Manufacturing method of passivation structure, passivation structure and photovoltaic cell

Abstract

The invention discloses a manufacturing method of a passivation structure. The manufacturing method comprises the following steps: providing an N-type texturing silicon wafer; forming a tunneling oxide layer on the front side of the N-type texturing silicon wafer; forming an intrinsic polysilicon layer covering the tunneling oxide layer; performing boron doping on the target part of the intrinsicpolysilicon layer to obtain boron-doped polysilicon and removing the part of the intrinsic polysilicon layer apart from the target part; removing the part of the tunneling oxide layer apart from the part covered by the boron-doped polysilicon; and performing boron diffusion on the uncovered part of the N-type texturing silicon wafer so as to obtain a boron diffusion layer and obtain the passivation structure. The conversion efficiency of the photovoltaic cell can be improved. Meanwhile, the invention also provides the passivation structure applied to the TopCon solar cell and the photovoltaiccell, all of which have the above beneficial effects.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to a method for manufacturing a passivation structure, a passivation structure and a photovoltaic cell. Background technique [0002] With the increasing environmental problems, photovoltaic power generation technology has attracted more and more attention. Among them, crystalline silicon solar cells are photovoltaic cells with stable performance and the highest market share, and their technology update and development have attracted extensive attention of researchers. [0003] Existing N-type photovoltaic cells mainly have cell structures such as N-PERT, N-PERL, and TopCon. Under these structures, the recombination current of the boron diffusion layer on the front surface of the battery and the metal contact area on the front surface is very large, making the photovoltaic cell The conversion efficiency is reduced. [0004] Therefore, how to provide a solution to ...

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Problems solved by technology

[0003] Existing N-type photovoltaic cells mainly have cell structures such as N-PERT, N-PERL, and TopCon. Under these structures, the recombination current of the boron diffusion layer on the front surface of the battery and the metal contact area on the front surface is very large, making the photovoltaic cell Reduced conversion efficiency

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