82 results about "Quantum structure" patented technology

In a semiconductor device, concave sections in which an opening area becomes small in proportion as a depth becomes deep are formed in a crystal layer, and a quantum structure is formed on at least one crystal face of a bottom section of the concave section and a border formed between plural sidewalls thereof. In case the quantum structure is formed in the bottom section, a quantum box is formed therein. If the quantum structure is formed in the border between the sidewalls of the concave section, a quantum wire is formed therein. In case the quantum structure is formed in the sidewall of the concave section, a two-dimensional quantum well is formed therein.

Amongst the candidates for very high efficiency electronics, solid state light sources, photovoltaics, and photoelectrochemical devices, and photobiological devices are those based upon metal-nitride nanowires. Enhanced nanowire performance typically require heterostructures, quantum dots, etc which requirement that these structures are grown with relatively few defects and in a controllable reproducible manner. Additionally flexibility according to the device design requires that the nanowire at the substrate may be either InN or GaN. Methods of growing relatively defect free nanowires and associated structures for group IIIA-nitrides are presented without the requirement for foreign metal catalysts, overcoming the non-uniform growth of prior art techniques and allowing self-organizing quantum dot, quantum well and quantum dot-in-a-dot structures to be formed. Such metal-nitride nanowires and quantum structure embedded nanowires support a variety of devices including but not limited to very high efficiency electronics, solid state light sources, photovoltaics, and photoelectrochemical devices, and photobiological devices.

A silicon nanoparticle transistor and transistor memory device. The transistor of the invention has silicon nanoparticles, dimensioned on the order of 1 nm, in a gate area of a field effect transistor. The resulting transistor is a transistor in which single electron flow controls operation of the transistor. Room temperature operation is possible with the novel transistor structure by radiation assistance, with radiation being directed toward the silicon nanoparticles to create necessary holes in the quantum structure for the flow of an electron. The transistor of the invention also forms the basis for a memory device. The device is a flash memory device which will store electrical charge instead of magnetic effects.

The invention relates to a preparation method for a small silicon-based nano hollow array with orderly heights, belonging to the technical field of nano-structure preparation. The preparation method employs large-diameter polystyrene nano-spheres which are self-mounted into a single-layer nano-sphere film serving as masks on a Si substrate. After going through multiple technical procedures such as reaction ion lithography, direct current sputtering metal films, selective corrosion and the like, the mask is converted into a small inverted-pyramidal nano-hollow array, which is a two-dimensionalhexagonal dot array. The cycle of the nano-hollow arrays is determined by the diameters initially selected for the polystyrene nano-spheres. The invention is likely to be used in fields of growth of controllable quantum structures, photonic crystal manufacturing, quantum logic operation, magnetic storage media, etc.

The invention relates to epitaxial material of white light GaN light emitting diode which requires no phosphor for conversion and manufacturing method thereof, i.e. employing conventional semiconductor device deposition technique to orderly deposit an initial growth layer, an intrinsic GaN buffer layer, a n-type GaN layer, a InGaN relaxation layer, an InGaN luminescent layer of multi quantum structure, a p-type AlGaN interlayer and a p-type GaN layer; and employing the epitaxial material to make single chip white light light emitting diode; the method preserves the manufacturing techniques for making current normal monochromatic light light emitting diode device, and only improves the growth process of the GaN based luminescent material, thus, the In component achieves the level to form In quantum dot, and a stress releasing layer is added. In this manner, in the precondition of not increasing the complexity of the device, the production cost for making white light light emitting diode can be basically reduced, and the light emitting efficiency and utilization can be increased, and the weakness of the white light light emitting diode which employs phosphor for conversion can be overcome, and the whole performance of white light light emitting diode can be improved.

A novel and useful controlled quantum shift register for transporting particles from one quantum dot to another in a quantum structure. The shift register incorporates a succession of qdots with tunneling paths and control gates. Applying appropriate control signals to the control gates, a particle or a split quantum state is made to travel along the shift register. The shift register also includes ancillary double interaction where two pairs of quantum dots provide an ancillary function where the quantum state of one pair is replicated in the second pair. The shift register also provides bifurcation where an access path is split into two or more paths. Depending on the control pulse signals applied, quantum dots are extended into multiple paths. Control of the shift register is provided by electric control pulses. An optional auxiliary magnetic field provides additional control of the shift register.

A novel and useful controlled quantum shift register for transporting particles from one quantum dot to another in a quantum structure. The shift register incorporates a succession of qdots with tunneling paths and control gates. Applying appropriate control signals to the control gates, a particle or a split quantum state is made to travel along the shift register. The shift register also includes ancillary double interaction where two pairs of quantum dots provide an ancillary function where the quantum state of one pair is replicated in the second pair. The shift register also provides bifurcation where an access path is split into two or more paths. Depending on the control pulse signals applied, quantum dots are extended into multiple paths. Control of the shift register is provided by electric control pulses. An optional auxiliary magnetic field provides additional control of the shift register.

A programmable dopant fiber includes a plurality of quantum structures formed on a fiber-shaped substrate, wherein the substrate includes one or more energy-carrying control paths, which pass energy to quantum structures. Quantum structures may include quantum dot particles on the surface of the fiber or electrodes on top of barrier layers and a transport layer, which form quantum dot devices. The energy passing through the control paths drives charge carriers into the quantum dots, leading to the formation of “artificial atoms” with real-time, tunable properties. These artificial atoms then serve as programmable dopants, which alter the behavior of surrounding materials. The fiber can be used as a programmable dopant inside bulk materials, as a building block for new materials with unique properties, or as a substitute for quantum dots or quantum wires in certain applications.

A method and system for encoding or processing data is provided. Data is represented by a qubit. The qubit is generated by an emulator within an encoding system. The qubit is entangled with another qubit to create encoded data. The encoded data is useable for a non-quantum environment. The qubit and the another qubit are entangled by reconfiguring a quantum structure that is mapped onto the encoded data.

A light emitting device with a stair quantum well structure in an active region. The stair quantum well structure may include a primary well and a single step or multiple steps. The light emitting device may be a nonpolar, semipolar or polar (Al,Ga,In)N based light emitting device. The stair quantum structure improves the radiative efficiency of the light emitting device.

A method of an embodiment of the present of the present application is for producing a nano-scale low dimensional quantum structure. The method includes: bringing a catalyst on a substrate into contact with vaporized carbon source, and emitting an electromagnetic wave to the catalyst so as to form single-walled carbon nano-tubes on the catalyst. As a result, it is possible to form the nano-scale low-dimensional quantum structure on a target area.

The present invention relates to a method of fusion for heteroepitaxial layers and overgrowth thereon. According to the present invention, a high quality heteroepilayer can be formed by patterning a fused semiconductor layer, overgrowing it with a persistent patterned character, and fusing other semiconductors having different lattice constants by means of utilizing the rate difference between the lateral growth rate and the vertical growth rate exhibited, on the above process. Further, according to the present invention, the lattice constant difference of the two semiconductors can be overcome and a high quality quantum structure can be formed. According to the present invention, the junction of two semiconductor materials having different lattice constants, as well as a good overgrowth on heteroepitaxial layers can be carried out. Accordingly to the present invention, the base material from which the new, as yet on realized, conceptive optoelectronic device can be made.

An electrically pumped surface-emitting photonic crystal laser includes an electric currents confinement structure arranged on a photonic crystal structure and an active layer with an opening, a transparent conducting layer arranged on the electric currents confinement structure and covering the photonic crystal structure, a metal anode arranged on the transparent conducting layer with an aperture. The photonic crystal laser has its epitaxy structure etched from above to fabricate the photonic crystal to allow laser beams to pass through with conductivity for the purpose of electrically pumping a quantum structure without complex technologies of wafer fusion bonding or epitaxial regrowth. Thereby the laser beams can be emitted from a front surface of the epitaxy structure with a narrow divergence angle.

The invention relates to a semiconductor light-emitting device with wide spectrum light emission function and the preparation method, including a substrate material, a transition layer which directly grows on the substrate and a GaN or n-GaN which is arranged on the transition layer, a plurality of layers of quantum well active regions: a nitride quantum structure luminous layer with the wide spectrum light emission function is a quantum well structure, which is composed of an InxGa1-xN well layer and an InyGa1-yN barrier layer, wherein, 1 is more than x which is more than y which is not less than 0, the x and y in the quantum well structure is spacially even in the layers; the well/barrier double layers of the quantum well structure repeat 1 to 10 periods; a top layer nitride, GaN or p-GaN, the thickness of the top layer nitride is 0.02 to 2 microns; the invention further comprises multiple luminous centers which can emit light which contains the continuous spectrum with the nano-scope of 360 to 900. The nitride semiconductor material is obtained by the epitaxial growth of a metal-organic chemical vapor deposition (MOCVD) epitaxial growth system.

A main object of the present invention is to provide a photoelectric conversion device which is capable of improving the photoelectric conversion efficiency. The invention comprises: a p-layer; an n-layer; an i-layer disposed between the p-layer and the n-layer; a first electrode connected to the p-layer; and a second electrode connected to the n-layer, wherein the i-layer comprises a wall layer constituted by a first semiconductor, and a quantum structure portion constituted by a second semiconductor disposed in the wall layer; a band gap of the first semiconductor is wider than that of the second semiconductor; when a concentration of the n-type impurity that may be contained in the middle of the i-layer in a thickness direction thereof is defined as Cn1, a concentration of the n-type impurity that may be contained in the region on the p-layer side of the i-layer is defined as Cn2, a concentration of the p-type impurity that may be contained in the middle of the i-layer in a thickness direction thereof is defined as Cp1, and a concentration of the p-type impurity that may be contained in the region on the n-layer side of the i-layer is defined as Cp2, the relations Cn1<Cn2 and/or Cp1<Cp2 are satisfied.

A method for controlling a structure of a nano-scale substance, which comprises irradiating a mixture of low-dimensional quantum structures having a nano-scale with an electromagnetic wave in an oxygen atmosphere, to thereby selectively oxidize a low-dimensional quantum structure having a density of states resonating with the electromagnetic wave used for the irradiation. The method allows a low-dimensional quantum structure having a specific structure to be selectively disappeared from the mixture of low-dimensional quantum structures having a nano-scale.

A photoelectric conversion element includes a photoelectric conversion layer having the quantum structure and utilizes intersubband transition in a conduction band. The photoelectric conversion element includes a superlattice semiconductor layer in which a barrier layer and a quantum dot layer as a quantum layer are alternately and repeatedly stacked. The barrier layer includes an indirect transition semiconductor material, and the quantum dot layer has a nano-structure including a direct transition semiconductor material. The indirect transition semiconductor material constituting the barrier layer has a bandgap of more than 1.42 eV at room temperature.

An active layer contains quantum structures. The active layer amplifies light propagating therein while current is injected therein. Electrodes are provided for sections of the active layer sectionalized along a light propagation direction. The electrodes inject different currents into the sections. Current is supplied to the electrodes in such a manner that a first current density is set to one section of the active layer and a second current density is set to another section. The first current density is lower than that at a cross point and the second current density is higher than that at the cross point. The cross point is a cross point between gain coefficient curves at least two different transition wavelengths of the quantum structures. The curves are drawn in a graph showing a relation between a density of current injected into the active layer and a gain coefficient of the active layer.

A novel and useful controlled quantum shift register for transporting particles from one quantum dot to another in a quantum structure. The shift register incorporates a succession of qdots with tunneling paths and control gates. Applying appropriate control signals to the control gates, a particle or a split quantum state is made to travel along the shift register. The shift register also includes ancillary double interaction where two pairs of quantum dots provide an ancillary function where the quantum state of one pair is replicated in the second pair. The shift register also provides bifurcation where an access path is split into two or more paths. Depending on the control pulse signals applied, quantum dots are extended into multiple paths. Control of the shift register is provided by electric control pulses. An optional auxiliary magnetic field provides additional control of the shift register.

The invention relates to a non-rectangular quantum structure based on a digital alloy and an implementation method. The non-rectangular quantum structure is characterized in that the non-rectangular quantum structure is implemented by selecting a hetero-epitaxial material system and combinatorial design and adopting a method of the digital alloy; and the digital alloy is formed by two binary or multi-component alloy materials. The implementation method can effectively control the components of the material to precisely vary according to the design requirement on the quantum scale, thereby overcoming the single problem that the rectangular quantum structures with components mutated are only suitable to be grown by the conventional growth method, bringing in higher degree of freedom for design and implementation of the quantum structure and functions and bringing benefits to strain and interface control of the quantum structure. The invention is not only suitable for the special semiconductor lasers needing to adopt non-rectangular quantum wells but also suitable for other novel electronic or photoelectronic devices and has good universality.

An electrically excited photonic crystal surface emitting type laser element comprises: a current limiting structure which is located on a photonic crystal structure and an active layer and is provided with an aperture; a transparent conducting layer positioned on the current limiting structure and covering the photonic crystal structure; and positive electrode metal positioned on the transparentconductive layer and provided with a metal hole. According to the invention, the photonic crystal is manufactured by directly etching from the uppermost part of the epitaxial structure to the inside;a complex technology of wafer fusion or epitaxial growth is not needed, laser light can penetrate the photonic crystal structure and has conductivity, the quantum structure is electrically excited, light can be emitted from the front face of the epitaxial structure through the photonic crystal structure, and the photonic crystal structure has the excellent characteristics of being small in far-field divergence angle and the like.

By positively employing a quantum structure such as a point contact, a quantum fine line, and a quantum dot on a semiconductor material so that an electric potential barrier is generated from a quantum effect of a conductive region, that is, from the constraint energy of one or zero dimension of electrons or holes and the electric potential barrier is controlled, flow and intensity of an electric current are controlled when light or electromagnetic wave is irradiated. A conductive region is formed by a quantum structure in which a difference in the constraint energies of the holes or electrons is formed between two electrodes, and when the light or electromagnetic wave is irradiated to a partial depletion region of the holes or electrons generated in the quantum structure, pairs of the electrons and the holes are generated in the partial depletion region. Thus, the depletion is released and an electric current flows therein.