Novel p-type crystalline silicon cell emitter contact passivation preparation process

A technology of crystalline silicon cells and preparation process, which is applied in the direction of sustainable manufacturing/processing, circuits, photovoltaic power generation, etc., can solve the problems such as bottlenecks in the improvement of conversion efficiency of PERC cells, and achieve reduction of recombination current, reduction of contact resistance, and improvement of conversion efficiency effect
CN112071958AInactive Publication Date: 2020-12-11SHANXI LUAN PHOTOVOLTAICS TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHANXI LUAN PHOTOVOLTAICS TECH
Publication Date
2020-12-11
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to the field of solar cell production, in particular to a novel p-type crystalline silicon cell emitter contact passivation preparation process which is carried out according tothe processes of cleaning texturing, diffusion junction making, PSG removal and back etching, high-temperature oxidation, front anti-reflection film removal, back passivation and anti-reflection filmremoval, front laser grooving, emitter heavy doping, PSG removal, back laser grooving and silk-screen printing. In the emitter heavy doping process, a thermal diffusion mode is adopted, 300 sccm of N2, 500-1,000 sccm of N2POCl3 and 400-900 sccm of O2 are introduced, the temperature is increased from 780 DEG C to 820 DEG C at a uniform speed, the time is 100-200 s, the temperature is maintained at820 DEG C, 13 slm of N2 is introduced, and the time is 1-2 min. By passivating the emitter, the composite current in the metallization area is reduced, and the conversion efficiency of the cell is improved by 0.3-0.5%.
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Description

technical field

[0001] The invention relates to the field of solar cell production, in particular to the field of preparation of p-type crystalline silicon cell emitters. Background technique

[0002] At present, the improvement of the conversion efficiency of single crystal PERC cells is mainly based on the optimization of the passivation film layer in the non-metallic region and the application of laser doping technology. When these technologies are mature, the improvement of the conversion efficiency of PERC cells will become a bottleneck. Contents of the invention

[0003] The technical problem to be solved by the present invention is: how to overcome the bottleneck in the improvement of PERC battery conversion efficiency and further improve the battery conversion efficiency.

[0004] The technical problem to be solved by the present invention is: a new p-type crystalline silicon battery emitter contact passivation preparation process, according to cleaning texturing, ...

Claims

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