P+PIN silicon photoelectric probe

Abstract

This invention discloses a P+PIN silicon photoelectric detector including a N+ layer at the bottom, a non-doped intrinsic layer at the middle, a B diffusion area containing a P+type thick B diffusion layer at the top, in which, a N-type ohmic contact layer is set at the lower surface of the N+ layer, an insolation layer is set on the non-doped intrinsic layer, a P-type ohmic contact layer is set on the insulation layer contacted with the P+ type thick B diffusion layer, a window of incident light is formed on the insulation layer by etching, the B diffusion area is placed under the incident light window, the intrisic layer is placed between the N+ layer and the B diffusion region, which also includes a P type light B diffusion layer between the non-doped intrisic layer and the P+ type thick B diffusion layer thinner than the P type light B diffusion layer.

Description

technical field

[0001] The invention relates to a photodetector device, in particular to a P + PIN silicon photodetector. Background technique

[0002] Photodetection devices are used to convert optical signals into electrical signals, and such devices are widely used. Due to the characteristics of small size, low noise, fast response speed, and good spectral response performance, photodetectors have been developed rapidly in recent years and are widely used in optical reading of DVDs, CD-ROMs, etc., as well as in photoelectric detection systems and optical fiber communications. , and also widely used in the military.

[0003] Early photodetectors were represented by PN photodetectors, but due to the narrow depletion region of PN photodetectors, the absorption efficiency of light is low, so there are disadvantages such as slow response speed, large dark current, and low photoelectric conversion efficiency. In order to overcome the shortcomings of the PN photodetector, a n...

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