2results about How to "Good photodetection performance" patented technology

The invention belongs to the technical field of optical detectors. The invention provides a preparation method of a broadband optical detector for dynamic encryption communication. The preparation method comprises the following steps: S1, providing a SiO2 / Si substrate; s2, sequentially transferring a first transition metal sulfide and a second transition metal sulfide on the SiO2 / Si substrate in a directional transfer manner to form a transition metal sulfide layer; s3, spin-coating a PbSe QDs solution or a PbS QDs solution on the transition metal sulfide layer to form a quantum dot film with uniform quantum dots; s4, an EDT acetonitrile solution is dropwise added to the surface of the quantum dot thin film, standing reaction is conducted for preset time, and then spin coating is conducted to remove redundant ligands and reaction by-products; and S5, placing the mixed dimension quantum dot / transition metal sulfide heterostructure optical detector on a heating table for annealing treatment to complete the preparation of the mixed dimension quantum dot / transition metal sulfide heterostructure optical detector. Wherein the energy barrier at the quantum dot / transition metal sulfide heterostructure can be independently and cooperatively regulated and controlled through the drain-source voltage and the gate-source voltage, and the confidentiality of the photoelectric detector can be improved.

The application provides a visible light positioning system and a preparation method of a silicon-based flexible photoelectric detector, and relates to the technical field of visible light positioning. The visible light positioning system comprises a fixed module with a curved surface structure, at least two silicon-based flexible photoelectric detectors, a data processing module and a positioning analysis module. The silicon-based flexible photoelectric detector comprises, from top to bottom, a front grid electrode layer, a hole transport layer, a passivation layer, an N-type monocrystalline silicon layer and a back metal electrode layer arranged in a stacked manner. The N-type monocrystalline silicon layer has a pyramid structure on both sides, and the hole transport layer, the passivation layer and the back metal electrode layer are conformally arranged with the N-type monocrystalline silicon layer. The silicon-based flexible photoelectric detector has the characteristics of flexibility, self-supporting and self-power supply, and has excellent photoelectric detection capability. The visible light positioning system has a simple structure, reduces the volume and cost, and realizes accurate positioning of the measured light source.