Preparation method for copper-iron-zinc-tin-sulfur micron monocrystal particles

A technology of copper-iron-zinc-tin-sulfur and single-crystal particles, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, photovoltaic power generation, etc., can solve the difficulties in the preparation and performance optimization of high-efficiency thin-film batteries, and the difficulty in growing large-size single-crystal particles and other issues, to achieve the effects of easy industrial production, improved utilization, and advanced optical characteristics

Active Publication Date: 2016-07-06
LINGNAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared with binary and ternary compound semiconductors, compound semiconductors such as CFZTS have more complex physical properties due to the increase of constituent elements, so the preparation and performance optimization of high-efficiency thin-film batteries of such compounds become more complex. Difficult, and this kind of multi-component compound is very prone to various binary and ternary heterophases and some metastable phases during the preparation process. Commonly used multi-component co-evaporation, pulse laser deposition, sulfide selenization after sputtering, electrochemical film It is difficult to prepare CFZTS films with uniform composition and stable performance by vacuum processes such as post-selenization and sulfidation and non-vacuum processes such as heat injection, solvothermal, hydrothermal method, and spray pyrolysis; when preparing solar cells, the performance of single crystal particle batteries Better performance than thin film batteries, however, it is difficult to grow large-sized single crystal particles that meet the performance requirements of the solar cell absorber layer with traditional single crystal growth techniques (vapor phase transport technology, melting technology)

Method used

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  • Preparation method for copper-iron-zinc-tin-sulfur micron monocrystal particles
  • Preparation method for copper-iron-zinc-tin-sulfur micron monocrystal particles
  • Preparation method for copper-iron-zinc-tin-sulfur micron monocrystal particles

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Embodiment 1

[0035] Weigh 10mmol CuS, 1.5mmol FeS, 3.5mmol ZnS, 5mmol SnS and 50mmol CsI of the flux as the reaction raw materials, mix them and grind them thoroughly to make them evenly mixed; put the mixed samples into a quartz bottle, and use a vacuum pump unit to evacuate to 10-10 2 Pa (can also be protected with an inert gas), so as to eliminate the influence of air on the molten salt reaction, seal the quartz bottle with an oxyhydrogen flame; place the sealed quartz bottle with the mixed sample in an ordinary heating furnace from normal temperature to 800 Keep at ℃ for 72 hours, then cool down to 600℃, take out the quartz bottle and quickly cool it down to room temperature (put it in water); finally take out the sample in the quartz bottle, wash it with ultrasonic water several times to remove the flux CsI, and then put the sample in a drying oven at 80℃ After drying for 2 hours, black particles with crystalline luster on the surface were obtained, and finally the obtained sample was ...

Embodiment 2

[0038] Weigh the reaction raw materials 10mmolCu, 3.5mmolFeS, 1.5mmolZn, 5mmolSn, 18mmolS and flux 60mmolCsCl, mix and grind thoroughly to make it evenly mixed; put the mixed sample into a quartz bottle, and use the vacuum pump unit to evacuate to 10-10 2 Pa (can also be protected with inert gas), so as to eliminate the influence of air on the molten salt reaction, seal the quartz bottle with an oxyhydrogen flame; place the sealed quartz bottle with mixed samples in an ordinary heating furnace and heat it from normal temperature to 750 Keep the temperature at ℃ for 72 hours, then cool down to 600℃, take out the quartz bottle and quickly cool it down to room temperature (put it in water); finally take out the sample in the quartz bottle, wash it with ultrasonic water several times to remove the flux CsCl, and then put the sample in a drying oven at 80℃ After drying for 2 hours, black particles with crystalline luster on the surface were obtained, and finally the obtained sample ...

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Abstract

The invention discloses a preparation method for copper-iron-zinc-tin-sulfur micron monocrystal particles. Elementary substance copper powder, elementary substance zinc powder, elementary substance tin powder, metal sulfide powder, elementary substance sulfur powder, a fluxing agent and the like are combined to form the reaction raw material; the reaction raw material is grinded and mixed based on a determined formula; the mixed powder is vacuum packaged in a quartz reaction container at a temperature of 600-1,000 DEG C for 48-120h; the quartz reaction container is cooled rapidly to the room temperature; and then the sample is taken out, washed and dried to obtain the copper-iron-zinc-tin-sulfur micron monocrystal particles. The dimensions of the prepared monocrystal particles can be regulated and controlled according to recrystallization temperature and time; the components of the particles can be effectively blended within a certain range based on the molar ratio of elements in the precursor; and in addition, the obtained monocrystal particles are uniform in particles, controllable in dimensions, and better in performance than that of the monocrystal particles prepared by the conventional method.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic materials and devices, and more specifically, to a method for preparing copper-iron-zinc-tin-sulfur micron single crystal particles. Background technique [0002] Multi-component CuInGaSe 2 (CIGS) thin-film solar cell has high conversion efficiency and is easy to mass-produce. It has become the most promising solar cell material at present. At present, CIGS cell is the thin-film solar cell with the highest photoelectric conversion efficiency in the world, and its highest conversion efficiency has been up to 21.7%. However, its constituent elements In and Ga are scarce on the earth, making it difficult for CIGS thin-film batteries to achieve TW (10 9 kW) level of large-scale applications. [0003] The natural ore of kesterite in nature is mainly Cu 2 [FeZn]SnS 4 , while kesterite Cu 2 ZnSnS 4 (CZTS) quaternary semiconductor compounds are considered to be the most promisi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/0445H01L31/18
CPCH01L31/0326H01L31/0445H01L31/1828Y02E10/50Y02P70/50
Inventor 张军廖峻邵乐喜王磊
Owner LINGNAN NORMAL UNIV
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