2D ga1- x in x se alloy and its preparation method and its application in the preparation of photoelectric detection

A photodetector and alloy technology, applied in selenium/tellurium compounds, chemical instruments and methods, circuits, etc., can solve the problems of low photodetection performance and small detection range, and achieve wide photoresponse range, good stability, good The effect of photodetection performance

Inactive Publication Date: 2020-06-05
NORTHEAST FORESTRY UNIVERSITY
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Problems solved by technology

[0004] The present invention provides a two-dimensional GaSe photodetector to solve the problems of low photodetection performance and small detection range of the existing two-dimensional GaSe photodetector. 1-x In x Se alloy and its preparation method and its application in the preparation of photoelectric detection

Method used

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  • 2D ga1- <sub>x</sub> in <sub>x</sub> se alloy and its preparation method and its application in the preparation of photoelectric detection
  • 2D ga1- <sub>x</sub> in <sub>x</sub> se alloy and its preparation method and its application in the preparation of photoelectric detection
  • 2D ga1- <sub>x</sub> in <sub>x</sub> se alloy and its preparation method and its application in the preparation of photoelectric detection

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Embodiment 1 2

[0040] Example 1 Two-dimensional Ga 1-x In x Preparation of Se alloy

[0041] Step 1. Put 338mg of selenium powder and 300mg of indium-gallium eutectic alloy into the quartz boat, then put the quartz boat into the tube furnace and evacuate the tube furnace to 60Torr, and feed 20sccmAr, and keep the furnace temperature at 15 minutes Raise to 300°C and keep for 60 minutes; raise the temperature to 960°C in 33 minutes and keep for 120 minutes; cool down to room temperature in 19 minutes to prepare bulk Ga 1-x In x Se alloy material;

[0042] Step two, the 300nmSiO 2 Immerse the / Si substrate in a mixture of concentrated sulfuric acid-hydrogen peroxide (volume ratio: 3:1) at 83°C for 30 minutes, and then use isopropanol, acetone, ethanol, and ultrapure water for 10KHz ultrasonic treatment, and the ultrasonic treatment time is 10 minutes, blow dry with nitrogen, and set aside;

[0043] Step 3: Use Scotch single-sided transparent tape to repeatedly paste the block Ga 1-x In ...

Embodiment 2 2

[0044] Embodiment 2 two-dimensional Ga 1-x In x Fabrication of Se Alloy Electric Detectors

[0045] Select the 300nmSiO prepared in Example 1 2 2D Ga with a lateral dimension of 40 μm and a thickness of 8 nm on the surface of Si 1-x In x Se alloy, covered with two-dimensional Ga by fixing copper mask plate with silver glue 1-x In x The center position of the Se alloy, leaving two-dimensional Ga on both sides 1-x In x The Se alloy has a width of 3 μm, and then placed in a vacuum coating machine at a vacuum degree of 2×10 -4 Under the condition of Pa, in two-dimensional Ga 1-x In x On one side of the Se alloy, 5nm metal chromium and 40nm metal gold electrodes are sequentially evaporated to obtain a two-dimensional Ga 1-x In x Se alloy photodetector.

Embodiment 3 2

[0046] Embodiment 3 two-dimensional Ga 1-x In x Preparation of Se alloy

[0047] Step 1. Put 338mg of selenium powder and 300mg of indium-gallium eutectic alloy into the quartz boat, then put the quartz boat into the tube furnace and evacuate the tube furnace to 50Torr, and feed 30sccmAr, and keep the furnace temperature at 8 minutes Raise to 300°C and keep for 90 minutes; raise the temperature to 960°C for 20 minutes and keep for 140 minutes; cool down to room temperature for 15 minutes to prepare bulk Ga 1-x In x Se alloy material;

[0048] Step two, the 300nmSiO 2 Immerse the / Si substrate in a mixture of concentrated sulfuric acid-hydrogen peroxide (volume ratio: 3:1) at 83°C for 30 minutes, and then use isopropanol, acetone, ethanol, and ultrapure water for 20KHz ultrasonic treatment, and the ultrasonic treatment time is 15 minutes, blow dry with nitrogen, and set aside;

[0049] Step 3: Use Scotch single-sided transparent tape to repeatedly paste the block Ga 1-x ...

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Abstract

The invention discloses a two-dimensional Ca<1-x>InxSe alloy, a preparation method thereof and an application in the preparation of photoelectric detection, and belongs to the field of material preparation technologies and high-performance visible-near infrared photoelectric detectors. The preparation method of the alloy comprises the steps of putting selenium powder and an indium-gallium eutecticalloy into a quartz boat, vacuumizing, carrying out heat preservation after heating, and cooling to obtain a bulk alloy material; carrying out preprocessing on an SiO2 / Si substrate; bonding the bulkalloy material by a transparent adhesive tape, then pasting the transparent adhesive tape on the processed substrate, soaking the substrate in acetone, and taking out the substrate to obtain the randomly distributed two-dimensional Ca<1-x>InxSe alloy on the surface. The prepared two-dimensional alloy is used for preparing a photoelectric detector. The current is significantly increased under visible-near infrared light irradiation. The alloy has excellent photoelectric detection performance, and the optical response value (strain coefficient) reaches up to 258A / W which is 92 times of the optical response value of GaSe.

Description

technical field [0001] The invention belongs to the field of material preparation technology and high-performance visible-near-infrared photodetector; specifically relates to two-dimensional Ga 1-x In x Se alloy and its preparation method and application in the preparation of photodetectors. Background technique [0002] Two-dimensional GaSe is a good nonlinear optical material, and has good application prospects in the field of new generation nano-optoelectronic devices. However, due to the large indirect bandgap structure of GaSe, the photoresponse value of the current two-dimensional GaSe is low and the photodetection range is small. [0003] In order to expand the application range of semiconductor materials, alloy engineering is a means to effectively control the energy band structure and optoelectronic properties of semiconductor materials. At present, energy band engineering has been widely used in three-dimensional bulk materials, zero-dimensional and one-dimensio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0328C01B19/00
CPCC01B19/007H01L31/0328
Inventor 冯伟于苗苗秦芳璐刘赫
Owner NORTHEAST FORESTRY UNIVERSITY
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