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Method for preparing barium stan-titanate ferroelectric film

A ferroelectric thin film, tetra-n-butyl titanate technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, devices for coating liquid on the surface, special surfaces, etc., can solve the problems of unfavorable mass production and high price problems, to achieve the effect of easy purchase, good performance, and reduced leakage conduction

Inactive Publication Date: 2010-02-03
TONGJI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For the preparation of barium tin titanate ferroelectric thin film by sol-gel method, the raw material used for component tin is usually tin acetate, but the price of this material is very high, which is not conducive to mass production, so it is urgent to find a lower price and use other The prepared barium tin titanate ferroelectric thin film is a raw material with good performance

Method used

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  • Method for preparing barium stan-titanate ferroelectric film
  • Method for preparing barium stan-titanate ferroelectric film
  • Method for preparing barium stan-titanate ferroelectric film

Examples

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Embodiment 1

[0018] Preparation of barium tin titanate Ba(Ti 1-x Sn x )O 3 , X=0.05, 0.1, 0.15, 0.2 and 0.25 ferroelectric thin film.

[0019] The chemical raw material used is barium acetate [Ba(CH 3 COO) 2 ], dibutyltin oxide [(C 4 H 9 ) 2 SnO, purity 98%] and tetra-n-butyl titanate [Ti(OC 4 H 9 ) 4 ], the solvent is glacial acetic acid and ethyl glycol ether. First heat barium acetate and dibutyltin oxide (according to a certain stoichiometric ratio x = 0.05, 0.10, 0.15, 0.2 and 0.25) in glacial acetic acid solution to boiling, stop heating after 10 minutes, and cool to room temperature, Ba The molar ratio of +Sn to glacial acetic acid is 1:10. Then add the mixed solution of tetra-n-butyl titanate, ethyl glycol ether and acetylacetone (AcAc) into the glacial acetic acid solution containing barium and tin, where the molar ratio of Ti to AcAc is 1:2, The molar ratio of n-butyl ester to ethylene glycol ether is 1:10. Finally, glacial acetic acid was added to adjust the concentration of the ...

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Abstract

A process for preparing the non-Pb ferroelectric Ba(Ti, Sn)O3 film features that its Sn source is the Tin dibutyloxide ((CC4H9)2SnO) with low cost and comparable performance, the size of its crystal grain can be regulated in a larger range, and it has low leakage and high voltage resistance.

Description

Technical field [0001] The invention belongs to the technical field of preparation methods of barium tin titanate ferroelectric thin films. Background technique [0002] Barium strontium titanate (Ba, Sr)TiO 3 (BST) Ferroelectric thin films have become a hot spot in international ferroelectric thin film research due to their application in ultra-large integrated scale integrated circuits. However, BST thin films have the defect of large leakage current under low electric fields. As an alternative to BST materials (Ba 1-x Sr x )(Ti 1-y Zr y )O 3 (BSTZ), Ba(Zr, Ti)O 3 (BZT) and Ba(Ti, Sn)O 3 (BTS) and so on. Barium tin titanate Ba(Ti, Sn)O 3 (BTS) Ferroelectric thin film is based on BaTiO 3 (ABO 3 ) The perovskite structure is replaced by the B position. The BTS film has low leakage current and also has good dielectric properties at high frequencies. Therefore, it can be applied to storage capacitors on next-generation DRAMs and MLCC iron Electrical materials and dielectric nonlin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B05D5/12B05D1/00B05D3/02B05C9/08H01L41/22H10N30/093
Inventor 翟继卫宋三年
Owner TONGJI UNIV
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