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A kind of passivation method of cadmium zinc telluride crystal surface

A crystal surface, cadmium zinc telluride wafer technology, applied in semiconductor devices, sustainable manufacturing/processing, electrical components, etc., can solve the problems of complexity, heating or ultraviolet irradiation, etc., to achieve low processing cost, no harsh processing conditions, Simple effect of passivation process

Inactive Publication Date: 2016-03-30
SHANGHAI UNIVERSITY OF ELECTRIC POWER
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The current vulcanization method is relatively complicated, such as using (NH 4 ) 2 S or Na 2 S solution anodizes CdZnTe, which can vulcanize CdZnTe in situ, but the disadvantage is that heating or ultraviolet irradiation is required during the treatment process, thereby introducing new defect crystals into CdZnTe crystals. Therefore, it is necessary to invent a A vulcanization technology with simpler process

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  • A kind of passivation method of cadmium zinc telluride crystal surface

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Embodiment 1

[0021] A passivation method for a cadmium zinc telluride crystal surface, specifically comprising the steps of:

[0022] (1) Preparation of passivation solution

[0023] Wash the beaker 3 times with deionized water, slowly add 3.6g of thiourea into the beaker with 40g of deionized water, stir evenly to obtain passivation solution after all the thiourea is dissolved;

[0024] The above passivation solution is calculated by mass ratio, that is, thiourea: deionized water is 9:100;

[0025] (2), passivation treatment

[0026] Put the cadmium zinc telluride wafer with the electrode prepared into the passivation solution obtained in step (1), soak for 11 minutes, and take out the cadmium zinc telluride wafer;

[0027] (3) Cleaning of CdZnTe wafer

[0028] Wash the CdZnTe wafers taken out in step (2) three times with deionized water, and then one time with absolute ethanol;

[0029] (4) Dry the CdZnTe wafer cleaned with absolute ethanol in step (3) with an ear cleaning ball to co...

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Abstract

The invention discloses a passivation method for the surface of cadmium zinc telluride crystal, that is, the passivation solution is firstly prepared and calculated according to the mass ratio, that is, the aqueous solution of thiourea: deionized water is 9:100, and then the prepared Put the cadmium zinc telluride chip of the electrode into the passivation solution for passivation for 11-19 minutes, immediately wash it with a large amount of deionized water for 3-5 times, then wash it once with absolute ethanol, and finally dry it with an ear washing ball, that is Complete passivation of the CdZnTe crystal surface. The passivation method for the surface of the cadmium zinc telluride crystal has the advantages of simple passivation process and low processing cost, and effectively reduces the surface leakage current of the cadmium zinc telluride crystal.

Description

technical field [0001] The invention relates to a passivation method for the surface of a cadmium zinc telluride crystal. The passivation method can reduce the surface defects of the cadmium zinc telluride crystal and reduce the leakage current on the device surface. Background technique [0002] CdZnTe crystals have better ray detection performance than traditional high-energy radiation detectors (mainly doped sodium iodide (NaI(Tl)) scintillators, semiconductor Si(Li) and high-purity Ge, etc., and are used in life sciences , material science and environmental science and other fields have important applications, such as medical imaging and diagnosis, X-ray fluorescence analyzer (XRF), industrial flaw detection, weapon monitoring and security detection, etc. Surface leakage current is an important mechanism to reduce the product of resistivity and carrier mobility lifetime of CdZnTe detectors. Larger leakage current will increase the noise floor of the device and reduce the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/1868Y02P70/50
Inventor 任平范培俊
Owner SHANGHAI UNIVERSITY OF ELECTRIC POWER
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