Organic field-effect transistor memory with self-blocking layer structure and fabrication method of organic field-effect transistor memory

Abstract

The invention discloses an organic field-effect transistor memory with a self-blocking layer structure. A source-drain electrode, an organic photosensitive semiconductor layer, a gate insulation layer and a substrate are sequentially arranged from top to bottom, and a hybrid polymer self-blocking thin film layer is arranged between the organic photosensitive semiconductor layer and the gate insulation layer. The storage performance of the device is improved by a simple process means, so that the storage capacity, the switching speed and the tolerance of the device are greatly improved; and moreover, the fabrication cost of the device is reduced, and the promotion and application are convenient.

Description

technical field

[0001] The invention belongs to the technical field of memory in the semiconductor industry, and in particular relates to an organic field effect transistor memory with a self-blocking layer structure and a preparation method thereof. Background technique

[0002] As a basic component in electronic circuits, organic field-effect transistors are very suitable for the development direction of the next generation of wearable electronics industry because of their wide source of materials, lightness, and simple processing technology, and can be applied to large-area printing processes. At the same time, the structure of the organic field effect transistor determines that it has a wealth of functional applications, such as light emission, storage, sensing, switching, etc., so it has broad application prospects in the field of information electronics.

[0003] In the charge transport layer there is a class of insulating materials that can permanently store charges...

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