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Antenna coupling Terahertz detector

A terahertz detector and terahertz detection technology, applied in the field of semiconductor terahertz detection technology, can solve problems such as the lack of compact and efficient terahertz detection technology, and achieve improved detection performance, increased operating temperature, dark current and dark current. low noise effect

Inactive Publication Date: 2013-06-26
SHANGHAI JIAO TONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Compact and efficient terahertz detection technology is still lacking

Method used

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  • Antenna coupling Terahertz detector
  • Antenna coupling Terahertz detector

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Embodiment Construction

[0032] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0033] The present invention provides an antenna coupling terahertz detector, such as figure 1 As shown, it includes a terahertz antenna 1, a first semiconductor substrate 2, a second semiconductor substrate 3 and a semiconductor quantum well structure terahertz detector 4; the terahertz antenna 1 is arranged on the upper surface of the first semiconductor substrate 2, and the second The lower surface of a semiconductor substrate 2 is connected to the upper surface of a second semiconductor substrate 3 , and the semiconductor quantum well structure terahertz detector 4 is arranged on the bottom surface of the second semiconductor substrate 3 . Among them, on the photosensitive surface of the terahertz light of the terahertz antenna 1, the incident terahertz electromagnetic wave converges toward the center of the terahertz antenna 1 under the ac...

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Abstract

The invention discloses an antenna coupling Terahertz detector comprising a Terahertz antenna, a first semiconductor substrate, a second semiconductor substrate and a Terahertz detector for a semiconductor quantum well structure. The Terahertz antenna is arranged on an upper surface of the first semiconductor substrate, a lower surface of the first semiconductor substrate is connected with an upper surface of the second semiconductor substrate, and the Terahertz detector of the semiconductor quantum well structure is arranged on a bottom surface of the second semiconductor substrate. The Terahertz antenna is a light-sensitive surface of Terahertz light, incident Terahertz electromagnetic waves converge to a position where the Terahertz detector for the semiconductor quantum well structure locates under the action of the Terahertz antenna, and the Terahertz electromagnetic waves converted through the Terahertz antenna are received and analyzed by the Terahertz detector for the semiconductor quantum well structure. The Terahertz electromagnetic waves are converged through the Terahertz antenna, detection performance is improved, and operating temperature is increased. The antenna coupling Terahertz detector has simple production process.

Description

technical field [0001] The technical field that the present invention relates to is semiconductor photoelectric detection technology, specifically an antenna-enhanced semiconductor terahertz detection technology. [0002] Background technique [0003] Terahertz waves refer to electromagnetic waves with a frequency in the range of 0.1THz to 10THz, and a wavelength range of about 0.03 to 3mm, which is between microwave and infrared. Terahertz detection and imaging technology has important application prospects in national security, airport security inspection, health examination, trace substance analysis, etc., and is of great significance. After entering the 1980s, with the development of new materials and technologies, especially the development of ultrafast technology and semiconductor quantum devices, terahertz technology has developed rapidly, and terahertz research has emerged around the world. upsurge. In 2004, the U.S. government rated terahertz technology as the fo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/08H01L31/02H01L31/18
CPCY02P70/50
Inventor 刘惠春杨耀张月蘅
Owner SHANGHAI JIAO TONG UNIV
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