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La, Er, Co and Mn co-doped BFO film with resistance switching effect and preparation method of film

A resistance switch and effect technology, applied in the field of BFO film and its preparation, can solve the problems of thin film leakage conduction, ferroelectric performance reduction, adverse effects of thin film resistance switching effect, etc., to achieve easy reaction, simple preparation method, and easy preparation process The effect of control

Active Publication Date: 2019-01-04
SHAANXI UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] But BiFeO 3 The volatilization of bismuth element in medium and part of Fe 3+ to Fe 2+ The transformation of the film causes serious leakage conduction phenomenon in the film, which leads to the decrease of ferroelectric performance, which leads to the adverse effect of the film resistive switching effect.

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  • La, Er, Co and Mn co-doped BFO film with resistance switching effect and preparation method of film
  • La, Er, Co and Mn co-doped BFO film with resistance switching effect and preparation method of film
  • La, Er, Co and Mn co-doped BFO film with resistance switching effect and preparation method of film

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preparation example Construction

[0032] The La, Er, Co, Mn co-doped BiFeO 3 The preparation method of film, its step is as follows:

[0033] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, La(NO 3 ) 3 ·nH 2 O, Er(NO 3 ) 3 ·6H 2 O, C 4 h 6 MnO 4 4H 2 O and Co(NO 3 ) 2 ·6H 2 O is dissolved in ethylene glycol methyl ether, after stirring evenly, add acetic anhydride and continue stirring until uniformly to obtain a precursor solution;

[0034] Step 2: Spin-coat the precursor solution on the FTO / Glass substrate to obtain a wet film, bake the wet film at 195-200°C to obtain a dry film, and then rapidly anneal at 500-550°C to obtain crystalline Bi 0.9-x La x Er 0.1 Fe 0.96 co 0.02 mn 0.02 o 3 film;

[0035] Step 3: The crystalline Bi 0.9-x La x Er 0.1 Fe 0.96 co 0.02 mn 0.02 o 3 The film is cooled to room temperature, and step 2 is repeated to obtain a preset thickness of Bi 0.9-x La x Er 0.1 Fe 0.96 co 0.02 mn 0.02 o 3 film.

[0036] In step 1, the total concentration of m...

Embodiment 1

[0047] 1) Bi(NO 3 ) 3 ·5H 2 O, La(NO 3 ) 3 ·nH 2 O, Er(NO 3 ) 3 ·6H 2 O, Fe(NO 3 ) 3 9H 2 O, Co(NO 3 ) 2 ·6H 2 O and C 4 h 6 MnO 4 4H 2 O is dissolved in ethylene glycol methyl ether in a molar ratio of 0.94:0.01:0.1:0.96:0.02:0.02, stirred for 1.5h, then added with acetic anhydride and stirred for 30min to obtain a stable Bi 0.89 La 0.01 Er 0.1 Fe 0.96 co 0.02 mn 0.02 o 3 Precursor solution, the precursor solution was left to stand for 24h; wherein, Bi 0.89 La 0.01 Er 0.1 Fe 0.96 co 0.02 mn 0.02 o 3 The total metal ion concentration in the precursor solution is 0.3mol / L, and the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0048] 2) Spin coating Bi on FTO / Glass substrate by spin coating method 0.89 La 0.01 Er 0.1 Fe 0.96 co 0.02 mn 0.02 o 3 Precursor solution, the mixing speed is 4000r / min, the mixing time is 20s, the wet film is prepared, the wet film is baked at 195°C for 8min to obtain the dry film, and th...

Embodiment 2

[0051] 1) Bi(NO 3 ) 3 ·5H 2 O, La(NO 3 ) 3 ·nH 2 O, Er(NO 3 ) 3 ·6H 2 O, Fe(NO 3 ) 3 9H 2 O, Co(NO 3 ) 2 ·6H 2 O and C 4 h 6 MnO 4 4H 2 O is dissolved in ethylene glycol methyl ether in a molar ratio of 0.92:0.03:0.1:0.96:0.02:0.02, stirred for 1.5h, then added with acetic anhydride and stirred for 30min to obtain a stable Bi 0.87 La 0.03 Er 0.1 Fe 0.96 co 0.02 mn 0.02 o 3 Precursor solution, the precursor solution was left to stand for 24h; wherein, Bi 0.87 La 0.03 Er 0.1 Fe 0.96 co 0.02 mn 0.02 o 3 The total metal ion concentration in the precursor solution is 0.3mol / L, and the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0052] 2) Spin coating Bi on FTO / Glass substrate by spin coating method 0.87 La 0.03 Er 0.1 Fe 0.96 co 0.02 mn 0.02 o 3 Precursor solution, the mixing speed is 4000r / min, the mixing time is 20s, the wet film is prepared, the wet film is baked at 195°C for 8min to obtain the dry film, and th...

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Abstract

The invention discloses a La, Er, Co and Mn co-doped BFO film with a resistance switching effect and a preparation method of the film. The chemical formula of the film is Bi0.9-xLaxEr0.1Fe0.96Co0.02Mn0.02O3, x=0.01-0.09, the film is of a twisted rhombic perovskite structure, a space group is R3c, and the film grows along a (101) direction. The film is prepared by a sol-gel method through a layer-by-layer annealing process, a preparation method is simple, reaction is easy, technology process temperature is low, and a preparation process is easily controlled. According to the A-site rare earth ion and B-site magnetic transition metal ion co-doped BiFeO3 film, a middle transition layer is formed an interface of the film and an electrode film, kinds and quantity of an oxygen vacancy at a BiFeO3 film interface are changed along with mixing of La ions in the BiFeO3 film, and the film has the resistance switching effect.

Description

technical field [0001] The invention belongs to the field of functional materials, and in particular relates to a La, Er, Co, Mn co-doped BFO film with resistance switching effect and a preparation method thereof. Background technique [0002] With the continuous development of information technology, higher requirements are put forward for the miniaturization, multi-function, read and write speed and energy consumption of devices. However, existing technologies and materials have reached their size and performance limits, most notably in data storage. At present, the working principles of most electronic devices such as memories and sensors are based on ferroelectric and ferromagnetic materials. The study found that ferroelectric materials, a large class of materials, not only show attractive application prospects in terms of ferroelectric properties, but also the resistance switching phenomenon observed in them attracts more attention. The multifunctional effect of ferro...

Claims

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Application Information

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IPC IPC(8): C03C17/34
CPCC03C17/3417C03C2217/70C03C2217/94C03C2218/116C03C2218/32
Inventor 谈国强刘云郭美佑薛敏涛任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
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