45results about How to "Good photodetection performance" patented technology

The invention discloses a hartmann wavefront sensor based on a unit photo-sensitive detector array. The hartmann wavefront sensor consists of a phase spatial light modulator, a microlens array, a single-mode fiber array and the unit photo-sensitive detector array, wherein the front two-order binary phase modulation is carried out on sub-light waves in each sub-aperture of the hartmann wavefront sensor by the phase spatial light modulator at the same time; the modulated sub-light waves are respectively coupled into the single-mode fiber array of a focal plane to achieve mode selection filtering after the micro-lens array is arranged on the phase modulator, and the light intensity after the mode selection filtering is received by the unit photo-sensitive detector array; and wavefront slope information inside each sub-aperture is solved by processing light intensity data, and finally an incident light wave wavefront is rebuilt by using a hartmann wavefront sensor wavefront mode recovery algorithm. According to the hartmann wavefront sensor based on the unit photo-sensitive detector array, the quantity of probe units is reduced, and the problem of decreasing of wavefront measurement accuracy caused by facula discrete sampling is avoided, so that the wavefront measurement accuracy is not affected by decreasing of the quantity of the probe units, and the hartmann wavefront sensor can be applied to the field of high-speed and high-precision wavefront detection.

The invention provides a two-dimensional tellurium nano-sheet. The thickness of the two-dimensional tellurium nano-sheet is 1 to 50nm. The two-dimensional tellurium nano-sheet provided by the invention has good photoelectric detection performance. The invention further provides a preparation method of the two-dimensional tellurium nano-sheet; the preparation method comprises the following steps: providing a tellurium raw material; stripping the tellurium raw material by adopting a liquid-phase stripping method, so as to obtain the two-dimensional tellurium nano-sheet, wherein the thickness ofthe two-dimensional tellurium nano-sheet is 1 to 50nm. According to the two-dimensional tellurium nano-sheet and the preparation method, the two-dimensional tellurium nano-sheet is prepared from a non-laminar tellurium raw material by adopting a liquid-phase stripping method for the first time and the stripping effect is good; the two-dimensional tellurium nano-sheet can be prepared in a large scale and the cost is relatively low; the preparation method is simple and easy to operate. The invention further provides application of the two-dimensional tellurium nano-sheet to optical detectors.

The invention discloses a novel high-performance light modulation thin film transistor based on a quantum dot doped gate insulating layer. A preparation method thereof comprises the following steps: depositing an active layer and a source and drain electrode contact layer on a base in sequence; spinning quantum dots and organic optical cement on the active layer to prepare the gate insulating layer; etching via holes for connecting the contact layer with active and drain electrodes on the gate insulating layer; and finally preparing a transparent electrode on the gate insulating layer, and etching the transparent electrode as the drain electrode, gate electrode and source electrode of a plane. Besides the three modulation electrodes of a traditional source and drain gate, the thin film transistor device disclosed by the invention can be taken as a fourth end modulation electrode through incident light. The light modulation thin film transistor with photoelectric detection and signal read functions is prepared by using the thin film transistor gate insulating layer doped with the quantum dots, so that the structure and preparation technology of the light modulation thin film transistor are greatly simplified, the dimensions of the device are shortened, and the photoelectric detection performance is improved.

The invention discloses two-dimensional superlattice indium selenide and preparation method and application thereof in fabrication of a photoelectric detector, and belongs to the field of a high-performance photoelectric detector. The fabrication method of the two-dimensional superlattice indium selenide comprises the steps of pre-processing a SiO2 / Si substrate; transferring onto the SiO2 / Si substrate after an InSe material is pasted with transparent glue, and immersing in acetone; and performing high-temperature processing under a vacuum condition, thereby obtaining a two-dimensional superlattice InSe nanosheet on a surface of the SiO2 / Si substrate. The two-dimensional superlattice InSe prepared by the invention has the advantages of high electrical transmission performance, high light response, favorable stability and rapid light response speed and has a good application prospect in the field of the high-performance photoelectric detector.

The invention is applicable to the technical field of photoelectricity. The invention provides a rare earth doped perovskite nanocrystal, a preparation method thereof and a photoelectric detector. Therare earth doped perovskite nanocrystal is obtained by taking CsPbX3 perovskite nanocrystal as a matrix material and doping the Pb position of the CsPbX3 perovskite nanocrystal with Yb<3+> ions and metal ions, wherein the X position of the CsPbX3 perovskite nanocrystal is one of Cl, Br, I and F, and the metal ions are one of Mn<2+>, Cd<2+>, Ni<2+> and Cr<3+>. The rare earth doped perovskite nanocrystal provided by the embodiment of the invention has a good light-emitting effect and light-emitting stability, and is convenient to apply in practice. When the rare earth doped perovskite nanocrystal is applied to a photoelectric detector, the photoelectric detector can realize wide-band response with the wavelength of 200-1100nm, so that the application value of the photoelectric detector canbe improved.

The present invention discloses a perovskite nanowire array photoelectric detector and a preparation method thereof. The photoelectric detector comprises a substrate (1), an organic-inorganic hybrid perovskite nanowire array (2) composited at the upper surface of the substrate (1) and an electrode (4) arranged at the upper portion of the organic-inorganic hybrid perovskite nanowire array (2), a 4, 4'-cyclohexyl-2[N, N-2(4-methylphenyl)aniline] protective layer (3) is composited at the upper surface of the substrate (1), the upper portion of the organic-inorganic hybrid perovskite nanowire array (2) is coated with the 4, 4'-cyclohexyl-2[N, N-2(4-methylphenyl)aniline] protective layer (3), and the electrode (4) is arranged at the upper surface of the 4, 4'-cyclohexyl-2[N, N-2(4-methylphenyl)aniline] protective layer (3). The perovskite nanowire array photoelectric detector is good in photoelectric detection performance, stable in performance in the air and low in cost.

The invention relates to a micro-nano single crystal flexible photoelectric detector with a groove array structure and a preparation method thereof. The preparation method comprises the following steps: 1) preparing a silicon template with the groove array micro-nano structure; 2) transferring the groove array micro-nano structure on the silicon template to a flexible substrate by adopting a hot stamping mode; 3) preparing a perovskite micro-nano single crystal on the flexible substrate; and 4) performing magnetron sputtering of a Cu electrode on the perovskite micro-nano single crystal of the flexible substrate to obtain the micro-nano single crystal flexible photoelectric detector with the groove array structure. Compared with the prior art, the flexible photoelectric detector can be constructed in a low-cost and large-area manner in the invention, and the photoelectric conversion performance of the flexible photoelectric detector is improved.

The invention discloses a manufacturing method of a vertical photoelectric detector based on independent tin disulfide nanosheets, and relates to the technical field of photoelectric detectors. The manufacturing method comprises the following steps: I, preparing independent tin disulfide nanosheets which are arranged vertically on a conductive substrate; II, rotationally coating the tin disulfide nanosheets with a transparent insulating layer, and drying in order to encapsulate the tin disulfide nanosheets; III, etching to remove a part of the transparent insulating layer with a plasma etching process in order to expose a part of the tin disulfide nanosheets again; IV, evaporating a layer of transparent metal electrode to obtain a device. A manufacturing process of the vertical photoelectric detector is easy to implement, and the use of a complex and complicated photoetching technology is avoided; compared with a conventional photoelectric detection being of a parallel structure, the vertical photoelectric detector based on the independent tin disulfide nanosheets has the advantages that scattering and doping caused by the substrate are avoided, and light absorption is increased, so that the photoelectric detection performance of the vertical photoelectric detector is improved.

The invention provides a tensile strained germanium MSM photoelectric detector and the manufacturing method thereof. The method at least comprises the steps that S1, a substrate is provided and a sacrificial layer and a germanium layer are formed on the substrate in sequence; S2, a metal layer is formed on the germanium layer, and the metal layer provides stress for the germanium layer; S3, the metal layer is patterned and a pair of metal main bases and a pair of metal sub-bases are formed; S4, the germanium layer is patterned and germanium main bases and germanium sub-bases are formed below the metal main bases and the metal sub-bases respectively, and at least one germanium bridge seam is formed between each pair of germanium sub-bases; S5, the portions, below the germanium bridge seams and below the germanium sub-bases, of the sacrificial layer are etched off so that the germanium bridge seams and the germanium sub-bases are suspended in the air, the suspended germanium sub-bases are curved under the action of the action of the metal layer to enable the germanium bridge seams to be stretched, and then the tensile strained germanium MSM photoelectric detector is obtained. According to the tensile strained germanium MSM photoelectric detector and the manufacturing method thereof, the photoelectric detection property of the MSM photoelectric detector can be improved.

The invention provides a preparation method of a two-dimensional graphdiyne nanosheet. The method comprises the following steps: 1, providing an ethanol dispersion of graphdiyne; and transferring theethanol dispersion liquid of graphdiyne to a temperature of 2-15 DEG C, carrying out ultrasonic treatment for 1-7 days, separating the ethanol dispersion liquid of graphdiyne after ultrasonic treatment by using a step-by-step centrifugation method, collecting graphdiyne nanosheets obtained at a speed of 5,000-8,000 r / min, and drying the obtained two-dimensional graphdiyne nanosheets. The two-dimensional graphdiyne nanosheet is an ultrathin graphdiyne nanosheet, of which the thickness can reach 0.46 nm; the preparation process of the ultrathin graphdiyne nanosheet is simple and rapid, the thickness of the graphdiyne nanosheet is controllable, and large-scale preparation of the graphdiyne nanosheet is also easy to realize. The invention also provides a working electrode and a preparation method thereof and further provides a photoelectric detector.

The invention discloses a flexible transient silicon thin film photodetector with an MSM structure, which mainly solves the problem that the existing photodetector can not simultaneously satisfy the flexible and transient degradable characteristics. The flexible transient silicon thin film photodetector with an MSM structure comprises a flexible substrate layer (1), a bonding layer (2), a siliconthin film active layer (3), an ohmic contact layer (4), a passivation protection layer (5), and a light reflection reduction layer (6), wherein the silicon thin film active layer adopts n-type singlecrystal light doped thin film silicon; a TiO2 insertion layer is arranged in the ohmic contact layer to improve ohmic contact and avoid damages of a high temperature process to the flexible substrate;and the light reflection reduction layer adopts a ZnO seed layer-ZnO nano-cylindrical line array composite structure, high reflection reduction and light trapping can be realized, the absorption angle of the device is widened, the ultraviolet light detection ability is expanded, and the transient degradability is realized. the flexible and transient characteristics of the photodetector an be realized at the same time, and the photodetector can be applied to ultraviolet astronomy, medicine, biology, sky communication, flame detection and pollution monitoring.

The invention discloses a preparation method of a graphene quantum dot supported Ag-TiO2 nano array. The preparation method comprises the following steps: (a) preparing a TiO2 nano array; (b) preparing an Ag-TiO2 nano array: reducing Ag nano particles (Ag<+>) loaded on the TiO2 nano array prepared in the step (a) by UV rays to obtain the Ag-TiO2 nano array; and (c) preparing a graphene quantum dotsupported Ag-TiO2 nano array: evenly painting a graphene quantum dot dispersion liquid onto the surface of the Ag-TiO2 nano array prepared in the step (b) by a spinning coating technology, and dryingto obtain the graphene quantum dot supported Ag-TiO2 nano array. The raw materials are cheap and nontoxic, the preparation process is simple, Ag nano particles and graphene quantum dots are loaded onTiO2 nano arrays, and through the cooperation of Ag nano particles and graphene quantum dots, the visible light responsive performance of TiO2 nano array is enhanced.

The invention relates to the field of nano-materials, and particularly provides a NiO-ZnO ball-chain-shaped nano-material and a preparation method and application thereof. The NiO-ZnO ball-chain-shaped nano-material is mainly formed by sequentially connecting NiO-ZnO spherical particles. The NiO-ZnO spherical particles are of core-shell structures with Ni-Zn as cores and NiO-ZnO as shells. The material has a p-n heterogeneous structure, is in a ball chain shape, and has the excellent photocatalysis property, photo-electric property, pressure-sensitive property and gas-sensitive property whichcannot be reached by NiO semiconductors or ZnO semiconductors.

The invention provides a tensile strained germanium MSM photoelectric detector and the manufacturing method thereof. The method at least comprises the steps that S1, a substrate is provided and a sacrificial layer and a germanium layer are formed on the substrate in sequence; S2, a metal layer is formed on the germanium layer, and the metal layer provides stress for the germanium layer; S3, the metal layer is patterned and a pair of metal main bases and a pair of metal sub-bases are formed; S4, the germanium layer is patterned and germanium main bases and germanium sub-bases are formed below the metal main bases and the metal sub-bases respectively, and at least one germanium bridge seam is formed between each pair of germanium sub-bases; S5, the portions, below the germanium bridge seams and below the germanium sub-bases, of the sacrificial layer are etched off so that the germanium bridge seams and the germanium sub-bases are suspended in the air, the suspended germanium sub-bases are curved under the action of the action of the metal layer to enable the germanium bridge seams to be stretched, and then the tensile strained germanium MSM photoelectric detector is obtained. According to the tensile strained germanium MSM photoelectric detector and the manufacturing method thereof, the photoelectric detection property of the MSM photoelectric detector can be improved.

The invention belongs to the technical field of ultraviolet-visible detection, and discloses a SiC-based tungsten disulfide ultraviolet-visible photoelectric detector and a preparation method and application thereof. The structure of the detector is a back electrode / n + SiC (360 [mu]m) / n-SiC (11 [mu]m) / symmetric electrode / WS2 nanosheet. The preparation method comprises the following steps: preparing a micron-sized irregular WS2 nanosheet on a SiO2 / Si substrate through mechanical stripping; transferring WS2 to the SiC substrate on which symmetrical electrodes are deposited through a photoetching evaporation process through a PVA dry method transfer process; and finally, putting the SiC substrate attached with the WS2 / PVA film into deionized water or dimethyl sulfoxide at the temperature of 50-60 DEG C to be heated so that the PVA film can be dissolved; and performing annealing at the temperature of 100-250 DEG C in a protective atmosphere to obtain the detector. The performance of the WS2 detector is improved, application and development of SiC-based two-dimensional material functional devices are promoted, and commercialized popularization is facilitated.

The invention provides a 3-5[mu]m infrared band avalanche photodiode detector (APD) and a production method thereof. The infrared band APD comprises an antireflective film layer, a P+ type InSb electrode contact layer, an N type InSb layer, a P type epitaxial Si layer and an N+ type Si layer which are stacked from top to bottom, wherein the N type InSb layer is taken as an absorption layer, the Ptype epitaxial Si layer is taken as a multiplication layer, and the N type InSb layer and the P type epitaxial Si layer are an N type InSb layer and a P type epitaxial Si layer in an InSb / Si bonded wafer respectively. Therefore, absorption of InSb on infrared band lights is high, difference between electron ionization rate and hole ionization rate of an epitaxial Si material is relatively large, an excess noise factor of the epitaxial Si material is small, and multiplication performance with lower noise can be obtained; compared with the circumstance that the multiplication layer is InSb, noise of an InSb / Si APD device can be lowered, responsibility of an APD detector is improved, and high-speed and low-noise photoelectric detection effect can be realized by virtue of combination of the Ntype InSb layer as a relatively narrow absorption layer and the P type epitaxial Si layer as a narrow multiplication layer; meanwhile, the InSb / Si bonding wafer is used, so that thermal mismatch witha Si reading circuit is reduced.

The invention belongs to the technical field of micronano photoelectronics, and discloses a two-dimensional material photoelectric detector with an embedded reflecting mirror and a fabrication methodthereof. The two-dimensional material photoelectric detector sequentially comprises a substrate, a metal reflecting mirror, a dielectric layer, a two-dimensional material and a source-drain electrodefrom bottom to top, wherein the metal reflecting mirror is embedded between the substrate and the dielectric layer. The fabrication method comprises the steps of plating a layer of high-reflectivity metal on the substrate; plating the dielectric layer on the metal reflecting mirror; growing or transferring the two-dimensional material onto the dielectric layer; and plating the source-drain electrode on the two-dimensional material. The fabrication method of the two-dimensional material photoelectric detector with the embedded reflecting mirror has the advantages of a few process steps, high efficiency and the like and is simple to operate, and the detection performance of the device is effectively improved.

The invention relates to a method for realizing infrared photoelectric detection by regulating and controlling a metal / semiconductor Schottky junction through a pyroelectric effect of a polar semiconductor. A metal electrode is prepared on the surface of a polar semiconductor material, a Schottky junction is formed on the surface of a semiconductor, ultraviolet light is utilized to excite free electrons to improve infrared light absorption of the semiconductor, infrared light is utilized to excite a pyroelectric field of the polar semiconductor, and the pyroelectric field is utilized to regulate and control the junction height of the Schottky junction of a heterogeneous interface to regulate and control a light current. Therefore, infrared light detection is realized. The method is easy to operate and low in equipment requirement, large-area operation of the semiconductor material can be achieved, surface modification of the semiconductor material cannot reduce the light responsivity of the semiconductor material, and the method can be suitable for various semiconductor materials with polarity. According to the invention, the regulation and control effect is obvious, the responsivity of the device reaches 13mA / W, the response speed reaches 0.5 s, and the performance of the device has good stability and repeatability.

The invention provides a photoelectrochemistry type optical detector based on a two-dimensional selenium nanosheet. The photoelectrochemistry type detector comprises a working electrode, a counter electrode and electrolyte arranged between the working electrode and the counter electrode, wherein the working electrode comprises an electric conduction substrate and a semiconductor layer arranged onone side, which faces the counter electrode, of the electric conduction substrate; the material of the semiconductor layer comprises the two-dimensional selenium nanosheet. The optical detector provided by the invention has good performance. The invention also provides a preparation method for the photoelectrochemistry type optical detector based on the two-dimensional selenium nanosheet. The preparation method comprises the following steps: providing selenium raw materials, adopting a liquid phase stripping method to strip the selenium raw materials, and obtaining the two-dimensional seleniumnanosheet; dispersing the two-dimensional selenium nanosheet in solvent to form two-dimensional selenium nanosheet dispersion liquid, evenly coating the two-dimensional selenium nanosheet dispersionliquid on the electric conduction substrate, and drying to obtain the working electrode; providing the counter electrode, injecting the electrolyte between the working electrode and the counter electrode, and packaging to obtain the optical detector. The preparation method provided by the invention is simple and easy to operate.

The invention discloses a flexible photoelectric detector based on a selenide / sulfide heterojunction and a preparation method thereof. The sensor adopts a PI film as a substrate, ITO as an electrode, and a heterojunction formed by a P-type selenide with a forbidden band width of 1.2-2.4 eV (such as GaSe with a forbidden band width of about 2.1 eV) and an n-type sulfide with a forbidden band width of 1.8-2.2 eV (such as MoS2 with a forbidden band width of about 1.8 eV) as a functional layer. The preparation method of the flexible photoelectric detector comprises the following steps: firstly, acquiring an ITO electrode through a photoetching technology and ITO wet etching, then acquiring a submicron slice of selenide and sulfide by adopting a mechanical stripping mode, accurately aligning the submicron slice with the ITO electrode, and transferring the submicron slice to the ITO electrode based on a PI substrate to form an ultrathin two-dimensional semiconductor heterojunction (wherein the thickness of each layer is in a range of 10 nm to 30 nm) with an area of a junction region being in a range of 1*10<2> to 2.5*10<3> square microns. The preparation method is convenient, environment-friendly and cheap; the selenide / sulfide heterojunction photoelectric detector prepared based on the method has good bendability, can be applied to more scenes compared with a rigid photoelectric detector, and can be applied to more fields due to the material characteristics of the selenide / sulfide heterojunction; and the photoelectric detector has good photoelectric detection performance and can achieve good photoelectric detection effect.

The invention relates to the field of research, development and application of a novel MXene-based photoelectric detector, in particular to a method for uniformly depositing a thin film based on a liquid-phase MXene material, high-precision patterning and preparing a photoelectric device on a large scale. The method comprises the following steps: spin-coating an MXene material suspension through a spin coater, and preparing a uniform MXene material film on a silicon wafer; and realizing the high-precision patterning of the MXene material thin film by adopting a photoetching-dry etching process. The MXene-based photoelectric detector is composed of a silicon substrate, an electrode, a semiconductor layer, a transparent conductive film layer and the like, the electrode, the semiconductor layer, the transparent conductive film layer and the like are arranged on the silicon substrate, the semiconductor layer is made of n-type silicon formed by doping, the transparent conductive film layer is made of MXene materials, and the electrode is formed by compounding a Ti layer and an Au layer. According to the invention, the patterning of the large-area MXene material film is realized by using a photoetching-dry etching process, so that the high-resolution MXene-based photoelectric detector is constructed, and the MXene-based photoelectric detector has good photoelectric performance and long cycle life.

The invention provides a photoelectric detector. The photoelectric detector comprises a working electrode, a reference electrode and an electrolyte. The working electrode and the reference electrode are both arranged in the electrolyte. The working electrode comprises a substrate and a Bi2Te3 nanosheet arranged on the surface of the substrate, and the transverse size of the Bi2Te3 nanosheet is 470-940 nm. The photoelectric detector is made of Bi2Te3 nanosheets. When the photoelectric detector performs detection, the photoelectric detector generates a current response signal under illumination,and light detection can be realized according to the current response signal. The photoelectric detector provided by the invention not only has good environmental stability, but also has excellent photoelectric detection performance. The invention also provides a preparation method of the photoelectric detector.

The invention provides a preparation method of a bismuth oxygen sulfur two-dimensional material and a photoelectric detector. The preparation method includes step 1: dispersing thiourea in deionized water, stirring magnetically until it is completely dissolved, and then adding ammonium bismuth citrate; step 2 : Stir the solution in step 1 evenly, add potassium hydroxide at a concentration of 0.2 to 4.0 mol / L, and stir at room temperature for 1 to 3 h; step 3: transfer the stirred mixed solution to a high temperature resistant parasite In a polyphenylene reactor, keep warm at 25 to 220°C for 3 to 48 h; Step 4: Wash the product alternately with deionized water or absolute ethanol for 2 to 6 times to prepare Bi 2 o 2 S Two-dimensional materials. The beneficial effect of the present invention is: Bi prepared by the present invention 2 o 2 S two-dimensional material has good photoelectric properties, and the prepared photodetector has the characteristics of high photo-dark current ratio and good cycle stability.

The invention belongs to the technical field of ultraviolet-visible detection, and discloses a SiC-based tungsten disulfide ultraviolet-visible photodetector as well as a preparation method and application thereof. The structure of the detector is the back electrode / n + SiC(360μm) / n ‑ SiC(11μm) / symmetric electrode / WS 2 nanosheets; the detectors are first on SiO 2 Fabrication of micron-sized irregular WS on Si substrate by mechanical exfoliation 2 nanosheets; and then through the PVA dry transfer process, the WS 2 transferred to the SiC substrate on which symmetrical electrodes have been deposited by a photolithographic evaporation process, and finally the WS 2 / The SiC substrate of the PVA film is heated in deionized water or dimethyl sulfoxide at 50-60°C to dissolve the PVA film; it is obtained by annealing at 100-250°C in a protective atmosphere. The invention improves the WS 2 The performance of the detector has promoted the application and development of SiC-based two-dimensional material functional devices, and is conducive to commercial promotion.

The invention discloses a novel high-performance light modulation thin film transistor based on a quantum dot doped gate insulating layer. A preparation method thereof comprises the following steps: depositing an active layer and a source and drain electrode contact layer on a base in sequence; spinning quantum dots and organic optical cement on the active layer to prepare the gate insulating layer; etching via holes for connecting the contact layer with active and drain electrodes on the gate insulating layer; and finally preparing a transparent electrode on the gate insulating layer, and etching the transparent electrode as the drain electrode, gate electrode and source electrode of a plane. Besides the three modulation electrodes of a traditional source and drain gate, the thin film transistor device disclosed by the invention can be taken as a fourth end modulation electrode through incident light. The light modulation thin film transistor with photoelectric detection and signal read functions is prepared by using the thin film transistor gate insulating layer doped with the quantum dots, so that the structure and preparation technology of the light modulation thin film transistor are greatly simplified, the dimensions of the device are shortened, and the photoelectric detection performance is improved.

The present invention is generally directed to the field of organic semiconductor material. It provides a donor-acceptor conjugated polymer containing 3,4-ethylenedioxythiophene ring as a side chain and a photodetector device containing the same.

The invention provides tin-doped two-dimensional molybdenum sulfide, a preparation method and application thereof. The preparation method is simple, feasible and controllable. According to the technical scheme, the preparation problem of a tin-doped two-dimensional molybdenum sulfide material is solved; and the preparation method comprises safe and cheap preparation equipment and reaction raw material obtaining, and a simple and feasible whole-course pollution-free technological process, wherein the thickness of the obtained material is smaller than 10 nm, the crystal structure of a parent phase is reserved, no second phase exists, or alloying is avoided, the photoelectric property of the doped two-dimensional molybdenum sulfide material is remarkably improved, a material basis is provided for potential application of nano electronic devices and photoelectric functional devices, and the requirements of future industrial production are met.

The invention provides a PVK-TMDCs Van der Waals heterojunction and a preparation method thereof, and belongs to the technical field of photoelectric materials. A transition metal chalcogenide film is prepared on a substrate by adopting a chemical vapor deposition method; and a perovskite film is prepared on the surface of the transition metal chalcogenide film by adopting a physical vapor deposition method to obtain the PVK-TMDCs Van der Waals heterojunction. The transition metal chalcogenide film is prepared on the substrate by adopting a chemical vapor deposition method, the film with high purity, good compactness, small residual stress and good crystallization is obtained, then the perovskite film is prepared on the surface of the transition metal chalcogenide film by adopting a physical vapor deposition method, the transition metal chalcogenide film can regulate and control the growth structure and energy level of the perovskite film, impurities are prevented from appearing in a heterojunction interface, and the photoelectric detection performance of a photoelectric material is improved.