Quaternary broad-spectrum high-specific-detectivity organic photoelectric detector and preparation method thereof

Abstract

The invention discloses a quaternary broad-spectrum high-specific-detectivity organic photoelectric detector. The detector comprises a glass substrate, wherein one surface of the glass substrate is plated with an ITO electrode layer, and the surface of the ITO electrode layer is coated with an anode buffer layer, an active layer, a cathode buffer layer and an Al electrode layer sequentially from bottom to top. The invention furthermore discloses a preparation method of the quaternary broad-spectrum high-specific-detectivity organic photoelectric detector. According to the quaternary broad-spectrum high-specific-detectivity organic photoelectric detector sss, the active layer is of a quaternary heterojunction structure, four types of photosensitive materials with different absorption spectra are selected, the principle of absorption spectrum complementation is utilized, and therefore the spectrum response range of the organic photoelectric detector is expanded.

Description

technical field [0001] The invention belongs to the technical field of organic photoelectric detection devices, and relates to a quaternary wide-spectrum high-ratio detection rate organic photodetector, and the invention also relates to a preparation method of the organic photoelectric detector. Background technique [0002] Photodetectors are devices that convert optical signals into electrical signals, and are widely used in various fields of military and national economy. At present, commercial optoelectronic devices mainly use inorganic materials, but their high production cost and complicated processing technology are not conducive to large-scale production. In contrast, organic semiconductor materials have the advantages of excellent processing performance, low cost, and large-area fabrication, but have low electron mobility, poor stability, and limited ability to detect light of a certain wavelength. [0003] At present, most of the active layers of photoelectric con...

AI Technical Summary

Problems solved by technology

At present, commercial optoelectronic devices mainly use inorganic materials, but their high production cost and complicated processing technology are not conducive to large-scale production.

In contrast, organic semiconductor materials have the advantages of excellent processing performance, low cost, and large-area fabrication, but have low electron mobility, poor stability, and limited ability to detect light of a certain wavelength.

[0003] At present, most of the active layers of photoelectric conversion devices such as organic photodetectors and organic solar cells have a narrow spectral response range, and some organic photodetectors with a wide response range have complex structures, high manufacturing process requirements, and poor photoelectric characteristics.

The core problem is that organic photodetectors have many problems such as incomplete response of three primary colors, low detectivity and linear dynamic range.

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