Nano coaxial-cable heterojunction array base ultraviolet detector and manufacturing method thereof

Abstract

The invention discloses a nano coaxial-cable heterojunction array base ultraviolet detector and a manufacturing method thereof. The detector comprises a substrate and a conductive film, a NiO@TiO2 nano coaxial-cable heterojunction array which is used as an ultraviolet absorbing layer and at least one N-type ohmic electrode are arranged on the conductive film, at least one P-type ohmic electrode is arranged on the NiO@TiO2 nano coaxial-cable heterojunction array; and the NiO@TiO2 nano coaxial-cable heterojunction array is composed of a TiO2 nano-tube array and a NiO nano-wire filled in the TiO2 nano-tube. The core structure of the detector provided by the invention is the nano coaxial-cable heterojunction array consisting of the TiO2 nano-tube array and the NiO nano-wire penetrating through the TiO2 nano-tube; the usage rate of a photo-generated carrier can be sufficiently improved, and the nano coaxial-cable heterojunction array base ultraviolet detector has the advantages of high external quantum efficiency and flexibility, small volume and the like.

Description

technical field [0001] The invention relates to an ultraviolet light detector technology, in particular to a nano-coaxial cable heterojunction array-based ultraviolet light detector for ultraviolet light detection and a preparation method thereof. Background technique [0002] Ultraviolet light detectors have been widely used in military and civilian fields because of their strong anti-interference ability and other advantages. Because traditional single crystal Si-based semiconductor materials have no selective absorption for ultraviolet light, expensive filters must be used, resulting in high production costs for single crystal Si-based ultraviolet detectors, which are difficult to meet the needs of the civilian market. Therefore, at present, people mainly focus on junction devices made of wide bandgap semiconductor materials, such as (Al)GaN, SiC, ZnO, diamond junction devices, etc., and the corresponding research is also mainly concentrated on single crystal devices. Du...

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Problems solved by technology

[0005] 1. The heterojunction structure of traditional polycrystalline thin film junction devices is similar to that of single crystal junction devices, and the heterojunction interfaces are common planar contacts. Therefore, the area of ​​the space charge region distributed near the contact surface is small, which is harmful to light generation. Limited separation of electron-hole pairs;

[0006] 2. The excessively high grain boundary and defect density in the polycrystalline film seriously hinder the diffusion of photogenerated electrons to the conductive substrate or metal electrode, so that a large number of photogenerated electron-hole pairs are lost due to recombination before they diffuse to the electrode. Lose;

[0007] 3. A large number of defects in the polycrystalline film serve as the recombination center of photogenerated electron-hole pairs, which also seriously reduces the lifetime of photogenerated carriers.

Therefore, the filling rate of the colloidal particles is low and the structure is not dense enough

Although the use of double-pass porous alumina can ensure the fluidity in the pores and make it easier for the colloidal particles to migrate to the bottom, it cannot achieve the deposition of two-way heterostructures, that is, the deposition of TiO on one side cannot be guaranteed. 2 nanowires while depositing NiO nanowires on the other side

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