The invention relates to
epitaxial material of
white light GaN
light emitting diode which requires no
phosphor for conversion and manufacturing method thereof, i.e. employing conventional
semiconductor device deposition technique to orderly deposit an initial growth layer, an intrinsic GaN buffer layer, a n-type GaN layer, a InGaN relaxation layer, an InGaN luminescent layer of multi
quantum structure, a p-type AlGaN interlayer and a p-type GaN layer; and employing the
epitaxial material to make
single chip white light light emitting diode; the method preserves the manufacturing techniques for making current normal monochromatic light
light emitting diode device, and only improves the growth process of the GaN based
luminescent material, thus, the In component achieves the level to form In
quantum dot, and a stress releasing layer is added. In this manner, in the
precondition of not increasing the complexity of the device, the production cost for making
white light light emitting
diode can be basically reduced, and the light emitting efficiency and utilization can be increased, and the
weakness of the white light light emitting
diode which employs
phosphor for conversion can be overcome, and the whole performance of white light light emitting
diode can be improved.