A kind of Gan base enhanced field effect device and its manufacturing method

Abstract

The invention provides a GaN-based enhanced field effect device and a manufacturing method thereof. The GaN-based enhanced field effect device comprises an active region and an isolation region surrounded by the active region, wherein the active region comprises a single crystal substrate, a buffer layer, a channel layer, a barrier layer, an interface control layer, a source metal electrode, a drain metal electrode, a grid metal electrode and a dielectric passivation layer and further comprises a P-type two-dimensional material grid; the P-type two-dimensional material grid is inserted below the grid metal electrode, so the two-dimensional electron gas in the channel below the grid can be effectively depleted, and the GaN-based enhanced field effect device is realized. The P-type two-dimensional material is advantaged in that cavity concentration is high, crystal lattice matching and a low interface state are realized, selective removal from the surface of a gallium nitride material can be realized, and process controllability is good, so threshold consistency of the acquired GaN-based enhanced field effect device is good, and a reliability problem caused by current collapse is well suppressed.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor devices, in particular to a GaN-based enhanced field effect device and a manufacturing method thereof. Background technique [0002] GaN materials have the characteristics of large band gap, high critical breakdown electric field, and high thermal conductivity, and have broad application prospects in broadband communications, power electronics, and other fields. Due to the spontaneous polarization and piezoelectric polarization effects at the interface between gallium nitride (GaN) and aluminum gallium nitride (AlGaN) heterojunction, the two-dimensional electron gas concentration is very high (>1E13cm -2 ), which makes GaN field effect devices, that is, HEMT (High Electron Mobility Transistor, high electron mobility transistor) devices, have very low on-resistance and switching delay. However, the high concentration of two-dimensional electron gas at the AlGaN / GaN heterointerface mak...

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Problems solved by technology

[0005] In view of this, the present invention provides a GaN-based enhancement type field effect device and its manufacturing method to solve the problem of barrier layer caused by dry etching when growing a single-layer p-GaN capping layer on the gate in the prior art. The problem of surface damage

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