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N-type Bi-Te-Se-based thermoelectric thin film and preparation method thereof

A bi-te-se, thermoelectric thin film technology, applied in the manufacture/processing of thermoelectric devices, junction lead-out materials of thermoelectric devices, vacuum evaporation coating, etc. Loss and other problems, to achieve the effect of good thermoelectric performance, good quality and good repeatability

Pending Publication Date: 2022-02-18
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide an N-type Bi-Te-Se based thermoelectric thin film and its preparation method, aiming at solving the problem that the existing Bi-Te-Se based thin film will have Te And the loss of Se, resulting in compositional deviation, thus affecting the thermoelectric performance of the material

Method used

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  • N-type Bi-Te-Se-based thermoelectric thin film and preparation method thereof
  • N-type Bi-Te-Se-based thermoelectric thin film and preparation method thereof
  • N-type Bi-Te-Se-based thermoelectric thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] Based on 2cm×2cm glass, with Bi 2 Te 3 The target material is magnetron sputtering, and the magnetron sputtering parameters are set as follows: the power is 30W, and a Bi with a thickness of 900nm is prepared on the glass substrate. 2 Te 3 film.

[0056] Using 2cm×2cm glass as the substrate and Se powder as the Se source for thermal evaporation, the parameters of thermal evaporation are set as follows: the evaporation current is 20A, the mass of Se powder is 0.05g, and a Se film with a thickness of 40nm is prepared on the glass substrate .

[0057] Bi on the glass substrate 2 Te 3 The thin film and the Se thin film on the glass substrate are set face to face (the inner side is Bi 2 Te 3 Thin film and Se thin film, two glass substrates on the outside, specifically as figure 2 shown in (c)), and seal the gap between the two outer glass substrates with a sealant, wrap it with aluminum foil, and heat treat it at a temperature of 300°C for 40min to obtain an N-type ...

Embodiment 2

[0059] Bi 2 Te 3 The preparation of the film is the same as in Example 1.

[0060] Using 2cm×2cm glass as the substrate and Se powder as the Se source for thermal evaporation, the parameters of thermal evaporation are set as follows: the evaporation current is 20A, the mass of Se powder is 0.1g, and a Se film with a thickness of 80nm is prepared on the glass substrate .

[0061] Bi on the glass substrate 2 Te 3 The thin film and the Se thin film on the glass substrate are set face to face (the inner side is Bi 2 Te 3 Thin film and Se thin film, two glass substrates on the outside, specifically as figure 2 shown in (c)), and seal the gap between the two outer glass substrates with a sealant, wrap it with aluminum foil, and heat treat it at a temperature of 325°C for 40min to obtain an N-type Bi-Te-Se-based thermoelectric film. Denoted as BT-80Se.

Embodiment 3

[0063] Bi 2 Te 3 The preparation of the film is the same as in Example 1.

[0064] The 2cm×2cm glass is used as the substrate, and Se powder is used as the Se source for thermal evaporation. The parameters of the thermal evaporation current are set as follows: the evaporation current is 20A, the mass of Se powder is 0.15g, and Se powder with a thickness of 130nm is prepared on the glass substrate. film.

[0065] Bi on the glass substrate 2 Te 3 The thin film and the Se thin film on the glass substrate are set face to face (the inner side is Bi 2 Te 3 Thin film and Se thin film, two glass substrates on the outside, such as figure 2 shown in (c)), and seal the gap between the two outer glass substrates with a sealant, wrap it with aluminum foil, and heat treat it at a temperature of 325°C for 40min to obtain an N-type Bi-Te-Se-based thermoelectric film. Denoted as BT-130Se.

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Abstract

The invention discloses an N-type Bi-Te-Se-based thermoelectric thin film and a preparation method thereof, and the preparation method comprises the steps: preparing a Bi2Tey thin film through a magnetron sputtering method, wherein y is greater than or equal to 2.5 and less than or equal to 3.5; preparing a Se thin film through a thermal evaporation method; arranging the Bi2Tey thin film and the Se thin film in an attached mode and performing heat treatment, so Se in the Se thin film is sublimated and diffused into the Bi2Tey thin film, and the N-type Bi-Te-Se-based thermoelectric thin film is obtained. The Bi2Tey thin film prepared through the magnetron sputtering method is good in quality and uniform in component, the Se thin film with the lower density is prepared through the thermal evaporation method, and subsequent sublimation and diffusion are better facilitated. According to the preparation method, uniform doping of Se is realized through cooperative use of a magnetron sputtering method and a thermal evaporation method, Se doping and thermal treatment are carried out at the same time, loss of Te and Se is avoided, no defect is generated, and the N-type Bi-Te-Se-based thermoelectric thin film with controllable and uniform components and high electrical transport performance is prepared. The N-type Bi-Te-Se-based thermoelectric thin film is high in quality, good in thermoelectric performance, good in repeatability and capable of being produced in a large area.

Description

technical field [0001] The invention relates to the field of thermoelectric materials, in particular to an N-type Bi-Te-Se-based thermoelectric thin film and a preparation method thereof. Background technique [0002] Thermoelectric materials can realize direct mutual conversion of thermal energy and electric energy. Thermoelectric devices made of thermoelectric materials have the advantages of no pollution, long life, less maintenance, and no noise. They are widely used in thermoelectric power generation and thermoelectric refrigeration. Compared with bulk materials, low-dimensional thermoelectric thin films have more interfaces, which can enhance material phonon scattering to obtain low thermal conductivity and high thermoelectric figure of merit. As the best thermoelectric material at room temperature, Bi 2 Te 3 The study of base films is a hot spot in the field of thermoelectricity. The performance of the currently reported P-type bismuth telluride thin films has reac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/34H01L35/16C23C14/06C23C14/24C23C14/35C23C14/58H10N10/01H10N10/852
CPCC23C14/35C23C14/0623C23C14/06C23C14/24C23C14/5806H10N10/852H10N10/01
Inventor 陈跃星郑壮豪何著臣李甫张君泽
Owner SHENZHEN UNIV
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