5results about How to "Good photodetection performance" patented technology

The invention belongs to the technical field of optical detectors. The invention provides a preparation method of a broadband optical detector for dynamic encryption communication. The preparation method comprises the following steps: S1, providing a SiO2 / Si substrate; s2, sequentially transferring a first transition metal sulfide and a second transition metal sulfide on the SiO2 / Si substrate in a directional transfer manner to form a transition metal sulfide layer; s3, spin-coating a PbSe QDs solution or a PbS QDs solution on the transition metal sulfide layer to form a quantum dot film with uniform quantum dots; s4, an EDT acetonitrile solution is dropwise added to the surface of the quantum dot thin film, standing reaction is conducted for preset time, and then spin coating is conducted to remove redundant ligands and reaction by-products; and S5, placing the mixed dimension quantum dot / transition metal sulfide heterostructure optical detector on a heating table for annealing treatment to complete the preparation of the mixed dimension quantum dot / transition metal sulfide heterostructure optical detector. Wherein the energy barrier at the quantum dot / transition metal sulfide heterostructure can be independently and cooperatively regulated and controlled through the drain-source voltage and the gate-source voltage, and the confidentiality of the photoelectric detector can be improved.

The application provides a visible light positioning system and a preparation method of a silicon-based flexible photoelectric detector, and relates to the technical field of visible light positioning. The visible light positioning system comprises a fixed module with a curved surface structure, at least two silicon-based flexible photoelectric detectors, a data processing module and a positioning analysis module. The silicon-based flexible photoelectric detector comprises, from top to bottom, a front grid electrode layer, a hole transport layer, a passivation layer, an N-type monocrystalline silicon layer and a back metal electrode layer arranged in a stacked manner. The N-type monocrystalline silicon layer has a pyramid structure on both sides, and the hole transport layer, the passivation layer and the back metal electrode layer are conformally arranged with the N-type monocrystalline silicon layer. The silicon-based flexible photoelectric detector has the characteristics of flexibility, self-supporting and self-power supply, and has excellent photoelectric detection capability. The visible light positioning system has a simple structure, reduces the volume and cost, and realizes accurate positioning of the measured light source.

The invention belongs to the technical field of quantum dots, and particularly discloses a preparation method of high-quality HgTe colloidal quantum dot ink and a film, and the preparation method comprises the following steps: taking an HgTe colloidal solution; a ligand solution is prepared, wherein 5 mg of DDAB, 30 mg of HgBr2, 30 mg of HgI2 and 200 [mu] L of beta-ME are added into every 5 mL of the DMF solution, and the ligand solution is obtained through mixing; the HgTe colloidal solution and the ligand solution are mixed, dissolved and oscillated, supernate is removed and cleaned with normal octane, methylbenzene is used as an anti-precipitating agent, after the supernate is removed through centrifugation, precipitates are dried, and final HgTe CQDs powder is obtained; the preparation method comprises the following steps: dissolving HgTe CQDs powder into a DMF (40L) and DMSO (10L) mixed solution again to form ink-like ink, and spin-coating the ink on a spin-coating machine to obtain the film, carrying out surface environment modification by using beta-ME, HgBr2, HgI2, DDAB and other ligands, and blending a quantum dot ink solvent formula to change the surface chemical environment of quantum dots, thereby successfully preparing the compact and uniform HgTe CQD film with small surface roughness (RMS = 7.3 nm).

The present invention discloses a microstructure-enhanced room-temperature ultra-wide spectrum detector with blackbody sensitive response, comprising a metal disk microstructure array, a strip metal electrode and a lead electrode integrated on a Si / SiO2 substrate, wherein the two sides of the metal disk microstructure array are in asymmetric electrode contact, one side is connected to the first strip metal electrode through the lead electrode, and the opposite side is connected to the second strip metal electrode through a tellurium nanoribbon conductive channel with blackbody sensitivity and ultra-wide spectrum response, forming a good ohmic contact. The present invention broadens the response range of the waveband from visible to terahertz, and realizes ultra-wide spectrum detection, self-driving, low dark current and high response photoelectric detection with blackbody sensitivity at room temperature.

The invention discloses a high-density stretchable organic opto-transistor array and a preparation method and application thereof. The high-density stretchable organic opto-transistor array is an organic opto-transistor based on a polymer film under a nanometer confinement. The organic opto-transistor adopts a top gate top contact structure, a top gate bottom contact structure, a bottom gate top contact structure or a bottom gate bottom contact structure, and comprises a stretchable substrate, a stretchable insulating layer, a stretchable polymer semiconductor layer, a stretchable gate electrode, a stretchable source microelectrode layer and a stretchable drain microelectrode layer. Wherein the stretchable polymer semiconductor layer is a nano-confinement polymer film, and the nano-confinement polymer film serves as a photosensitive layer and a semiconductor layer at the same time and directly participates in carrier transport while inducing photons. The high-density organic opto-transistor array has high-sensitivity, low-voltage and low-dose X-ray detection capability, high stretchability and device uniformity, can be directly attached to the surface or the interior of a complex object, and can obtain a high-definition detection result in a relatively low radiation dose and extremely short time.