Dry etching method for two-color HgCdTe device and etching device thereof

Abstract

The invention discloses a dry etching method for a two-color HgCdTe device and an etching device thereof. The device comprises a radio frequency source which is connected with an inductive coupling coil surrounding a reaction chamber, and the other radio frequency source which is connected with a lower electrode at the lower end of the reaction chamber. The method comprises the following steps: forming a photoresist masking graphics on the surface of the HgCdTe device; fixing the HgCdTe device in the etching device, and then vacuumizing the etching device; and leading a mixed gas of argon, hydrogen and methane, and carrying out dry etching. In the mesa molding process of the two-color HgCdTe detector, the invention effectively reduces damage resulted from dry etching on the surface of thedeep mesa two-color device, thus significantly reducing leakage current on the surface of the side wall of the mesa of the two-color device, and solving a series of technical problems of the device such as poor electrical performance, low finished product rate and the like resulted from high surface damage in the mesa molding process of the two-color HgCdTe device.

Description

technical field [0001] The invention relates to the technical field of semiconductor etching, in particular to a dry etching method and an etching device for a two-color mercury cadmium telluride device. Background technique [0002] The two-color infrared focal plane detection technology has significant advantages such as dual-band detection and more ground target information can be obtained. It has broad application prospects in target search, missile early warning detection, intelligence reconnaissance and other military and related civilian fields. [0003] The dry etching process of the HgCdTe two-color detector is one of the key processes of the HgCdTe infrared focal plane detector. The particularity of the HgCdTe material itself makes the mesa dry etching process of the device must achieve ultra-low damage. Mercury cadmium telluride (HgCdTe) is a II-VI compound semiconductor. The mercury (Hg) element in this material has a weak valence bond, is very unstable, and is s...

AI Technical Summary

Problems solved by technology

[0006] The invention provides a low-damage dry etching method and etching device for two-color mercury cadmium telluride devices, which are used to solve the problem of high damage in the deep mesa forming process of mesa devices in the prior art

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