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A kind of organic field effect transistor memory with self-blocking layer structure and preparation method thereof

A technology of organic field and barrier layer, which is applied in the field of organic field effect transistor memory and its preparation, can solve the problems of limited source of materials, low data stability, slow photoresponse speed, etc., and achieve improved storage performance and photosensitive performance, high Storage density, the effect of increasing storage density

Active Publication Date: 2019-06-21
NANJING UNIV OF POSTS & TELECOMM
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The technical problem to be solved: the present invention mainly proposes an organic field effect transistor memory with a self-blocking layer structure and its preparation method, which solves the problems in the prior art that the source of materials is not wide, the operating voltage is high, the photoresponse speed is low, and the storage density is low. Technical issues such as low and low data stability

Method used

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  • A kind of organic field effect transistor memory with self-blocking layer structure and preparation method thereof
  • A kind of organic field effect transistor memory with self-blocking layer structure and preparation method thereof
  • A kind of organic field effect transistor memory with self-blocking layer structure and preparation method thereof

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Embodiment 1

[0033] Such as Figure 1-9 As shown, the first step: at 25°C, prepare polystyrene PS solution with a solution concentration of 5 mg / ml, and let it stand for 12 h in a solution where the solvent is toluene to make it evenly dispersed;

[0034] Step 2: Prepare polyvinylcarbazole PVK solution with a solution concentration of 5 mg / ml, and let it stand in a solution where the solvent is toluene for 2 hours to make it evenly dispersed;

[0035] The third step: Dope the prepared PS solution and PVK solution according to the volume ratio of 1:1, 5:1, 10:1 and 1:0 respectively;

[0036] The fourth step: sequentially form a gate electrode and a gate insulating layer 4 on the substrate 5, the thickness of the gate insulating layer 4 is 300 nm, and make a substrate, and the substrate is ultrasonically cleaned with acetone, ethanol, and deionized water for 10 minutes in sequence, The ultrasonic frequency is 100 KHz, and then the liquid on the surface of the substrate is blown dry with hig...

Embodiment 2

[0051] Step 1: Prepare polymethyl methacrylate PMMA solution at 25°C with a solution concentration of 5 mg / ml, and let it stand in a solution with toluene as the solvent for 12 h to make it evenly dispersed;

[0052] Step 2: Prepare polyvinylcarbazole PVK solution with a solution concentration of 5 mg / ml, and let it stand in a solution where the solvent is toluene for 2 hours to make it evenly dispersed;

[0053] The third step: Dope the configured PMMA solution and PVK solution according to the volume ratio of 1:1, 5:1, 10:1 and 1:0 respectively;

[0054] The fourth step: sequentially form a gate electrode and a gate insulating layer 4 on the substrate 5, the thickness of the gate insulating layer 4 is 300 nm, and make a substrate, and the substrate is ultrasonically cleaned with acetone, ethanol, and deionized water for 10 minutes in sequence, The ultrasonic frequency is 100 KHz, and then the liquid on the surface of the substrate is blown dry with high-purity nitrogen to en...

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Abstract

The present invention discloses an airport effect crystal storage memory with a self -blocking layer structure. From top to bottom is the source leakage electrode, organic optics semiconductor layer, grid insignificant layer, and substrate.There is a mixed polymer self -blocking film layer; the present invention improves the storage performance of the device through simple process, so that the storage capacity, switching speed and tolerance have been greatly improved;application.

Description

technical field [0001] The invention belongs to the technical field of memory in the semiconductor industry, and in particular relates to an organic field effect transistor memory with a self-blocking layer structure and a preparation method thereof. Background technique [0002] As a basic component in electronic circuits, organic field-effect transistors are very suitable for the development direction of the next generation of wearable electronics industry because of their wide source of materials, lightness, and simple processing technology, and can be applied to large-area printing processes. At the same time, the structure of the organic field effect transistor determines that it has a wealth of functional applications, such as light emission, storage, sensing, switching, etc., so it has broad application prospects in the field of information electronics. [0003] In the charge transport layer there is a class of insulating materials that can permanently store charges. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/48B82Y30/00
CPCB82Y30/00H10K71/12H10K30/65H10K30/81Y02E10/549
Inventor 仪明东李焕群凌海峰解令海包岩宋子忆黄维
Owner NANJING UNIV OF POSTS & TELECOMM
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