Tensile strain germanium msm photodetector and method for making the same

A technology of photodetector and manufacturing method, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve problems such as poor photodetection performance, and achieve the effects of improving photodetection performance, increasing absorption coefficient, and increasing bending degree

Active Publication Date: 2016-08-17
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a tensile strain germanium photodetector and a manufacturing method thereof, which are used to solve the problem of poor photodetection performance of metal-semiconductor-metal photodetectors in the prior art. question

Method used

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  • Tensile strain germanium msm photodetector and method for making the same
  • Tensile strain germanium msm photodetector and method for making the same
  • Tensile strain germanium msm photodetector and method for making the same

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Embodiment 1

[0071] The present invention provides a method for fabricating a tensile strain germanium MSM photodetector, which at least includes the following steps:

[0072] Step S1: providing a substrate, and sequentially forming a sacrificial layer and a germanium layer on the substrate;

[0073] Step S2: forming a metal layer on the germanium layer, and the metal layer provides stress to the germanium layer;

[0074] Step S3: patterning the metal layer to form a pair of metal main bases and at least a pair of metal sub-bases connected to the pair of metal main bases;

[0075] Step S4 : patterning the germanium layer to form a germanium main pedestal and a germanium sub-susceptor under the metal main susceptor and the metal sub-susceptor, respectively, and at least one strip is formed between each pair of germanium sub-susceptors germanium bridge wire;

[0076] Step S5: Etching away the sacrificial layer under the germanium bridge line and under the germanium submount, so that the ge...

Embodiment 2

[0093] This embodiment adopts basically the same technical solution as the first embodiment, and the difference lies in that, in this embodiment, metal wires connected to the metal submount are respectively formed above both ends of the germanium bridge wire.

[0094] see Figure 7 , which is shown as a top view of the structure in which metal lines 43 connected to the metal submount 42 are respectively formed above both ends of the germanium bridge line 33 . The metal lines 43 are formed simultaneously with the metal main pedestal 41 and the metal sub-mount 42 during the patterning process of the metal layer 4 . The width of the metal line is preferably equal to the width of the germanium bridge line.

[0095] Forming the metal wires 43 above both ends of the germanium bridge wire 33 can further reduce the shear force on the germanium bridge wire during the film deformation process, protect the germanium bridge wire from breaking, improve the stability of the MSM photodetect...

Embodiment 3

[0097] This embodiment adopts basically the same solution as the first embodiment or the second embodiment, the difference is that the uniaxial stress tensile strain germanium is formed in the first embodiment and the second embodiment, while the biaxial stress tensile strain can be formed in this embodiment. The strained germanium can be realized only by changing the pattern of the metal layer 4 and the germanium layer 3 during the patterning process.

[0098] Specifically, in the step S3, the metal layer is patterned to form two pairs of horizontal and vertical metal main bases, and a pair of metal sub-bases is connected between each pair of metal main bases; In step S4, two germanium bridge lines that are vertically connected are formed between the two pairs of germanium submounts; and in the step S5, after etching, the connection of the two germanium bridge lines is in both the lateral and vertical directions stretched to form biaxially stressed tensile strain germanium. ...

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Abstract

The invention provides a tensile strained germanium MSM photoelectric detector and the manufacturing method thereof. The method at least comprises the steps that S1, a substrate is provided and a sacrificial layer and a germanium layer are formed on the substrate in sequence; S2, a metal layer is formed on the germanium layer, and the metal layer provides stress for the germanium layer; S3, the metal layer is patterned and a pair of metal main bases and a pair of metal sub-bases are formed; S4, the germanium layer is patterned and germanium main bases and germanium sub-bases are formed below the metal main bases and the metal sub-bases respectively, and at least one germanium bridge seam is formed between each pair of germanium sub-bases; S5, the portions, below the germanium bridge seams and below the germanium sub-bases, of the sacrificial layer are etched off so that the germanium bridge seams and the germanium sub-bases are suspended in the air, the suspended germanium sub-bases are curved under the action of the action of the metal layer to enable the germanium bridge seams to be stretched, and then the tensile strained germanium MSM photoelectric detector is obtained. According to the tensile strained germanium MSM photoelectric detector and the manufacturing method thereof, the photoelectric detection property of the MSM photoelectric detector can be improved.

Description

technical field [0001] The invention belongs to the field of optoelectronic devices, and relates to a tensile strain germanium MSM photodetector and a manufacturing method thereof. Background technique [0002] Metal-semiconductor-metal photodetector (MSM-PD) has the advantages of fast response speed, small capacitance, simple process, planar structure and easy integration, etc. It has a wide range of applications in optical fiber communication. Since the structure of the MSM detector is two back-to-back diodes, one diode is always reverse biased during operation. Therefore, the intrinsic capacitance of the device is small and does not change much with voltage. At the same time, the MSM detector is a metal-semiconductor structure device, which has no minority carrier effect, small series resistance, and small RC time constant. Its speed mainly depends on the transit time of the generated carriers between the two electrodes (that is, inversely proportional to the electrode s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/108H01L31/0352H01L31/0216
CPCH01L31/0352H01L31/1085H01L31/1808Y02P70/50
Inventor 狄增峰母志强郭庆磊叶林陈达张苗王曦
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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