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A light-emitting diode epitaxial wafer and its preparation method

A technology of light-emitting diodes and epitaxial wafers, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of P-type semiconductor layer affecting the expansion of holes, achieve forward voltage reduction, enhance antistatic ability, antistatic ability strong effect

Active Publication Date: 2021-06-11
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The embodiment of the present invention provides a light-emitting diode epitaxial wafer and its preparation method, which can solve the problem that many defects in the P-type semiconductor layer in the prior art will affect the expansion of holes

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  • A light-emitting diode epitaxial wafer and its preparation method
  • A light-emitting diode epitaxial wafer and its preparation method
  • A light-emitting diode epitaxial wafer and its preparation method

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Embodiment Construction

[0029] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0030] An embodiment of the present invention provides a light emitting diode epitaxial wafer. figure 1 A schematic structural diagram of a light emitting diode epitaxial wafer provided by an embodiment of the present invention. see figure 1 , the light emitting diode epitaxial wafer includes a substrate 10, an electron supply layer 20, an active layer 30 and a hole supply layer 40, and the electron supply layer 20, the active layer 30 and the hole supply layer 40 are sequentially stacked on the substrate 10.

[0031] figure 2 Schematic diagram of the structure of the hole-providing layer provided for the embodiment of the present invention. see figure 2 , in this embodiment, the hole providing layer 40 includes a first sublayer ...

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Abstract

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, belonging to the technical field of semiconductors. The light-emitting diode epitaxial wafer includes a substrate, an electron supply layer, an active layer, and a hole supply layer, and the electron supply layer, the active layer, and the hole supply layer are sequentially stacked on the substrate, The hole supply layer includes a first sublayer and at least one second sublayer inserted in the first sublayer, the material of the first sublayer is gallium nitride doped with magnesium, and the second sublayer is The material of the sublayer is gallium nitride doped with carbon, and the thickness of the first sublayer is greater than 1 / 2 of the thickness of the hole providing layer. In the present invention, at least one carbon-doped gallium nitride layer is inserted into the magnesium-doped gallium nitride layer to realize the plane spreading of holes, reduce the series resistance of the hole-providing layer, and enhance the antistatic ability of the LED.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Gallium nitride (GaN) has good thermal conductivity, and has excellent characteristics such as high temperature resistance, acid and alkali resistance, and high hardness, so that gallium nitride (GaN)-based LEDs have received more and more attention and research. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate. The P-type semiconductor la...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/32H01L33/24H01L33/00
CPCH01L33/0066H01L33/0075H01L33/24H01L33/325
Inventor 郭炳磊王群葛永晖吕蒙普李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
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