Method for preparation of a-b orientated ZnO nanometer linear array

A nanowire array and orientation technology is applied in the field of preparation of ZnO nanowire arrays to achieve the effects of excellent ultraviolet light sensitivity, fast light response speed and high deposition rate
CN100428502CInactive Publication Date: 2008-10-22UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Patents(China)
Current Assignee / Owner
UNIV OF ELECTRONICS SCI & TECH OF CHINA
Publication Date
2008-10-22
Estimated Expiration
Not applicable ยท inactive patent

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Abstract

The invention provides a method for preparing ZnO nano line array in a-b orientation which belongs to electronic material technical field, relates to wide bond gap semiconductor ZnO luminescent material, especially relates to a method for preparing ZnO nano line array. The invention uses chemical vapor deposition technique, and employs pure ZnO powder as evaporation source and sapphire Al2O3 (1120) as substrate, and controls the temperature of the evaporation source to be no less than the thermal decomposition temperature of the ZnO powder and the temperature of the substrate to be no less than 750 DEG C. and vacuum degree at 200 to 300 torr, and employs Ar gas as transmission gas with gas flow rate of 35 sccm. In this manner, the ZnO powder is heated to decompose into Zn and O, and then by Ar gas transmission, the ZnO nano line array in a-b orientation is deposited on the substrate. The invention employs current chemical vapor deposition technique, and can easily prepare the ZnO nano line array in a-b orientation which has excellent uv sensitive character and quick light response speed.
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Description

technical field

[0001] The invention belongs to the technical field of electronic materials, relates to a wide band gap semiconductor ZnO light-emitting material, and particularly relates to a preparation method of a ZnO nanowire array. technical background

[0002] In recent years, ZnO has become another research hotspot after GaN materials due to its large exciton binding energy (60 mev), which can obtain high-efficiency ultraviolet light emission at room temperature. Among them, the ZnO nanowire array system is expected to be used as the next generation of nano-optical devices. The first attention is that highly oriented ZnO nanowire arrays act as natural laser resonators, which can generate ultraviolet laser when excited, and ZnO nanowires have an extremely low photoexcitation threshold of 40 kW / cm 2 (Film material is 300kW / cm 2 ~4MW / cm 2 ), chemical activity and one-dimensional nanostructure, making ZnO nanowires one of the ideal materials for making ultraviolet nano...

Claims

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