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Non-rectangular quantum structure based on digital alloy and implementation method thereof

A non-rectangular, digital technology, applied in the field of semiconductor optoelectronic materials and devices, can solve problems such as unfavorable growth of high-quality materials, limit the scope of material design and growth, and achieve the effect of large degree of freedom and good versatility

Inactive Publication Date: 2010-08-25
弦海(上海)量子科技有限公司
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  • Abstract
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  • Application Information

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Problems solved by technology

With the deepening of the research, this rectangular quantum structure also brings some restrictions to people, for example: for the rectangular quantum structure, in addition to the material composition, the variable parameter is the width of the potential well and the potential barrier, and the design requirements for some special functions Often can not be satisfied; another example: for the material system using lattice mismatch, the rectangular quantum structure with abrupt composition often causes a large strain accumulation, which on the one hand limits the scope of material design and growth, on the other hand does not Facilitates the growth of high-quality materials

Method used

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  • Non-rectangular quantum structure based on digital alloy and implementation method thereof
  • Non-rectangular quantum structure based on digital alloy and implementation method thereof

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Embodiment

[0022] Embodiment: A wavelength-expanded quantum structure epitaxy material using InAlAs / InGaAs digital alloy barrier and InGaAs / InAs digital alloy triangular potential well

[0023] Implementation steps:

[0024]1. It is necessary to realize a quantum structure with a quantum transition wavelength greater than 2 microns on an InP substrate without introducing antimonide materials. The design wavelength of this quantum structure is about 2.3 μm (for the convenience of explanation, the following is an example, and it is not limited to 2.3 μm) μm, it needs to be extended to other wavelengths and so on), so choose the binary system InAs and the lattice-matched ternary system In 0.53 Ga 0.47 As is a potential well alloy material;

[0025] 2. The forbidden band width of the barrier layer is required to be larger than the lattice-matched In 0.53 Ga 0.47 As material, so a lattice-matched In 0.53 Ga 0.47 As and In 0.52 al 0.48 As is a barrier alloy material;

[0026] 3. Accor...

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Abstract

The invention relates to a non-rectangular quantum structure based on a digital alloy and an implementation method. The non-rectangular quantum structure is characterized in that the non-rectangular quantum structure is implemented by selecting a hetero-epitaxial material system and combinatorial design and adopting a method of the digital alloy; and the digital alloy is formed by two binary or multi-component alloy materials. The implementation method can effectively control the components of the material to precisely vary according to the design requirement on the quantum scale, thereby overcoming the single problem that the rectangular quantum structures with components mutated are only suitable to be grown by the conventional growth method, bringing in higher degree of freedom for design and implementation of the quantum structure and functions and bringing benefits to strain and interface control of the quantum structure. The invention is not only suitable for the special semiconductor lasers needing to adopt non-rectangular quantum wells but also suitable for other novel electronic or photoelectronic devices and has good universality.

Description

[0001] Field [0002] The invention relates to a non-rectangular quantum structure based on a digital alloy and a realization method thereof, belonging to the field of semiconductor optoelectronic materials and devices. Background technique [0003] The introduction of quantum structures in semiconductor optoelectronic devices (such as semiconductor lasers, etc.) and other electronic devices (such as resonant tunneling devices, etc.) has been developed for decades. An in-depth understanding and development of various quantum theories plays an important role. At present, the application of compound semiconductor materials to form quantum structures mainly adopts various thin-layer epitaxy methods, such as molecular beam epitaxy (MBE), metal-organic vapor phase epitaxy (MOCVD), etc., but quantum structures are mainly formed based on heterogeneous materials. For example: with GaAs as the substrate, people have developed a typical AlGaAs / GaAs system quantum structure with AlGaAs ...

Claims

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Application Information

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IPC IPC(8): B82B1/00B82B3/00
Inventor 张永刚顾溢
Owner 弦海(上海)量子科技有限公司
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