Preparation method for bismuth-based non-rectangular group III-V semiconductor quantum well

A III-V, semiconductor technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of large strain accumulation, limit the scope of material design and growth, unfavorable growth of high-quality materials, etc., to achieve a large degree of freedom, operation The effect of simple and convenient process

Active Publication Date: 2013-10-23
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Problems solved by technology

With the deepening of research, this rectangular quantum structure also brings some restrictions. For example, in addition to the material composition, the variable parameter of the rectangular quantum structure is the width of the potential well and barrier, so the design requirements for some special functions often can

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  • Preparation method for bismuth-based non-rectangular group III-V semiconductor quantum well
  • Preparation method for bismuth-based non-rectangular group III-V semiconductor quantum well

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Embodiment 1

[0018] In the following to In on the InP substrate 0.53 Ga 0.47 As / InAs non-rectangular quantum well preparation method is taken as an example to illustrate this bismuth-based non-rectangular III-V group semiconductor quantum well preparation method:

[0019] (1) Need to grow on InP substrate with In 0.53 Ga 0.47 As is the potential barrier, In 0.53 Ga 0.47 As / InAs is a quantum well structure with a non-rectangular potential well;

[0020] (2) The epitaxial growth adopts the conventional molecular beam epitaxy method, and the In 0.53 Ga 0.47 As barrier, re-grow InAs as the bottom of the potential well, and then grow In 0.53 Ga 0.47 As barrier (as figure 2 shown by the solid line in the center), the bismuth beam source shutter is opened during the growth of the quantum well, and the bismuth element will cause the interdiffusion of In and Ga elements at the interface, so that the quantum well forms a non-rectangular structure (such as figure 2 Shown by dotted line a ...

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Abstract

The invention relates to a preparation method for a bismuth-based non-rectangular group III-V semiconductor quantum well. The preparation method comprises the step of growing a potential well material and a potential barrier material of a group III-V semiconductor quantum well, wherein bismuth is added in the growth processes of both the potential well material and the potential barrier material. According to the preparation method, bismuth beam source shutters are opened simultaneously in the processes of growing the potential well material and the potential barrier material of the quantum well, and a non-rectangular quantum well structure is realized by utilizing the group III element interdiffusion caused by the bismuth. By the method, material components can be controlled effectively; the problem that the conventional growth method is only suitable for growing a rectangular quantum well structure with component mutations is solved; greater freedom is introduced to the design and the implementation of the structure and the functional of quantum; the preparation method disclosed by the invention is suitable for adopting a plurality of material growth means, such as molecular beam epitaxy and atomic layer deposition; and the operation process is simple and convenient.

Description

technical field [0001] The invention belongs to the field of preparation of semiconductor microstructure materials, in particular to a preparation method of bismuth-based non-rectangular III-V group semiconductor quantum wells. Background technique [0002] With the development of thin-film material epitaxy methods and semiconductor physics knowledge, quantum microstructures have been successfully prepared experimentally, which has promoted the rapid development of optoelectronic and electronic devices such as semiconductor lasers and semiconductor detectors. These devices have been widely used in different fields, and have played an important role in people's in-depth understanding and development of various quantum theories. Development of thin-layer epitaxy methods. At present, the quantum structure used is mainly based on heterogeneous materials. For example, people have developed a typical AlGaAs / GaAs system quantum structure with AlGaAs on the GaAs substrate as a pote...

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Application Information

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IPC IPC(8): H01L33/00H01L33/06H01L33/30
Inventor 王庶民顾溢宋禹忻叶虹
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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