Novel p-type crystalline silicon cell emitter contact passivation preparation process

A technology of crystalline silicon cells and preparation process, which is applied in the direction of sustainable manufacturing/processing, circuits, photovoltaic power generation, etc., can solve the problems such as bottlenecks in the improvement of conversion efficiency of PERC cells, and achieve reduction of recombination current, reduction of contact resistance, and improvement of conversion efficiency effect

Inactive Publication Date: 2020-12-11
SHANXI LUAN PHOTOVOLTAICS TECH
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Problems solved by technology

[0002] At present, the improvement of the conversion efficiency of single crystal PERC cells is mainly based on the optimization of the passivation film layer in the non-metallic region and the application of laser doping technology. When these technologies are mature, the improvement of the conversion efficiency of PERC cells will become a bottleneck

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  • Novel p-type crystalline silicon cell emitter contact passivation preparation process

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Embodiment Construction

[0009] The present invention proposes a novel crystalline silicon battery emitter contact passivation preparation process, such as figure 1 , by preparing a phosphorus re-doped layer on the emitter, not only reduces the contact resistance of the metal region, but also passivates the emitter. Concrete preparation process is as follows:

[0010] 1. Clean the velvet. Alkali texturing is used for texturing, the etching amount is controlled at 0.4-0.6g, and the reflectivity is 7%-12%.

[0011] 2. Diffusion knots.

[0012] 3. Remove PSG and back etch. Clean the edge and back part of BSG, use alkali etching, control the etching amount at 0.14-0.17g, and reflectivity 35%-45%.

[0013] 4. High temperature oxidation.

[0014] 5. Front anti-reflection film. A silicon nitride film with a refractive index of 2.03-2.10 and a film thickness of 75-80nm is prepared in tubular PECVD.

[0015] 6. Back passivation and anti-reflection coating.

[0016] 7. Front laser groove. Green light w...

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Abstract

The invention relates to the field of solar cell production, in particular to a novel p-type crystalline silicon cell emitter contact passivation preparation process which is carried out according tothe processes of cleaning texturing, diffusion junction making, PSG removal and back etching, high-temperature oxidation, front anti-reflection film removal, back passivation and anti-reflection filmremoval, front laser grooving, emitter heavy doping, PSG removal, back laser grooving and silk-screen printing. In the emitter heavy doping process, a thermal diffusion mode is adopted, 300 sccm of N2, 500-1,000 sccm of N2POCl3 and 400-900 sccm of O2 are introduced, the temperature is increased from 780 DEG C to 820 DEG C at a uniform speed, the time is 100-200 s, the temperature is maintained at820 DEG C, 13 slm of N2 is introduced, and the time is 1-2 min. By passivating the emitter, the composite current in the metallization area is reduced, and the conversion efficiency of the cell is improved by 0.3-0.5%.

Description

technical field [0001] The invention relates to the field of solar cell production, in particular to the field of preparation of p-type crystalline silicon cell emitters. Background technique [0002] At present, the improvement of the conversion efficiency of single crystal PERC cells is mainly based on the optimization of the passivation film layer in the non-metallic region and the application of laser doping technology. When these technologies are mature, the improvement of the conversion efficiency of PERC cells will become a bottleneck. Contents of the invention [0003] The technical problem to be solved by the present invention is: how to overcome the bottleneck in the improvement of PERC battery conversion efficiency and further improve the battery conversion efficiency. [0004] The technical problem to be solved by the present invention is: a new p-type crystalline silicon battery emitter contact passivation preparation process, according to cleaning texturing, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/068H01L31/0224
CPCH01L31/022425H01L31/068H01L31/1804H01L31/1868Y02E10/547Y02P70/50
Inventor 杨飞飞张波申开愉张云鹏李雪方郭丽吕爱武杜泽霖李陈阳
Owner SHANXI LUAN PHOTOVOLTAICS TECH
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