A Photodetector with Tunable Energy Bandgap Based on Black Phosphorus/Molybdenum Disulfide Heterojunction

Abstract

The invention discloses a photodetector with adjustable energy bandgap based on black phosphorus / molybdenum disulfide heterojunction, relates to the technical field of photodetection, and solves the problem that the device does not have wide spectrum, fast and low-noise response characteristics. The present invention comprises a silicon dioxide substrate layer, a first graphene layer, a first isolation dielectric layer, a molybdenum disulfide layer, a black phosphorus conductive layer, and a second isolation dielectric layer arranged on the silicon dioxide substrate layer in sequence from bottom to top and the second graphene layer; the molybdenum disulfide layer and the black phosphorus conductive layer form a heterojunction structure; the black phosphorus conductive layer is provided with a first lead-out electrode and a second lead-out electrode, the second isolation dielectric layer and the first lead-out electrode Two graphene layers separate the first lead-out electrode and the second lead-out electrode; the first graphene layer extends out of the first isolation medium layer, and a first electrode is arranged on the extended first graphene layer, and the first graphene layer The second electrode is arranged on the two graphene layers to form a flat capacitor structure. The invention is used to realize a photodetector with wide spectrum and ultrafast response.

Description

technical field [0001] The invention discloses a photodetector based on black phosphorus / molybdenum disulfide heterojunction with adjustable energy bandgap, which is used to realize a photodetector with wide spectrum and ultrafast response, and belongs to the field of photodetection technology. Background technique [0002] The applicable spectral range and detection bandwidth of traditional photodetectors based on group IV and III-V semiconductor materials (such as silicon and gallium arsenide) are generally restricted by the energy band gap and carrier transit time of the material itself, so It is difficult to realize optical modulators with wide spectrum and ultrafast response. With the rapid development of science and technology, the requirements for device integration are getting higher and higher, and the device size needs to be continuously reduced. Devices based on traditional materials for photodetectors are approaching the limit. In recent years, more and more att...

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Problems solved by technology

[0005] The present invention provides a photodetector based on black phosphorus / molybdenum disulfide heterojunction with adjustable energy bandgap to solve the above shortcomings, and solves the problem that the device does not have wide spectrum, fast and low noise response characteristics, and does not have the same CMOS process compatibility, small size, easy integration and adjustable response spectrum range

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