Two-dimensional material heterojunction photoelectric detector with surface plasmon and preparation method thereof

Abstract

The invention relates to a tungsten diselenide / molybdenum disulfide heterojunction photoelectric detector with surface plasmon and a preparation method of the tungsten diselenide / molybdenum disulfide heterojunction photoelectric detector. The tungsten diselenide / molybdenum disulfide heterojunction photoelectric detector comprises an ITO electrode, a heterojunction and gold nanoparticles, wherein the heterojunction is formed by combining two-dimensional tungsten diselenide and molybdenum disulfide through Van der Waals force and by introducing the surface plasmon. According to the photoelectric detector provided by the invention, the light absorption and the light response of the two-dimensional tungsten diselenide / molybdenum disulfide heterojunction are enhanced by utilizing the absorption effect of surface plasmons on photon energy. The preparation method provided by the invention comprises the following steps: accurately etching a window with a submicro-size specific pattern, such as a rectangle or a circle, on photoresist in a heterojunction region through a laser direct writing photoetching technology, and dropwise adding a nano-particle solution, such as a gold nano-particle solution or a silver nano-particle solution, in a window region by using a pipettor; introducing the surface plasmon on the heterojunction region in a manner of enriching the gold nanoparticles in a rectangular window in a vibration and heating environment. The structure of the two-dimensional material heterojunction photoelectric detector with the surface plasmon and the preparation method of the two-dimensional material heterojunction photoelectric detector have the advantages of being novel and simple.

Description

technical field [0001] The invention belongs to the technical field of optical communication, and in particular relates to a photoelectric detector. Background technique [0002] A photodetector is a device that converts optical signals into electrical signals, and it plays a very important role in the fields of optical communication, remote sensing systems, and video imaging. Traditional photodetectors are based on silicon materials, but since silicon is an indirect bandgap semiconductor with a forbidden band width of only about 1.1eV, the detection range of this type of photodetector can only range from visible light to near-infrared light, and the light absorption efficiency low. The two-dimensional semiconductor materials emerging in recent years can overcome the limitation of silicon materials. Such materials usually have atomic-scale thickness and exhibit good optoelectronic properties, so they have received extensive attention in the fabrication of micro-nano optoele...

AI Technical Summary

Problems solved by technology

However, due to the atomic-level thickness and transparent properties, light easily passes through two-dimensional materials without being absorbed, so two-dimensional materials face the problem of low light absorption rate.

Images