, applied in the field of infrared detectors, can solve the problems of high power consumption, low reliability and large size of infrared detector components, reduce the surface recombination rate and surface leakage current, and increase the surface The effect of resistivity

Active Publication Date: 2019-04-05
CHINA AIR TO AIR MISSILE INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the harsh working environment leads to high power consumption, large size, high cost, and low reliability of the infrared detector components as a whole, which brings inconvenience to the practical application of airborne, spaceborne, and missile-borne infrared detectors

Method used

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  • Surface passivation method of InAlSb infrared detector
  • Surface passivation method of InAlSb infrared detector
  • Surface passivation method of InAlSb infrared detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The test result that the InAlSb infrared detector chip in embodiment 1 is completed by optical and electrical testing equipment:

[0035] The performance test result of the infrared device of the above-mentioned embodiment of table 1

[0036]

[0037] Table 2. MIS structure calculation results of the passivation film of the above-mentioned embodiment

[0038]

[0039] According to the test structure analysis in Table 1 and Table 2, this passivation method has a good passivation effect on the surface of InAlSb material, can effectively reduce the surface recombination rate, and increase the surface resistance.

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Abstract

The invention relates to a surface passivation method of an InAlSb infrared detector. The method comprises the steps of 1, immersing an InAlSb detector chip in an organic solvent; 2, immersing the InAlSb detector chip in an acidic solution; 3, putting the InAlSb detector chip into an anodizing solution, setting a anodizing current, turning on a metal electrode, and turning off an anodizing power source to form an anodized film when the resistance value of the chip surface reaches a set value; 4, cleaning the InAlSb detector chip; and 5, then placing the InAlSb detector chip in a PECVD device to prepare a dielectric film. The method can reduce the leakage current on the surface of the infrared detector and increases the device impedance.

Description

technical field [0001] The invention relates to the field of infrared detectors, in particular to an InAlSb infrared detector surface passivation method. Background technique [0002] Infrared light is an important part of the electromagnetic spectrum. It is widely used in military fields due to its unique ability to reflect target characteristics in short-wave, medium-wave, and long-wave bands, such as individual combat, precision guidance, infrared early warning, and satellite mapping. Wait. At present, high-performance military infrared detectors all use low-temperature refrigeration to reduce device noise and improve the signal-to-noise ratio of infrared detectors. However, the harsh working environment leads to high power consumption, large size, high cost, and low reliability of the infrared detector assembly as a whole, which brings inconvenience to the practical application of airborne, spaceborne, and missile-borne infrared detectors. [0003] Taking target detect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0236H01L31/0216C30B33/10
CPCC30B33/10H01L31/02167H01L31/02363H01L31/1844H01L31/1876Y02P70/50
Inventor 李墨吕衍秋朱旭波张利学王郁波
Owner CHINA AIR TO AIR MISSILE INST
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