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Vertical photoelectric detector based on independent tin disulfide nanosheets and manufacturing method

A technology of photodetectors and tin disulfide, applied in the field of photodetectors, can solve the problems of serious reflection of incident light, complex electrical contact problems, limited light absorption capacity, etc., to achieve increased light absorption, good electrical contact, and good repeatability Effect

Inactive Publication Date: 2017-09-01
HARBIN INST OF TECH
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, this two-dimensional ultra-thin photodetector with a planar structure has obvious shortcomings and deficiencies (G. Fiori et al., Nat Nanotechnol, 2014, 9, 768-779): (1) Due to the large contact area with the metal electrode, the electrical contact The problem is complicated, and it is easy to cause leakage current; (2) It is seriously affected by the substrate, and it is easy to cause doping and scattering; (3) The light absorption ability is limited, and the reflection of incident light is serious

Method used

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  • Vertical photoelectric detector based on independent tin disulfide nanosheets and manufacturing method
  • Vertical photoelectric detector based on independent tin disulfide nanosheets and manufacturing method
  • Vertical photoelectric detector based on independent tin disulfide nanosheets and manufacturing method

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Embodiment 1

[0036] Such as figure 1 Shown, this specific embodiment adopts following technical scheme: it comprises gold electrode 1, PMMA insulation layer 2, vertical tin disulfide nanosheet 3 and conductive substrate FTO glass 4; figure 1 The middle gold electrode is the positive electrode, the FTO glass 4 is the negative electrode, the vertical tin disulfide nanosheet 3 is the photoelectric conversion core unit, and the PMMA insulating layer 2 covers the middle tin disulfide nanosheet, and isolates the upper and lower electrodes to prevent short circuit.

[0037] Such as figure 2 As shown, using the chemical vapor deposition process, when the growth temperature is ~450 ° C and the growth time is 5 min, free-standing vertical tin disulfide nanosheets can be grown on the FTO substrate.

[0038] Such as image 3 As shown, the grown FTO substrate ( image 3 b) Spin-coat a layer of PMMA on the top to completely coat the vertical tin disulfide nanosheets, wherein the spin-coating paramet...

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Abstract

The invention discloses a manufacturing method of a vertical photoelectric detector based on independent tin disulfide nanosheets, and relates to the technical field of photoelectric detectors. The manufacturing method comprises the following steps: I, preparing independent tin disulfide nanosheets which are arranged vertically on a conductive substrate; II, rotationally coating the tin disulfide nanosheets with a transparent insulating layer, and drying in order to encapsulate the tin disulfide nanosheets; III, etching to remove a part of the transparent insulating layer with a plasma etching process in order to expose a part of the tin disulfide nanosheets again; IV, evaporating a layer of transparent metal electrode to obtain a device. A manufacturing process of the vertical photoelectric detector is easy to implement, and the use of a complex and complicated photoetching technology is avoided; compared with a conventional photoelectric detection being of a parallel structure, the vertical photoelectric detector based on the independent tin disulfide nanosheets has the advantages that scattering and doping caused by the substrate are avoided, and light absorption is increased, so that the photoelectric detection performance of the vertical photoelectric detector is improved.

Description

[0001] Technical field: [0002] The invention relates to a vertical photodetector based on independent tin disulfide nanosheets and a preparation method thereof, belonging to the technical field of photodetectors. [0003] Background technique: [0004] Photodetector is a kind of photoelectric detection device made by using the principle of photoelectric effect of semiconductor materials, which is widely used in various fields of military and national economy. In recent years, two-dimensional semiconductor nanomaterials have become ideal candidates for the preparation of high-performance optoelectronic devices due to their large specific surface area, unique electronic structure and optoelectronic properties, and have received extensive attention and research. At present, photodetectors based on two-dimensional semiconductor nanomaterials are mainly planar structures (Q.H.Wang et al., Nat Nanotechnol, 2012, 7, 699-712; D.Jariwala et al., ACS Nano, 2014, 8, 1102-1120). Thanks...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0352H01L31/09
CPCH01L31/035209H01L31/035227H01L31/09H01L31/18Y02P70/50
Inventor 胡平安刘光波李中华陈晓爽郑威冯伟戴明金
Owner HARBIN INST OF TECH
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