51results about How to "Fast light response" patented technology

The invention relates to a PIN structural TiO2 base ultraviolet light detector for ultraviolet light detector and its manufacturing method. The ultraviolet light detector comprises a conductive substrate, a N-type semiconductor contact layer, an intrinsic TiO2 active layer and a P-type wide-band-gap semiconductor contact layer. The manufacturing method of the ultraviolet light detector comprises the following step: preparing the N-type semiconductor contact layer on the conductive substrate after pretreatment; preparing the intrinsic TiO2 active layer on the N-type semiconductor contact layer; carrying out a partial etching to the around part of the active layer by using a dry etching technology; preparing the P-type contact layer on the etching part of the active layer; preparing a P-type ohmic electrode on the P-type contact layer; and preparing a N-type ohmic electrode on the conductive substrate. The invention has a plurality of advantages such as high external quantum efficiency and sensitivity, rapid response speed, small dark current, small and exquisite volume, cheap cost, and long service life. The film preparation technology is convenient and maturate. The interference of light sources except the ultraviolet ligh may be prevented.

The invention discloses a single-photon detector based on the superconducting thin film material, which comprises an optical path system, a superconducting device and an electric system. The optical path system is used for coupling, transmitting and regulating incident optical signals; the superconducting device is used for detecting incident photon signals in the environment of low temperature; the electric system is used for reading, processing and analyzing electric signals. The invention also discloses a manufacturing method of the superconducting device of the single-photon detector. The method comprises the following steps: the growth of the superconducting thin film; the graphic design and micro processing of the superconducting device. The single-photon detector has the advantages of high sensitivity, low dark counting, high repeating speed, and so on, and has important prospects of application in a plurality of fields.

The invention discloses a black phosphorus/molybdenum disulfide heterojunction-based photodetector, belongs to the technical field of photodetection and aims at solving the problems that a device does not have wide-spectrum, fast and low-noise response characteristics, does not have the compatibility with a CMOS process and is small in volume, easy to integrate and adjustable in response spectrum range. The black phosphorus/molybdenum disulfide heterojunction-based photodetector comprises a silicon dioxide substrate layer, wherein a molybdenum disulfide layer is arranged on the silicon dioxide substrate layer; a black phosphorus conductive layer covers the upper surface of the molybdenum disulfide layer; the black phosphorus conductive layer and the molybdenum disulfide layer form a heterojunctio structure; and a first electrode layer and a second electrode layer are arranged on the black phosphorus conductive layer. The black phosphorus/molybdenum disulfide heterojunction-based photodetector is used for achieving a wide-spectrum and ultrafast-response photodetector.

The invention discloses a nano coaxial-cable heterojunction array base ultraviolet detector and a manufacturing method thereof. The detector comprises a substrate and a conductive film, a NiO@TiO2 nano coaxial-cable heterojunction array which is used as an ultraviolet absorbing layer and at least one N-type ohmic electrode are arranged on the conductive film, at least one P-type ohmic electrode is arranged on the NiO@TiO2 nano coaxial-cable heterojunction array; and the NiO@TiO2 nano coaxial-cable heterojunction array is composed of a TiO2 nano-tube array and a NiO nano-wire filled in the TiO2 nano-tube. The core structure of the detector provided by the invention is the nano coaxial-cable heterojunction array consisting of the TiO2 nano-tube array and the NiO nano-wire penetrating through the TiO2 nano-tube; the usage rate of a photo-generated carrier can be sufficiently improved, and the nano coaxial-cable heterojunction array base ultraviolet detector has the advantages of high external quantum efficiency and flexibility, small volume and the like.

The invention discloses two-dimensional superlattice indium selenide and preparation method and application thereof in fabrication of a photoelectric detector, and belongs to the field of a high-performance photoelectric detector. The fabrication method of the two-dimensional superlattice indium selenide comprises the steps of pre-processing a SiO2/Si substrate; transferring onto the SiO2/Si substrate after an InSe material is pasted with transparent glue, and immersing in acetone; and performing high-temperature processing under a vacuum condition, thereby obtaining a two-dimensional superlattice InSe nanosheet on a surface of the SiO2/Si substrate. The two-dimensional superlattice InSe prepared by the invention has the advantages of high electrical transmission performance, high light response, favorable stability and rapid light response speed and has a good application prospect in the field of the high-performance photoelectric detector.

The invention discloses a photosensitive solder resist material with short exposure time. The photosensitive solder resist material comprises the following components in parts by weight: 35-40 parts of photosensitive resin, 5-10 parts of polyurethane acrylate, 5-10 parts of acrylic acid monomers, 4-8 parts of epoxy resin, 1-4 parts of a pigment, 25-35 parts of a filler, 5-10 parts of a photoinitiator, 1-5 parts of an auxiliary agent and 3-8 parts of a solvent. Photosensitive resin is obtained by carrying out a polymerization reaction on acrylic acid and o-cresol formaldehyde epoxy resin, and then sequentially reacting a reaction product with anhydride and glycidyl methacrylate. The exposure time of the prepared photosensitive solder resist material is short, and is only 5-10 seconds, and the exposure time of traditional ink is generally about 20-25 seconds, so that the exposure time is shortened by 1-5 times compared with the traditional exposure time; the photosensitive solder resistmaterial also has the advantages of high temperature resistance, acid and alkali resistance, heat and oil resistance, high adhesive force and high hardness; and a solder resist mask obtained by coating has excellent insulativity and high temperature resistance.

The invention discloses a photoresponsive polymer gel factor, a photoresponsive gel and a preparation method of the photoresponsive gel. The photoresponsive polymer gel factor comprises a plurality ofphotoresponsive liquid crystal repeat units, wherein each photoresponsive liquid crystal repeat unit comprises azobenzene and derivative groups thereof, flexible chains and connecting groups. As theazobenzene and the derivative groups thereof are introduced into the main chain of a liquid crystal polymer gel factor, a three-dimensional network is formed through long alkyl chain accumulation, hydrogen bonding of the connecting groups and interactions of pi-pi, and the formed polymer gel has the characteristic of dual photothermal response; and the problems that a conventional azobenzene photoresponsive gel is slow in response speed and poor in mechanical property can be effectively solved, and in addition, the preparation method is simple.

The invention discloses a spirooxazine photochromic compound changing from colorless to blue as well as a preparation method and application of the spirooxazine photochromic compound, and belongs to the technical field of organic functional materials. The objective of the invention is to develop and meet aesthetic needs of customers. The invention discloses a photochromic compound with high outdoor stability and a formula of a coating thereof. The spirooxazine photochromic compound changing from colorless to blue prepared by the invention has the advantages of high photoresponse speed, high fading speed, stable performance in a closed-loop state in outdoor use, low-price and easily available synthetic raw materials and high operability of a synthetic process, and meets the market aestheticrequirements.

A non-contact-type ice hockey shooting training device based on a gravity sensor relates to training equipment, achieves light reaction exercise in specialized ice hockey training, and comprises an ice hockey stick, a goal, an electric control unit, an image projection system, a signal projector and the gravity sensor; a curtain is mounted in the goal; a sensing signal input end of the electric control unit is connected with a sensing signal output end of the signal projector; a projected image data signal output end of the electric control unit is connected with a projected image data signal input end of an image data processing device; and a drop point image data signal input end of the electric control unit is connected with a drop point image data signal input end of the image data processing device. Athletes respond according to luminous target points to carry out light reaction exercise and the choice reaction exercise. The response speed of athletes playing ice hockey can be improved through exercising the light reaction.

The invention discloses a method of generating hot steam in an all-weather manner by nearly totally absorbing sunlight by a coupled gain localized surface plasma resonance absorbent. The coupled gainlocalized surface plasma resonance absorbent is formed as a photothermal conversion substrate by means of a nano composite structure material which is good in structure and shape regulation and control, excellent in light absorption characteristic, simple in preparation process, short in preparation period, high in stability, low in cost and capable of absorbing sunlight nearly totally by ultrawide absorption of a single absorbent. Sunlight is focused directly to irradiate a dispersion solution of the absorbent, so that low energy density sunlight can be captured to prepare photothermal steam.The method is strong in weather resistance, captures sunlight all the daytime, and generates high-temperature, rapid and efficient photothermal steam and is excellent in average daily comprehensive photothermal performance. The problem that the efficiency is suddenly reduced as the photothermal conversion efficiency is reduced along with energy density of incident light is solved, and the problemthat it is hard to generate the high temperature, rapid and efficient photothermal steam at the same time and capture the sunlight with low energy density is solved.

The invention provides an MgGa2O4 ultraviolet detector and a preparation method thereof. The method comprises steps S1, taking an organic magnesium compound as a magnesium source, an organic gallium compound as a gallium source, taking high-purity oxygen as an oxygen source, and growing an MgGa2O4 film on a surface of a substrate through employing a metal organic compound chemical vapor depositionmethod; S2, forming an interdigital electrode mask on the MgGa2O4 film by using negative photoresist photoetching, and removing the interdigital electrode mask after metal sputtering of the interdigital electrode mask to form an interdigital electrode; and S3, pressing In particles on the interdigital electrode to obtain the MgGa2O4 ultraviolet detector with the MSM structure. Compared with the prior art, the MgGa2O4 film is prepared by using a metal organic compound chemical vapor deposition method, by increasing the oxygen flow, increasing the oxygen partial pressure and reducing the oxygendefect, the prepared MgGa2O4 film has characteristics of high crystallization quality, no phase splitting, steep absorption cut-off edge and the like, so the ultraviolet detector containing the MgGa2O4 film has lower dark current and higher photoresponse speed.

The invention provides a ZnMgO ultraviolet detector and a preparation method thereof, and the method comprises the steps: S1, taking an organic zinc compound as a zinc source, taking an organic magnesium compound as a magnesium source, taking high-purity oxygen as an oxygen source, and growing a ZnMgO film on the surface of a substrate by adopting a metal organic compound chemical vapor depositionmethod; S2, forming an interdigital electrode mask on the ZnMgO film by using negative photoresist photoetching, and removing the interdigital electrode mask after sputtering metal on the interdigital electrode mask to form an interdigital electrode; and S3, pressing In particles on the interdigital electrode to obtain the ZnMgO ultraviolet detector with the MSM structure. Compared with the priorart, the oxygen flow is increased, the oxygen partial pressure is increased, and oxygen defects are reduced; the prepared ZnMgO film has the characteristics of high crystallization quality, no phasesplitting, steep absorption cut-off edge and the like, and the ZnMgO film 2 with the mixed-phase structure can simultaneously meet high responsivity and low dark current, so that the ZnMgO ultravioletphotoelectric detector has lower dark current and higher photoresponse speed.

A contact-type ice hockey shooting training device based on a gravity sensor relates to training equipment, and achieves light reaction exercise in specialized ice hockey training. A goal baffle is mounted at the rear part of a goal outline border; a simulated goalkeeper is mounted on a guiding element on a goalkeeper control line in the front of a goal; the edge of a bottom layer is fixedly connected with the edge of a light-transmitting surface layer so as to form a hollow bag; a luminous body fixed layer and an elastic layer are both positioned in the hollow bag; the gravity sensor and a signal projector are mounted on an ice hockey stick; control signal input ends of LED luminous points are connected with a luminous signal output end of a luminous body driving circuit; a luminous signal input end of the luminous body driving circuit is connected with a luminous control signal output end of a control circuit; a control signal input end of the guiding element is connected with a guiding signal output end of a guiding element driving circuit; and a guiding control signal input end of the guiding element driving circuit is connected with a guiding control signal output end of the control circuit. Through the use of the training device, the light reaction of athletes is exercised through making the goal baffle to be luminous.

The invention relates to a class-II superlattice infrared detector with a broadband absorption enhancement structure and a preparation method thereof, and belongs to the technical field of semiconductor infrared detectors. The detector comprises the following structures: a substrate layer; the heavily doped reflecting layer extends on the substrate layer; the buffer layer is epitaxially arranged on the heavily doped reflecting layer; the electrode I type superlattice layer and the electrode II type superlattice layer are arranged on the buffer layer; the electrode II and the asymmetric microstructure array layer are arranged on the type-II superlattice layer in a manner that the electrode II surrounds the asymmetric microstructure array layer; and the graphene layer covers the electrode II and the asymmetric microstructure array layer. An asymmetric plasma structure is constructed through a heavily doped reflecting layer, an intermediate class-II superlattice layer and an asymmetric microstructure array layer with a specific structure on the class-II superlattice layer, so that the light response speed, the specific detection rate and the absorptivity of the infrared detector are improved, and the dark current of the infrared detector is reduced. The detector has a broadband absorption enhancement function, is short in manufacturing period and low in cost, and is suitable for expanded production.

The invention discloses a tunnel compensating superlattice infrared detector, and belongs to the field of semiconductor optoelectronics. The original tunnel compensating multi-active region infrared detector improves the defects that the conventional multiquantum well or superlattice structured infrared detector has small photocurrent and large dark current, yet the original tunnel compensating multi-active region infrared detector is relatively large in production difficulty and low in yield. A lower contact layer is grown on a substrate, then one or more basic units are grown, an upper contact layer is grown, and a table surface and electrodes are produced, wherein the basic units are sequentially a blocking barrier, a superlattice infrared absorption region, a heavily doped N-type region and a heavily doped P-type region; the tunnel compensating superlattice infrared detector is characterized in that a superlattice structure is used as an infrared absorption region of the detector,so that control requirements on epitaxial structural parameters are reduced; the heavily doped N-type region and the heavily doped P-type region form a tunnel junction for providing tunnel compensating current for the superlattice; the blocking barrier has the thickness of 30-50nm so as to reduce the dark current of a device. The tunnel compensating superlattice infrared detector has the advantages of large photocurrent, low dark current, fast response and the like of the tunnel compensating multi-active region infrared detector.

The invention relates to the use of gene therapy vectors to improve vision by introducing into healthy rod photoreceptor cells of a patient suffering from cone photoreceptor dysfunction and/or degeneration a nucleic acid encoding a gene product that is light-sensitive and/or that modulates endogenous light-sensitive signaling in a photoreceptor cell, such that the range of light intensities to which the rod photoreceptor responds is extended and/or the speed at which the rod photoreceptor responds to light is increased.