20 results about "Magnetic transitions" patented technology

The invention discloses a high-adhesion super-hydrophobic protective coating process method and a coating. The high-adhesion super-hydrophobic protective coating process method comprises the following steps: S1, preparing magnetic nano iron oxide particles; s2, performing neodymium modification on the magnetic nano iron oxide particles to obtain ferromagnetic neodymium modified iron oxide; s3, preparing and spraying a neodymium modified iron oxide coating; s4, preparing and coating a negative charge modified polymer microsphere coating; s5, preparing and spraying a positive charge modified polymer microsphere coating; and S6, preparing and spraying a modified nano silicon dioxide super-hydrophobic coating. According to the method, neodymium-modified magnetic nanometer iron oxide serves as a first layer of the surface of a steel substrate and is sprayed and dried in a magnetic field, it is guaranteed that the neodymium-modified magnetic nanometer iron oxide is tightly adsorbed to the steel surface, a magnetic transition layer is formed, and then coatings with different charges are alternately coated through the electrostatic attraction effect; and finally, a high-adhesive-force super-hydrophobic coating is formed on the steel surface in a layer-by-layer self-assembly mode, and the problem that the adhesive force of the super-hydrophobic coating is poor is obviously solved.

The present invention discloses a silicon-carbon negative electrode material modified with a magnetic transition metal oxide and a preparation method thereof, and belongs to the technical field of lithium-ion battery micro-nano materials. The preparation method provided by the present invention has readily available raw materials, low prices, a simple preparation process flow, easy operation, low energy consumption, and environmental friendliness in the preparation process. The prepared silicon-carbon negative electrode material has a uniform and dense modified layer containing a magnetic transition metal oxide, which can effectively improve the conductivity, high specific capacity, and cycle stability of the silicon-carbon negative electrode material. The first coulomb efficiency reaches more than 80%, and the specific capacity can be stabilized to a maximum of 1127mAh / g after 100 cycles, which is much higher than the current average level of this type of material. In addition, the prepared silicon-carbon negative electrode material has excellent mechanical flexibility and can be directly used in the assembly of lithium-ion batteries, and has strong application potential in flexible wearable electronic devices in the future.

The invention discloses an electrochemical method for regulating and controlling the phase, resistance and magnetism of a two-dimensional layered material, and belongs to the field of two-dimensional transition metal chalcogenide. The electrochemical method comprises the steps that an electrode system is provided, the electrode system comprises a working electrode and a counter electrode, the working electrode comprises a two-dimensional layered material, the chemical formula of the two-dimensional layered material is MX2, M represents a transition metal element, and X represents a group VI element where a sulfur element is located; providing an electrolyte, wherein the electrolyte is a soluble salt solution containing magnetic transition metal ions; the electrode system is placed in the electrolyte, and under the action of an external electric field, the magnetic transition metal ions are embedded and separated from the two-dimensional layered material, so that the phase, the resistance and the magnetism of the two-dimensional layered material are synergistically regulated and controlled. According to the technology, magnetic transition metal ions are driven by an electric field to be reversibly embedded into and separated from a two-dimensional layered material, so that the phase, the resistance and the magnetism of the two-dimensional layered material are synergistically and dynamically regulated and controlled, and the problems that the traditional external field regulation and control dimension is single, and intrinsic physical property coupling change is difficult to realize are solved. And multi-physical-property combined regulation and control is realized by adjusting an electric field, so that a basis is provided for application of the material in the fields of photoelectric devices, magnetoelectric storage, sensors and the like.

The application provides a permanent magnet synchronous motor weak magnetic transition area smooth transition method and system based on a reference voltage adaptive reduction, and belongs to the field of permanent magnet synchronous motor control. The method solves the problem of torque fluctuation caused by voltage overshoot in the existing voltage closed-loop weak magnetic control with a fixed reference voltage. The method comprises the following steps: obtaining a theoretical maximum torque according to a preset current limit value by simultaneously solving a torque equation and a current constraint equation; calculating torque ratio parameters and speed ratio parameters in real time; calculating a reference voltage adaptive coefficient based on an adaptive smooth transition algorithm; multiplying the adaptive coefficient by the inscribed circle voltage of an inverter to dynamically adjust the reference value of the voltage closed loop, so that smooth control of the weak magnetic transition area is realized. The method is mainly used in the fields of electric aircrafts, electric vehicles and robots.

The present technology includes semiconductor devices and methods with improved contact resistivity. Semiconductor devices include a substrate base, a silicon oxide disposed on the base defining one or more features, a non-magnetic transition-metal doped contact silicide layer disposed on the substrate in the one or more features, and at least a first metal layer. The non-magnetic transition-metal doped contact silicide layer includes a non-magnetic transition-metal, a first metal, and a silicon containing compound, and includes greater than or about 8.0 E+13 per cm2 non-magnetic transition-metal atoms. The first metal layer includes the first metal and overlies the non-magnetic transition-metal doped contact silicide layer.

The present technology includes semiconductor devices and methods with improved contact resistivity. Semiconductor devices include a substrate base, a silicon oxide disposed on the base defining one or more features, a non-magnetic transition-metal doped contact silicide layer disposed on the substrate in the one or more features, and at least a first metal layer. The non-magnetic transition-metal doped contact silicide layer includes a non-magnetic transition-metal, a first metal, and a silicon containing compound, and includes greater than or about 8.0 E+13 per cm2 non-magnetic transition-metal atoms. The first metal layer includes the first metal and overlies the non-magnetic transition-metal doped contact silicide layer.

The invention discloses a preparation method of a special high-quality LaCoO3-delta single crystal with a magnetic transition property. The preparation method comprises the following steps: performing dewatering sintering on La2O3 powder; putting the pretreated La2O3 powder and Co3O4 powder into a mortar according to a combination reaction ratio, and uniformly grinding; the powder is poured into a customized stainless steel mold and pressed into a sheet shape under the pressure of 1.4 T; placing the flaky sample in a crucible boat, and sintering in a high-temperature furnace at a set temperature of 1050 DEG C for 50 hours; preparing a precursor charge bar, namely uniformly grinding the pressed sample powder which is sintered and cooled to room temperature, putting the pressed sample powder into a latex mold, and carrying out compression molding under high pressure of an isostatic press; sintering the prepared precursor charge bar in a high-temperature furnace to form a polycrystalline charge bar; placing the polycrystal bar in a high-precision optical floating zone method single crystal furnace for single crystal growth; and the bright, glossy and high-quality LaCoO3-delta single crystal is successfully grown by adopting an optical floating zone method.

This invention discloses a core-shell structured amorphous / nanocrystalline biphase rare-earth-based magnetic refrigeration material, its preparation method, and its applications, belonging to the field of magnetic refrigeration technology. The chemical formula of this material is Gd. x M y Cu z Where 90≤x≤95, 1≤y≤5, 1≤z<5, and y>z, and M is selected from any one of Fe, Co, and Ni; its microstructure is a core-shell dual-phase structure consisting of an amorphous shell encapsulating a nanocrystalline nucleus. This material exhibits more than two magnetic transition temperatures, and its magnetic entropy change curve shows two / three peaks, with a maximum magnetic entropy change of 5.4–6.9 J kg under a 5 T applied magnetic field. ‑1 K ‑1 The magnetic refrigeration temperature range reaches 106-220 K, with a relative refrigeration capacity of 731-1265 J / kg. This material combines high magnetic entropy change, wide refrigeration temperature range, excellent chemical stability, and high service reliability, making it suitable for widespread application as a magnetic refrigerant in the field of green solid-state refrigeration.

The invention belongs to the technical field of adsorbent materials, and particularly relates to a magnetic transition metal sulfide adsorption material and a preparation method and application thereof. The preparation method comprises the following steps: by taking Mo-MOF as a precursor, calcining a sulfur source and the Mo-MOF at 1000-1100 DEG C under a protective atmosphere, carbonizing a ligand in the Mo-MOF to form a porous carbon matrix, performing a vulcanization reaction on the sulfur source and Mo < 3 + > to form MoS2 particles, and embedding the MoS2 particles into the porous carbon matrix to obtain MoS2 / C; a chemical coprecipitation method is adopted, Fe3O4 magnetic nanoparticles are loaded on the surface of MoS2 / C, and the magnetic transition metal sulfide adsorption material is obtained. The prepared magnetic transition metal sulfide adsorption material can efficiently and selectively adsorb and reduce Au < 3 + > in a water body, rapid separation can be carried out through magnetism, and resource recycling of gold is achieved.

The present invention relates to the field of environmental functional materials. Disclosed is a magnetic electrode manufacturing method based on improved electro-Fenton efficiency. A magnetic transition metal electrode is manufactured and the electronic structure thereof is regulated, so as to implement the regulation of selectivity and reaction activity; in addition, by means of the inherent ferromagnetism of a transition metal electrode material and the paramagnetism of O2, an external magnetic field is introduced to magnetize a magnetic electrode, thereby improving mass transfer and reaction activity, and realizing the synergistic regulation of 2-electron ORR selectivity, reaction activity and O2 mass transfer; and by implementing the efficient synthesis of H2O2, the reaction rate of a rate-limiting step is increased, thereby solving the problem of low overall efficiency of an electro-Fenton system, achieving the lowest costs, and reducing process operation energy consumption while improving sewage treatment efficiency.

The present invention discloses a shear strain-controlled CrS2 spin valve device, which is formed by parallel connection of two or more spin valve device units. Each spin valve device unit includes a substrate, a CrS2 layer and a protective layer disposed on the substrate, and is prepared by the following method: First, a 1T'-phase CrS2 layer is grown on the substrate; Second, a lateral heterojunction is regulated and formed; Third, a protective layer is grown on the lateral heterojunction; Fourth, a magnetic heterojunction is regulated and formed; The present invention also discloses a control method for the spin valve device unit: after connecting the spin valve device to an external circuit, a shear strain is applied to adjust the spin state of the spin valve device unit. Based on the ferroelasticity of CrS2 itself and the mutual coupling of ferromagnetism and ferroelasticity, the ferroelasticity of the 1T'-phase CrS2 layer is regulated by strain to further adjust its magnetic transition, solving the problem of matching different materials with different properties; the control method of the present invention is simple and easy to implement.

The present invention discloses a method for preparing a magnetic electrode based on improving the electro-Fenton efficiency. The present invention belongs to the field of environmental functional materials. By preparing a magnetic transition metal electrode, its electronic structure is regulated, thereby achieving the regulation of selectivity and reaction activity. At the same time, the inherent ferromagnetism of the transition metal electrode material itself and the paramagnetic properties of O2 are utilized to introduce an external magnetic field to magnetize the magnetic electrode, thereby improving mass transfer and reaction activity. It is possible to achieve coordinated regulation of 2-electron ORR selectivity, reaction activity and O2 mass transfer. By achieving efficient synthesis of H2O2, the reaction rate of the rate-limiting step is increased, thereby solving the problem of low overall efficiency of the electro-Fenton system, achieving the lowest cost, while improving sewage treatment efficiency and reducing process operation energy consumption.

A magnetic nanofluid that includes magnetic transition metal ferrite nanoparticles, ferroelectric nanoparticles, and a carrier fluid, and a method of changing the temperature of an object (e.g., heating or cooling) using the magnetic nanofluid. The magnetic transition metal ferrite nanoparticles and ferroelectric nanoparticles can be present as a composite comprising both types of nanoparticles. The use of the magnetic nanofluid is associated with an increase in the Nusselt number in the presence of a magnetic field.

The application belongs to the technical field of semiconductor thin film materials, and particularly relates to a diluted magnetic semiconductor thin film for In-based semiconductor materials. 2‑x M x O3, the doping element is a non-magnetic transition metal M, which is one or more of Fe, Mn, Co or Ni, and 0 < x < 0.1. The application adopts a laser pulse deposition technology (PLD) based on a ceramic target material to prepare an InO-based diluted magnetic semiconductor thin film with room-temperature ferromagnetism by means of a transition metal ion as a donor doping mode. The PLD technology of the application can incorporate a high proportion of transition metal ions into the InO lattice, and a large number of lattice defects can be introduced by controlling the deposition conditions, so that a ferromagnetic thin film material higher than room temperature is induced, which can be applied to spin electronic devices.

The application discloses a kind of battery module active and passive combination ejection structure, energy storage system and method, it is related to battery energy storage safety structure technical field, based on the active and passive combination battery electric / thermal magnetic induction ejection structure design of electromagnetic induction and soft magnetic iron material specific temperature under magnetic transition feature, through electrical and mechanical linkage, the safety of battery pack ejection is guaranteed, active trigger is monitored voltage, temperature and other abnormal information by BMS, and the instruction execution ejection is issued by system general control;Passive trigger utilizes the magnetic transition characteristics of soft magnetic iron at specific temperature (thermal runaway characteristic temperature), without BMS instruction, can be automatically triggered, using the trigger mechanism of active and passive combination solves the limitation of only relying on BMS active control in prior art, through two kinds of mechanism complement each other, even if BMS monitoring is inaccurate or sensor failure, still can be isolated fault battery pack by passive trigger, greatly reduce the security risk.

A device (880) for storing data, the device comprising: comprising a magnetic transition (721): comprising a stack of structures: a first structure (721aa; 721ac) comprising a magnet with a non-fixed perpendicular magnetic anisotropy (PMA) with respect to an xy-plane of a device; a second structure (221b) comprising one of a dielectric or a metal; a third structure (421c) comprising a magnet with a fixed PMA, wherein the third structure has an axis of anisotropy perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and the third structure; a fourth structure (725) adjacent to the first structure (721aa; 721ac) of the magnet, wherein the fourth structure comprises metal (725); a connection (222; 722), adjacent to the fourth structure (725), such that the fourth structure (725) is between the magnetic junction (721) and the connection (222; 722); a fifth structure (726) adjacent to the connection (222; 722), such that the fourth and fifth structures (726) are on opposite surfaces of the connection (222; 722), wherein the fifth structure (726) comprises a magnet with a magnetization in the plane relative to the xy-plane of the device; and an eighth structure (728) between the compound (222; 722) and the fifth structure (726), wherein the eighth structure (728) comprises an antiferromagnetic (AFM) material and wherein the compound (222; 722) comprises a spin-orbit material.

Provided is a magnetic refrigeration material whose magnetic transition temperature has been adjusted with high accuracy and which includes at least a first predetermined magnetic refrigeration material and a second predetermined magnetic refrigeration material which differs from the first magnetic refrigeration material. The absolute value of the difference between the magnetic transition temperature of the present magnetic refrigeration material and a target magnetic transition temperature is 0.7 K or less. The content of the first magnetic refrigeration material and the content of the second magnetic refrigeration material are determined by the magnetic transition temperatures of the first magnetic refrigeration material and the second magnetic refrigeration material and by a target magnetic transition temperature of the magnetic refrigeration material.

The invention discloses a preparation method of a directionally-arranged boron nitride-based self-expanding epoxy flame-retardant material. The preparation method comprises the following steps: (1) preparing a BN / Fe3O4-coated PATP nano composite flame retardant; (2) preparing the directionally-arranged boron nitride-based self-expansion epoxy flame-retardant material; according to the invention, the flame retardance is improved by utilizing the heat transfer anisotropic characteristic after oriented arrangement of BN; an ATP monomer expanding agent and a magnetic transition metal oxide (ferroferric oxide) are used for synergistically modifying BN, so that a way is provided for magnetically inducing oriented arrangement of BN nanosheets, and meanwhile, the effect of expanding a carbon layer of a non-expansive resin matrix is achieved; in the combustion process, the directionally-arranged boron nitride-based self-expanding epoxy flame-retardant material has the lowest PHRR (833.92 kW / m < 2 >), THR (24.35 MJ / m < 2 >), PSPR (0.121 m < 2 > / s) and TSP value (3.6 m < 2 >), and shows the best flame retardance and smoke suppression effect.

A nanocomposite comprising a nanocarrier, a pharmaceutical compound disposed on a surface of the nanocarrier, and a biocompatible coating disposed on the pharmaceutical compound. The nanocarrier comprises nanotubes of a silicate or aluminosilicate material, preferably halloysite, and nanoparticles of a magnetic transition metal ferrite material of formula MFe2O4, where M is selected from the group consisting of zinc, nickel, copper, manganese, and cobalt, the nanoparticles being disposed on an interior and / or an exterior surface of the nanotubes. The pharmaceutical compound is disposed in the pores and / or on the surface of the nanocarrier by a solution phase impregnation process. The nanomedicinal 10 composition is used in a method of treating pulmonary infections. The nanomedicinal composition may be administered by inhalation.

The invention relates to the technical field of multifunctional high-entropy ceramics, and particularly discloses bismuth niobate-based pyrochlore phase high-entropy ceramics and a single-phase preparation method thereof. The chemical formula of the material is (Nb0. 36Bi1.64) (Fe0. 2Co0. 2Ni0. 2Mn0. 2Cr0. 2) NbO7-delta, the crystal structure of the material belongs to a defective A2B2O7 type single-phase pyrochlore phase structure, and the interior of the structure is disordered in position, namely, part of B-site niobium ions occupy the position of A-site bismuth ions, five equimolar magnetic transition metal ions occupy the position of the B-site niobium ions, and a certain proportion of oxygen vacancy defects exist. The single-phase high-entropy ceramic material provided by the invention has ferromagnetism at room temperature, also has room-temperature magnetoelectric multiferroic property and wide-spectrum light absorption characteristic in a visible-near infrared region of 300-2000nm, can still keep a stable pyrochlore cubic crystal phase structure after being calcined at a high temperature of 1000 DEG C for 5 hours, and has excellent high temperature resistance.