An in-memory computing (IMC) accelerator using a high-density operation circuit and a low-power
sense amplifier as a
peripheral circuit includes a plurality of dynamic random-access memory (
DRAM) banks each including a pair of
cell arrays, a data supply logic, a memory, and a controller for IMC, a global SRAM, and a top-level controller, wherein the
cell array includes a plurality of subarrays, each of the subarrays includes a
DRAM array including a big array and a little array, and an arithmetic circuit configured to perform an operation, and the arithmetic circuit includes a
sense amplifier configured to amplify a
bit line voltage difference, and a compact multiply-accumulate (MAC)-single instruction multiple data (
SIMD) unit (CMSU) for an MAC operation and an
SIMD operation, so that functionality of an in-
memory operation is diversified.