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Photoelectric conversion element and method for manufacturing same

A technology of photoelectric conversion elements and manufacturing methods, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, photovoltaic power generation, etc., can solve the problems of weak current flow and lower precision, and achieve the effect of improving the specific detection rate

Pending Publication Date: 2020-06-05
SUMITOMO CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, a weak current flows through the photoelectric conversion element even when no light is incident on it.
This current is known as dark current, and is the main factor that reduces the accuracy of light detection.

Method used

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  • Photoelectric conversion element and method for manufacturing same
  • Photoelectric conversion element and method for manufacturing same
  • Photoelectric conversion element and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0283] (preparation of ink)

[0284] Inks can be prepared by known methods. For example, it can be prepared by the following method: mixing the first solvent and the second solvent to prepare a mixed solvent, adding a p-type semiconductor material and an n-type semiconductor material to the mixed solvent; adding a p-type semiconductor material to the first solvent , a method of adding an n-type semiconductor material to a second solvent, and then mixing the first solvent and the second solvent to which each material is added; and the like.

[0285] The first solvent and the second solvent, and the p-type semiconductor material and n-type semiconductor material can be mixed by heating at a temperature not higher than the boiling point of the solvent.

[0286] After mixing the first solvent and the second solvent, and the p-type semiconductor material and n-type semiconductor material, the resulting mixture can be filtered using a filter, and the obtained filtrate can be used a...

Embodiment 1

[0301] (Production and evaluation of photoelectric conversion elements)

[0302] A glass substrate on which an ITO thin film (anode) was formed to a thickness of 150 nm by a sputtering method was prepared, and ozone UV treatment was performed on this glass substrate as a surface treatment.

[0303] Next, poly(3,4-ethylenedioxythiophene) and polystyrene sulfonic acid (PEDOT / PSS) were dissolved in water, and the resulting suspension (Clevios P ​​VP AI4083, manufactured by Heraeus) was prepared using a pore size of 0.45 μm filter for filtration. The filtered suspension was applied to a thin film of ITO on a glass substrate with a thickness of 40 nm by a spin coating method to form a coating film.

[0304] Next, the glass substrate on which the coating film was formed was dried at 200° C. for 10 minutes using a hot plate in the atmosphere to form a hole transport layer.

[0305] Next, polymer P-1 and C60PCBM (manufactured by Frontier Carbon, trade name: E100) were mixed at a weigh...

Embodiment 2～4 and comparative example 1～5

[0317] Except for changing the thickness of the active layer as shown in Table 3 below, a photoelectric conversion element (photodetection element) was fabricated in the same manner as in Example 1 described above, and evaluated in the same manner as in Example 1. The results are shown in Table 3.

[0318] [table 3]

[0319]

[0320] D* of the photoelectric conversion elements of Examples 1 to 4 was higher than that of the photoelectric conversion elements of Comparative Examples 1 to 5 in which the absorption peak wavelength of the p-type semiconductor material was less than 800 nm and the thickness condition of the active layer was not satisfied.

[0321] That is, EQE generally has a tendency to decrease as the absorption peak wavelength of the p-type semiconductor material increases, but according to the photoelectric conversion elements of Examples 1 to 4, by making the thickness of the active layer 350nm to 500nm, making the p-type semiconductor material The absorptio...

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Abstract

The purpose of the present invention is to improve ratio detectability. A photoelectric conversion element (10) includes a positive electrode (12), a negative electrode (16), and an active layer (14)provided between the positive electrode and the negative electrode, wherein the active layer includes an n-type semiconductor material and a p-type semiconductor material which is a polymer compound having an absorption peak wavelength of 800 nm or higher, and the thickness of the active layer is 300 nm to less than 600 nm.

Description

technical field [0001] The present invention relates to a photoelectric conversion element such as a photodetection element and a manufacturing method thereof. Background technique [0002] Photoelectric conversion elements are extremely useful devices from the viewpoint of, for example, saving energy and reducing carbon dioxide emissions, and are attracting attention. [0003] A photoelectric conversion element is an element including at least a pair of electrodes including an anode and a cathode, and an active layer provided between the pair of electrodes. In the photoelectric conversion element, either electrode is made of a transparent or semitransparent material, and light is incident on the organic active layer from the side of the transparent or semitransparent electrode. Charges (holes and electrons) are generated in the organic active layer by the energy (hν) of light incident on the organic active layer, and the generated holes move to the anode and the electrons ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L31/10H01L51/44
CPCH01L31/10Y02E10/549Y02P70/50G06V40/1318H10K39/32H10K71/12H10K85/113H10K85/215H10K85/151H10K30/30G06V40/1365H10K30/82H10K71/15H10K71/441H10K85/111H10K85/1135
Inventor 古川大祐猪口大辅
Owner SUMITOMO CHEM CO LTD
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