3-5[mu]m infrared band avalanche photodiode detector and production method thereof

Abstract

The invention provides a 3-5[mu]m infrared band avalanche photodiode detector (APD) and a production method thereof. The infrared band APD comprises an antireflective film layer, a P+ type InSb electrode contact layer, an N type InSb layer, a P type epitaxial Si layer and an N+ type Si layer which are stacked from top to bottom, wherein the N type InSb layer is taken as an absorption layer, the Ptype epitaxial Si layer is taken as a multiplication layer, and the N type InSb layer and the P type epitaxial Si layer are an N type InSb layer and a P type epitaxial Si layer in an InSb / Si bonded wafer respectively. Therefore, absorption of InSb on infrared band lights is high, difference between electron ionization rate and hole ionization rate of an epitaxial Si material is relatively large, an excess noise factor of the epitaxial Si material is small, and multiplication performance with lower noise can be obtained; compared with the circumstance that the multiplication layer is InSb, noise of an InSb / Si APD device can be lowered, responsibility of an APD detector is improved, and high-speed and low-noise photoelectric detection effect can be realized by virtue of combination of the Ntype InSb layer as a relatively narrow absorption layer and the P type epitaxial Si layer as a narrow multiplication layer; meanwhile, the InSb / Si bonding wafer is used, so that thermal mismatch witha Si reading circuit is reduced.

Description

Technical field [0001] The invention belongs to the field of semiconductor optoelectronics, and specifically relates to a 3 to 5 μm infrared wave band avalanche photodiode detector and a manufacturing method thereof, in particular to a 3 to 5 μm infrared wave band avalanche photodiode detector with high response speed and low noise and a manufacturing method thereof . Background technique [0002] The infrared focal plane array (IRFPA) detector combines radiation sensitivity, charge storage and multiplexing functions. It is a second-generation infrared thermal imaging system that is located in the focal plane of the optical system and has signal processing capabilities. It is widely used in infrared guidance, tracking, staring imaging and other weapon equipment. For example, the 2048×2048 InSb infrared focal plane array detector has excellent mass production and is widely used in foreign technical practice. However, in recent years, in the development of the third-generation inf...

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Problems solved by technology

However, the current results also show that the existing bonding methods of InSb FPA detectors and Si substrates are complex in process and low in practicability

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