Chemical vapor deposition device and method

Abstract

The invention provides a chemical vapor deposition device and method. The chemical vapor deposition device comprises an outer cavity body, a motion tray, inner cavity bodies, gas exhausting cavity bodies, tray grooves, chip bearing zones, heating devices, gas supply pipelines, first gas exhausting pipelines and a second gas exhausting pipeline; the same or different reaction precursor gases or inert gases are injected into the multiple independent inner cavity bodies, and through sealing of capillary gaps between the inner cavity bodies and the upper surface of the tray, the pressure intensityof the inner cavity bodies is always higher than that of the outer cavity body; and each inner cavity body is independently subjected gas feeding and gas exhausting, and independently heated and cooled; by controlling the motion tray to continuously rotate or rotate in an indexing mode, reaction precursors sprayed by nozzles in the different inner cavity bodies can be sprayed onto chips arrangedon the chip bearing zones on the upper surface of the motion tray by turns, and continuous chemical vapor deposition or periodic atomic layer deposition of a film is achieved. According to the chemical vapor deposition device and method, the different reaction precursors can be isolated, quick temperature raising, temperature lowering and gas switching are achieved, and the semiconductor film growing yield and productive rate are advantageously increased.

Description

technical field [0001] The invention belongs to the technical field of semiconductor equipment, and in particular relates to a chemical vapor deposition device and method. Background technique [0002] Chemical vapor deposition CVD is a key process for preparing semiconductor thin film devices, including solar thin film batteries, blue-violet LEDs, high-power power electronic devices and two-dimensional materials. CVD reactor is the key equipment to realize the above process. Most of the current CVD growth is to carry the more volatile reaction precursors into the reaction chamber through the carrier gas such as hydrogen or nitrogen, and use high temperature or plasma to activate the chemical reaction to achieve thin film deposition and grow thin film heterojunctions that meet the device requirements. . [0003] In order to obtain uniform film composition, thickness, and high growth rate, most of the existing film growth processes need to heat the wafer to a high temperatu...

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Problems solved by technology

[0012] The purpose of the present invention is to provide a chemical vapor deposition device and method for the above problems, which can effectively avoid the problems of gas phase parasitic reaction, cross-contamination, low growth rate and poor film growth consistency in film growth, and can isolate different reaction precursors, and achieve rapid heating and cooling and gas switching

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