Two-dimensional superlattice indium selenide and preparation method and application thereof in fabrication of photoelectric detector

A photodetector and superlattice technology, applied in circuits, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problems of low light detection performance and poor electrical transport performance of two-dimensional semiconductor materials, and achieve high light response, The effect of good photoelectric detection performance and good application prospect
CN109411331AInactive Publication Date: 2019-03-01NORTHEAST FORESTRY UNIVERSITY
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NORTHEAST FORESTRY UNIVERSITY
Publication Date
2019-03-01
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses two-dimensional superlattice indium selenide and preparation method and application thereof in fabrication of a photoelectric detector, and belongs to the field of a high-performance photoelectric detector. The fabrication method of the two-dimensional superlattice indium selenide comprises the steps of pre-processing a SiO2 / Si substrate; transferring onto the SiO2 / Si substrate after an InSe material is pasted with transparent glue, and immersing in acetone; and performing high-temperature processing under a vacuum condition, thereby obtaining a two-dimensional superlattice InSe nanosheet on a surface of the SiO2 / Si substrate. The two-dimensional superlattice InSe prepared by the invention has the advantages of high electrical transmission performance, high light response, favorable stability and rapid light response speed and has a good application prospect in the field of the high-performance photoelectric detector.
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Description

technical field

[0001] The invention belongs to the field of high-performance photodetectors; in particular, it relates to two-dimensional superlattice indium selenide, its preparation method and its application in preparing photodetectors. Background technique

[0002] A photodetector is a device that converts optical signals into electrical signals. It has great application prospects in the fields of optical communication, optical imaging, environmental monitoring, missile monitoring and remote control. It is a hot research field in the scientific community and has attracted scientists. Widespread attention and rapid development. Semiconductor materials with good light-absorbing ability and electrical properties are the basis for designing and preparing high-performance photodetectors. Photodetectors based on traditional semiconductor materials (silicon, gallium nitride, and indium gallium arsenide) exhibit small photodetection performance, with photoresponse values ​​les...

Claims

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