Tin-doped two-dimensional molybdenum sulfide, preparation method and application thereof

A technology of molybdenum sulfide and molybdenum sources, applied in chemical instruments and methods, from chemically reactive gases, nanotechnology for materials and surface science, etc., can solve the application limitations of two-dimensional transition metal dichalcogenide materials, charge Problems such as the deviation of the ability to absorb photons in the mobility and the inability to realize the preparation of doped two-dimensional materials have achieved the effects of improved photodetection performance, stable and controllable growth conditions, and low cost.

Pending Publication Date: 2021-07-27
HANGZHOU DIANZI UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The first purpose of the present invention is to provide tin-doped materials in order to solve the defects of the existing two-dimensional material doping method, complex equipment, cumbersome process, harsh preparation conditions, and the inability to realize the preparation of large-area uniformly distributed doped two-dimensional materials. Preparation method of two-dimensional molybdenum sulfide
[0011] Another purpose of the present invention is to solve the problem that the properties of existing two-dimensional transition metal dichalcogenide materials are easily modulated by the surface dielectric state, and there is a large deviation between the charge mobility and the ability to absorb photons from the theoretically predicted value, so that The application of two-dimensional transition metal dichalcogenide materials is limited to provide a thickness of less than 10nm, and retains the crystal structure of the parent phase, no second phase or alloying, and the photoelectric performance of the two-dimensional molybdenum sulfide material after doping is remarkable. Enhanced tin-doped two-dimensional molybdenum sulfide

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Tin-doped two-dimensional molybdenum sulfide, preparation method and application thereof
  • Tin-doped two-dimensional molybdenum sulfide, preparation method and application thereof
  • Tin-doped two-dimensional molybdenum sulfide, preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0042] The invention provides a method for preparing tin-doped two-dimensional molybdenum sulfide, the preparation method comprising the following steps:

[0043] 1) Preparation of the insulating substrate: ultrasonically treat the insulating substrate in different organic solvents, and dry it with nitrogen after cleaning;

[0044] 2) Preparation of reactants: Weigh the precursor molybdenum source, tin source and sulfur source, place the precursor molybdenum source, tin source and sulfur source in three independent reaction vessel quartz boats respectively, and place the The insulating substrate is buckled upside down on the quartz boat of the reaction vessel carrying the molybdenum source;

[0045] 3) Reaction temperature setting: Different temperature zones of the reaction furnace are set according to different heating rates, heating phases, constant temperature phases and cooling phase time;

[0046] 4) Generation of the product: First, put the three reaction vessels obtai...

Embodiment 1

[0051] This embodiment discloses a method for preparing tin-doped two-dimensional molybdenum sulfide under normal pressure, which includes the following steps:

[0052] 1) Preparation of insulating silicon wafer substrate: put the cut insulating silicon wafer into acetone and isopropanol for ultrasonic treatment, and finally wash with deionized water and blow dry with nitrogen;

[0053] 2) Weighing of reactants: Use an electronic balance to weigh the precursor molybdenum trioxide (MoO 3 ) 10mg, tin disulfide (SnS 2 ) 200mg and sulfur powder (S) 100mg, then the reactants were placed in three independent quartz boats, and finally the clean insulating silicon wafer after step 1) was processed upside down on the quartz boat carrying molybdenum oxide;

[0054] 3) Setting of the reaction temperature: Each temperature zone of the three-temperature zone tube furnace is set according to different heating rates and the time of the heating stage, constant temperature stage and cooling s...

Embodiment 2

[0057] This embodiment discloses a method for preparing tin-doped two-dimensional molybdenum sulfide under normal pressure, which includes the following steps:

[0058] 1) Preparation of insulating silicon wafer substrate: put the cut insulating silicon wafer into acetone and isopropanol for ultrasonic treatment, and finally wash with deionized water and blow dry with nitrogen;

[0059] 2) Weighing of reactants: Use an electronic balance to weigh the precursor molybdenum trioxide (MoO 3 ) 10mg, tin tetrachloride (SnCl 4 ) 220mg and sulfur powder (S) 80mg, then the reactants were placed in three independent quartz boats, and finally the clean insulating silicon wafer after step 1) was processed upside down on the quartz boat carrying molybdenum oxide;

[0060] 3) Setting of the reaction temperature: each temperature zone of the three-temperature zone tube furnace is set according to different heating rates and the time of the heating stage, constant temperature stage and cooli...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides tin-doped two-dimensional molybdenum sulfide, a preparation method and application thereof. The preparation method is simple, feasible and controllable. According to the technical scheme, the preparation problem of a tin-doped two-dimensional molybdenum sulfide material is solved; and the preparation method comprises safe and cheap preparation equipment and reaction raw material obtaining, and a simple and feasible whole-course pollution-free technological process, wherein the thickness of the obtained material is smaller than 10 nm, the crystal structure of a parent phase is reserved, no second phase exists, or alloying is avoided, the photoelectric property of the doped two-dimensional molybdenum sulfide material is remarkably improved, a material basis is provided for potential application of nano electronic devices and photoelectric functional devices, and the requirements of future industrial production are met.

Description

technical field [0001] The invention belongs to the field of preparation technology and application of new semiconductor materials, relates to tin-doped two-dimensional molybdenum sulfide, and in particular to a simple, controllable tin-doped two-dimensional molybdenum sulfide and its preparation method and application. Background technique [0002] Graphene (Graphene) has been obtained by mechanical exfoliation in 2004 by Professor Geim's research group at the University of Manchester in the United Kingdom. It has aroused the eager attention and strong interest of researchers due to its unique properties, and it is predicted that it is very likely to be used in nanoelectronics. Devices, gas sensors, energy storage and composite materials have set off revolutionary changes in many fields. However, transistors made of graphene with zero band gap cannot be switched, which limits its application in optoelectronic devices and digital electronic devices. For this field, semicond...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B29/46C30B29/64C30B25/00B82Y30/00B82Y40/00B82Y20/00H01L31/032
CPCC30B29/46C30B29/64C30B25/00B82Y30/00B82Y40/00B82Y20/00H01L31/032
Inventor 张骐王和淼应豪挺张永军
Owner HANGZHOU DIANZI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap