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Asymmetrical electrode two-dimensional material/graphene heterojunction cascaded photodetector and manufacturing method thereof

A technology of asymmetric electrodes and photodetectors, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems that two-dimensional material detectors cannot meet the requirements, the carrier mobility is small, and the light absorption efficiency is low. Effects of reduced device size, fast response time, and increased photoresponse

Inactive Publication Date: 2016-07-20
ZHOUKOU NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this kind of detector has the disadvantages of small carrier mobility and low light absorption efficiency, which greatly limits its application in photodetection and other aspects.
It can be seen that a single two-dimensional material detector is still unable to meet the increasing needs of people.

Method used

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  • Asymmetrical electrode two-dimensional material/graphene heterojunction cascaded photodetector and manufacturing method thereof
  • Asymmetrical electrode two-dimensional material/graphene heterojunction cascaded photodetector and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] S11. Growth of single-layer graphene and MoS by CVD 2 and other two-dimensional materials.

[0031] S12, by thermal evaporation on Si / SiO 2 A 40 nm thick Au electrode (first electrode) was prepared on the surface.

[0032] S13. After doping the obtained graphene and the two-dimensional material to different degrees, use PMMA to transfer the graphene and the two-dimensional material to the metal electrode (the surface of the first electrode), respectively, to obtain the two-dimensional material / graphene / two-dimensional material double heterojunction;

[0033] S14. Patterning the obtained two-dimensional material / graphene / two-dimensional material double heterojunction by photolithography;

[0034] S15. Evaporate 20nm Ag on the two-dimensional material / graphene / two-dimensional material double heterojunction by thermal evaporation as the second electrode to obtain a two-dimensional material / graphene / two-dimensional material double heterojunction photodetector.

Embodiment 2

[0036] S21. Growth of single-layer graphene and MoS by CVD 2 and other two-dimensional materials.

[0037] S22, by thermal evaporation on Si / SiO 2 A 40 nm thick Au electrode (first electrode) was prepared on the surface.

[0038] S23. After doping the obtained graphene and the two-dimensional material to different degrees, use PMMA to transfer the graphene and the two-dimensional material to the metal electrode (the surface of the first electrode), respectively, to obtain graphene / two-dimensional material / graphene / Two-dimensional materials / graphene four heterojunctions;

[0039] S24. Patterning the obtained graphene / two-dimensional material / graphene / two-dimensional material / graphene four heterojunctions by photolithography;

[0040] S25. Use thermal evaporation to evaporate 20nm Ag on the double heterojunction of two-dimensional material / graphene / two-dimensional material as the second electrode, and obtain four heterojunctions of graphene / two-dimensional material / graphene / ...

Embodiment 3

[0042] S31. Growth of single-layer graphene and MoS by CVD 2 and other two-dimensional materials.

[0043] S32, by thermal evaporation on Si / SiO 2 A 40 nm thick Au electrode (first electrode) was prepared on the surface.

[0044] S33. After doping the obtained graphene and the two-dimensional material to different degrees, transfer the graphene and the two-dimensional material to the metal electrode (the surface of the first electrode) respectively using PMMA to obtain the graphene / two-dimensional material 1 (MoS 2 ) / graphene / two-dimensional materials 2 (WS 2 ) / graphene and other two-dimensional materials combined with graphene to form a heterojunction;

[0045] S34, the obtained graphene / two-dimensional material 1 (MoS 2 ) / graphene / two-dimensional materials 2 (WS 2 ) / graphene and other two-dimensional materials combined with graphene to form a heterojunction for patterning;

[0046]S35. Using thermal evaporation to vapor-deposit 20nmAg on the double heterojunction of tw...

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Abstract

The invention discloses an asymmetrical electrode two-dimensional material / graphene heterojunction cascaded photodetector and a manufacturing method thereof. The detector comprises a Si / SiO2 substrate, a first electrode is arranged on the Si / SiO2 substrate, a two-dimensional material layer is arranged on the first electrode, a second electrode is arranged on the two-dimensional material layer, and the two-dimensional material layer is an n-layer heterojunction formed by graphene and two-dimensional material which are overlapped. The asymmetrical electrodes with different work functions are adopted, formation of a Fermi energy level difference from the first electrode to the second electrode is promoted, photocarriers are generated and then quickly diffused to an external circuit, quick combination of an electron hole can be avoided due to existence of the energy level difference, and the photo response of the device can be enhanced; and as the graphene and the two-dimensional material are combined, the high carrier mobility and the super quick response time of the graphene, and the high absorption rate towards light by the two-dimensional material are used respectively, and a super quick and super high-response photodetector can be realized.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to an asymmetric electrode two-dimensional material / graphene heterojunction cascaded photodetector and a preparation method thereof. Background technique [0002] A photodetector is a device that generates electrical signals when light is irradiated on the surface of a device. It has a wide range of applications in the fields of electronics, military, and biosensing. With the development of science and technology and the improvement of living standards, the requirements for the quality of detectors are gradually increasing, and the important parameters to measure the quality of photodetectors are light absorption band, light responsivity and light response time. Traditional photodetectors based on III-V semiconductors are limited in terms of absorption bandwidth and response time due to their semiconductor characteristics. In addition, with the continuous improvement of dev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/109H01L31/18H01L31/0224
CPCH01L31/022408H01L31/109H01L31/18Y02P70/50
Inventor 杨志广李志伟武文彭鹏王筠丁永杰
Owner ZHOUKOU NORMAL UNIV
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