Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Surface passivation liquid and application of surface passivation liquid to CMT crystal surface passivation

A technology of crystal surface and passivation solution, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as complex oxidation process, achieve simple process, reduce surface leakage current, and achieve obvious effects

Active Publication Date: 2017-11-24
CHANGAN UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the defects and deficiencies in the prior art, the object of the present invention is to provide a surface passivation solution and its application for surface passivation of cadmium tellurium manganese crystal, the passivation process utilizing the passivation solution is simple and effective, especially It has the best passivation effect on the surface of CMT crystal, and solves the technical problem of introducing defects due to heat treatment in the traditional vulcanization process or the problem of complicated oxidation process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Surface passivation liquid and application of surface passivation liquid to CMT crystal surface passivation
  • Surface passivation liquid and application of surface passivation liquid to CMT crystal surface passivation
  • Surface passivation liquid and application of surface passivation liquid to CMT crystal surface passivation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Prepare the beaker of passivation solution clean with deionized water, be the ratio of 5:95 by the mass ratio of potassium persulfate and deionized water, take by weighing 5g potassium persulfate, pour in the beaker that 95g deionized water is housed, Stir magnetically at room temperature to dissolve all the potassium persulfate to obtain a passivation solution with a concentration of 5%. The CMT wafer (size 10×10×2mm) coated with gold electrodes on both sides by chemical method 3 ) into the passivation solution prepared above for surface passivation treatment, the time is 1min, 2min and 5min; the CMT wafer after passivation is taken out, put into deionized water and washed 3 times to remove various residues on the surface ions, and then the wafer was blown dry with nitrogen, and finally a surface-passivated CMT wafer was obtained.

Embodiment 2

[0030] Prepare the beaker of passivation solution and clean it with deionized water, be the ratio of 1:99 by the mass ratio of potassium persulfate and deionized water, take by weighing 1g potassium persulfate, pour in the beaker that 99g deionized water is housed, Stir magnetically at room temperature to dissolve all the potassium persulfate to obtain a passivation solution with a concentration of 1%. The CMT wafer (size 10×10×2mm) coated with gold electrodes on both sides by chemical method 3 ) into the passivation solution prepared above for surface passivation treatment, the time is 5min, 10min and 20min; the CMT wafer after passivation is taken out, put into deionized water and washed 3 times to remove various residues on the surface ions, and then the wafer was blown dry with nitrogen, and finally a surface-passivated CMT wafer was obtained.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to surface passivation liquid and application of the surface passivation liquid to surface passivation of CMT crystal. The mass percent content of the passivation liquid is 1%-5% potassium persulfate passivation liquid, namely a mass ratio of the potassium persulfate and de-ionized water is 1:99-5:95. When the passivation liquid is applied, a CMT crystal plate of which two surfaces are plated with gold electrodes through a chemical method is placed into the prepared passivation liquid for passivation for 1-20min, and then the CMT crystal plate is cleaned up by the de-ionized water and finally is dried through nitrogen, thereby obtaining the surface passivated CMT crystal. According to the surface passivation liquid and the application, the passivation technology and operation are simple, and the cost is low. After the CMT crystal is passivated, a high-resistance oxide layer can be formed on the surface of the CMT crystal and a leakage current is effectively reduced, so the performance of a detector is improved.

Description

technical field [0001] The invention belongs to the technical field of compound semiconductor material manufacturing, and relates to a surface passivation solution and its application for surface passivation of cadmium tellurium manganese crystals. The passivation solution can effectively reduce the leakage current on the surface of a detector and improve the performance of the detector. Background technique [0002] Cadmium manganese telluride (CMT) crystal has the advantages of high average atomic number, large band gap, high resistivity, and large carrier mobility lifetime product. The detector made of it has a large absorption coefficient, a high count rate, and a small volume. , easy to use and can work at room temperature, has become the focus of the development of nuclear radiation detector materials. The electronic band structure and semiconductor properties of CMT are very similar to those of cadmium zinc telluride, and they perform better in some aspects: such as M...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/321H01L21/322H01L31/032H01L31/115
CPCH01L21/321H01L21/322H01L31/032H01L31/115
Inventor 俞鹏飞李辉陈永仁宋婕王钰
Owner CHANGAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com