Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

GaN-based light-emitting diode epitaxial wafer and manufacturing method thereof

A light-emitting diode, gallium nitride-based technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem that the electron blocking layer affects the expansion of holes, etc., to reduce series resistance, strong antistatic ability, and enhance antistatic effect of ability

Active Publication Date: 2021-10-08
HC SEMITEK ZHEJIANG CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The embodiment of the present invention provides a gallium nitride-based light-emitting diode epitaxial wafer and its manufacturing method, which can solve the problem that more defects in the electron blocking layer in the prior art will affect the expansion of holes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • GaN-based light-emitting diode epitaxial wafer and manufacturing method thereof
  • GaN-based light-emitting diode epitaxial wafer and manufacturing method thereof
  • GaN-based light-emitting diode epitaxial wafer and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0031] An embodiment of the present invention provides a GaN-based light-emitting diode epitaxial wafer. figure 1 A schematic structural diagram of a gallium nitride-based light-emitting diode epitaxial wafer provided by an embodiment of the present invention. see figure 1 , the GaN-based light-emitting diode epitaxial wafer includes a substrate 10, an N-type semiconductor layer 20, an active layer 30, an electron blocking layer 40 and a P-type semiconductor layer 50, an N-type semiconductor layer 20, an active layer 30, an electron blocking layer Layer 40 and P-type semiconductor layer 50 are sequentially stacked on substrate 10 .

[0032] figure 2 Schematic diagram of the structure of the electron blocking layer provided by the e...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method thereof, belonging to the technical field of semiconductors. The GaN-based light-emitting diode epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer, an electron blocking layer, and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer, and the electron blocking layer and the P-type semiconductor layer are sequentially stacked on the substrate, the electron blocking layer includes a first sublayer and at least one second sublayer inserted in the first sublayer, the first sublayer The material of the second sublayer is AlGaN doped with magnesium, the material of the second sublayer is AlGaN doped with carbon, and the thickness of the first sublayer is greater than 1 / 2 of the thickness of the electron blocking layer . The present invention inserts at least one carbon-doped aluminum gallium nitride layer into the magnesium-doped aluminum gallium nitride layer to realize the plane spreading of holes, reduce the series resistance of the electron blocking layer, and enhance the antistatic ability of the LED.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Gallium nitride (GaN) has good thermal conductivity, and has excellent characteristics such as high temperature resistance, acid and alkali resistance, and high hardness, so that gallium nitride (GaN)-based LEDs have received more and more attention and research. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate. The...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/14H01L33/32H01L33/00
CPCH01L33/0075H01L33/145H01L33/32
Inventor 葛永晖郭炳磊曹阳吕蒙普胡加辉李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com