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ZnMgO ultraviolet detector and preparation method thereof

A UV detector and thin-film technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor device manufacturing, final product manufacturing, etc., can solve the problems of large dark current of UV detectors, low crystal quality, fast light response speed, etc. Phase separation, high crystal quality, and reduced oxygen defects

Inactive Publication Date: 2020-10-16
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Description
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  • Application Information

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Problems solved by technology

[0005] In order to solve the problems that the crystal quality of the ZnMgO thin film prepared by pulsed laser deposition and radio frequency magnetron sputtering is not high, and there are many defect states, which lead to a large dark current and low photoresponsivity of the ultraviolet detector, the present invention proposes a ZnMgO ultraviolet detector Device and its preparation method, the ZnMgO ultraviolet detector is based on mixed-phase ZnMgO thin film, has lower dark current and faster photoresponse speed

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  • ZnMgO ultraviolet detector and preparation method thereof
  • ZnMgO ultraviolet detector and preparation method thereof
  • ZnMgO ultraviolet detector and preparation method thereof

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preparation example Construction

[0052] The preparation method of ZnMgO thin film 2 is: utilize metal organic compound chemical vapor deposition (MOCVD) equipment, with organozinc compound as zinc source, organomagnesium compound as magnesium source, in excess oxygen atmosphere, heating substrate to certain temperature, on the substrate ZnMgO thin films with hexagonal phase and cubic phase mixed phase structure were grown on the substrate.

[0053] The preparation method of the interdigitated electrode 3 is as follows: use negative photolithography to form an interdigitated electrode mask on the ZnMgO film, use a small coating machine to sputter metal on the interdigitated electrode mask, and then remove the interdigitated electrode mask by means of ultrasound or the like. film, forming interdigitated electrodes.

[0054] The above content has described in detail the structure of the ZnMgO ultraviolet detector provided by the present invention. Corresponding to the above-mentioned ZnMgO ultraviolet detector, t...

Embodiment 1

[0076] Put the cleaned sapphire substrate into the growth chamber of the MOCVD equipment, adjust the growth temperature to 800°C, and the pressure to 4000Pa. Use dimethyl zinc as the zinc source, dimethylmagnesocene as the magnesium source, the carrier gas flow rate of the zinc source is 10 sccm, the carrier gas flow rate of the magnesium source is 5 sccm, and the flow rate of high-purity oxygen is 500 sccm, which is much larger than the zinc source, The flow rate of the magnesium source was used to grow for 1 hour, the organic source and oxygen were turned off, and the substrate temperature was lowered to room temperature at 0.6°C / s to obtain a ZnMgO thin film.

[0077] Move the ZnMgO film into the annealing furnace, use an oxygen atmosphere, the oxygen flow rate is 12sccm, and raise the temperature of the annealing furnace to 700°C at a heating rate of 0.4°C / s. After the temperature is kept constant for 30min, the ZnMgO film is taken out from the annealing furnace.

[0078] ...

Embodiment 2

[0085] Put the cleaned sapphire substrate into the growth chamber of the MOCVD equipment, adjust the growth temperature to 500°C, and the pressure to 3000Pa. Use triethylzinc as the zinc source, dimethylmagnesocene as the magnesium source, the carrier gas flow rate of the zinc source is 40sccm, the carrier gas flow rate of the magnesium source is 20sccm, and the flow rate of high-purity oxygen is 500sccm, far greater than the zinc source, The flow rate of the magnesium source was used to grow for 1.2h, the organic source and oxygen were turned off, and the substrate temperature was lowered to room temperature at 0.4°C / s to obtain a ZnMgO thin film.

[0086] Move the ZnMgO film into the annealing furnace, use an oxygen atmosphere, and the oxygen flow rate is 12 sccm, raise the furnace temperature of the annealing furnace to 550 ° C at a heating rate of 0.2 ° C / s, and keep the temperature for 60 minutes, then take out the ZnMgO film from the annealing furnace.

[0087] On the ...

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Abstract

The invention provides a ZnMgO ultraviolet detector and a preparation method thereof, and the method comprises the steps: S1, taking an organic zinc compound as a zinc source, taking an organic magnesium compound as a magnesium source, taking high-purity oxygen as an oxygen source, and growing a ZnMgO film on the surface of a substrate by adopting a metal organic compound chemical vapor depositionmethod; S2, forming an interdigital electrode mask on the ZnMgO film by using negative photoresist photoetching, and removing the interdigital electrode mask after sputtering metal on the interdigital electrode mask to form an interdigital electrode; and S3, pressing In particles on the interdigital electrode to obtain the ZnMgO ultraviolet detector with the MSM structure. Compared with the priorart, the oxygen flow is increased, the oxygen partial pressure is increased, and oxygen defects are reduced; the prepared ZnMgO film has the characteristics of high crystallization quality, no phasesplitting, steep absorption cut-off edge and the like, and the ZnMgO film 2 with the mixed-phase structure can simultaneously meet high responsivity and low dark current, so that the ZnMgO ultravioletphotoelectric detector has lower dark current and higher photoresponse speed.

Description

technical field [0001] The invention relates to the technical field of semiconductor ultraviolet detection, in particular to a high-performance mixed-phase ZnMgO ultraviolet detector and a preparation method thereof. Background technique [0002] Ultraviolet detection technology has broad application prospects in military and civilian fields such as missile tail flame detection, flame sensing, air and water purification, and air-to-air communication. Ultraviolet radiation with a wavelength of less than 280nm is blocked by the ozone layer above the earth and can hardly propagate to the surface of the earth. It is called solar blind ultraviolet radiation. The sun-blind ultraviolet detector working in the sun-blind band is not interfered by solar radiation, has higher sensitivity, and can be used in missile early warning and other aspects. In recent years, wide-bandgap semiconductor ultraviolet detectors are considered to be the third-generation ultraviolet detectors that can ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0296H01L31/108H01L31/18H01L21/02
CPCH01L21/02554H01L21/0262H01L31/02966H01L31/1085H01L31/1832H01L31/1836Y02P70/50
Inventor 刘可为侯其超申德振陈星张振中李炳辉
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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