Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Organic photoelectric detector and preparation method thereof

A photodetector, organic technology, applied in photovoltaic power generation, electro-solid device, semiconductor/solid-state device manufacturing, etc., can solve the problems of low external quantum efficiency and weak photomultiplier effect, and achieve the improvement of specific detection rate and photo-generated current. , the effect of simple process

Active Publication Date: 2019-05-31
XIAN UNIV OF TECH
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Existing organic photodetectors have low external quantum efficiencies, resulting in weak photomultiplication effects

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Organic photoelectric detector and preparation method thereof
  • Organic photoelectric detector and preparation method thereof
  • Organic photoelectric detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0041] A method for preparing an organic photodetector, comprising the steps of:

[0042] Step 1. First coat the ITO electrode layer 2 on the glass substrate 1, and then clean the glass substrate 1. First, use deionized water to ultrasonically clean the glass substrate 1 for 15 minutes to 20 minutes, and then use acetone to clean the glass substrate 1. 2 Perform ultrasonic cleaning for 15-20 minutes, and finally use anhydrous ethanol to ultrasonically clean for 15-20 minutes, then blow dry with pure nitrogen or infrared oven.

[0043] Step 2, after the glass substrate 1 treated in step 1 is cleaned with ultraviolet ozone light, it is placed in a nitrogen glove box, and the mixture of PEDOT and PSS is spin-coated on the surface of the ITO electrode layer 2 by a glue homogenizer; spin coating After completion, the glass substrate 1 is annealed to form an anode buffer layer 3 with a thickness of 30 nm to 50 nm;

[0044] The spin-coating rate is 3000rpm-3500rpm, the spin-coating ...

Embodiment 1

[0051] Step 1. First coat the ITO electrode layer 2 on the glass substrate 1, and then clean the glass substrate 1. First, use deionized water to ultrasonically clean the glass substrate 1 for 15 minutes, and then use acetone to clean the glass substrate 2. Ultrasonic cleaning for 15min, and finally ultrasonic cleaning with absolute ethanol for 15min, and then drying with pure nitrogen or infrared drying.

[0052] Step 2, after the glass substrate 1 treated in step 1 is cleaned with ultraviolet ozone light, it is placed in a nitrogen glove box, and the mixture of PEDOT and PSS is spin-coated on the surface of the ITO electrode layer 2 by a glue homogenizer; spin coating After completion, the glass substrate 1 is annealed to form an anode buffer layer 3 with a thickness of 45 nm;

[0053] The spin-coating rate is 3000rpm, and the spin-coating time is 60s; the annealing temperature is 120°C, and the annealing time is 15min.

[0054] Step 3, first connect P3HT, PC 61 BM, C 60 ...

Embodiment 2

[0059] Step 1. First coat the ITO electrode layer 2 on the glass substrate 1, and then clean the glass substrate 1. First, use deionized water to ultrasonically clean the glass substrate 1 for 15 minutes, and then use acetone to clean the glass substrate 2. Ultrasonic cleaning for 15 minutes, and finally using anhydrous ethanol ultrasonic cleaning for 15 minutes, and then drying with pure nitrogen or infrared drying.

[0060] Step 2, after the glass substrate 1 treated in step 1 is cleaned with ultraviolet ozone light, it is placed in a nitrogen glove box, and the mixture of PEDOT and PSS is spin-coated on the surface of the ITO electrode layer 2 by a glue homogenizer; spin coating After completion, the glass substrate 1 is annealed to form an anode buffer layer 3 with a thickness of 40 nm;

[0061] The spin-coating rate is 3200rpm, and the spin-coating time is 60s; the annealing temperature is 120°C, and the annealing time is 15min.

[0062] Step 3, first connect P3HT, PC 6...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an organic photoelectric detector and a preparation method thereof. The organic photoelectric detector comprises a glass substrate, the surface of the glass substrate is platedwith an ITO electrode layer, and the ITO electrode layer is coated with an anode buffer layer, an active layer, a cathode buffer layer and an Al electrode layer successively from bottom to top; and material of the active layer includes a mixture of P3HT, PC61BM, C60 and C70. The active layer is doped with C60 and C70 acceptor materials to serve as electron traps, the number of traps is increased,aggregation of the trap material is reduced, tunneling injection of the cavity is increased, and the external quantum efficiency can be improved.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection devices, and relates to an organic photodetector and a preparation method thereof. Background technique [0002] In various practical applications, highly sensitive photodetectors capable of detecting and receiving weak light signals are particularly important. There are two ways to improve the sensitivity of photodetectors, one is to increase the external quantum efficiency, and the other is to reduce the dark current density. Using the photomultiplication effect to improve the external quantum efficiency is an important way to realize high-sensitivity photodetection. The photomultiplier effect in inorganic semiconductors is generated by impact ionization, making the photomultiplier devices very noisy, which greatly limits their practical applications. Organic photodetectors have some incomparable advantages over inorganic photodetectors, for example, they can be processed on fl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/46H01L51/42H01L51/44H01L51/48
CPCY02E10/549
Inventor 安涛刘欣颖
Owner XIAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com