A structure of semiconductor luminous device with wide spectrum photo-emission function

Abstract

The invention relates to a semiconductor light-emitting device with wide spectrum light emission function and the preparation method, including a substrate material, a transition layer which directly grows on the substrate and a GaN or n-GaN which is arranged on the transition layer, a plurality of layers of quantum well active regions: a nitride quantum structure luminous layer with the wide spectrum light emission function is a quantum well structure, which is composed of an InxGa1-xN well layer and an InyGa1-yN barrier layer, wherein, 1 is more than x which is more than y which is not less than 0, the x and y in the quantum well structure is spacially even in the layers; the well / barrier double layers of the quantum well structure repeat 1 to 10 periods; a top layer nitride, GaN or p-GaN, the thickness of the top layer nitride is 0.02 to 2 microns; the invention further comprises multiple luminous centers which can emit light which contains the continuous spectrum with the nano-scope of 360 to 900. The nitride semiconductor material is obtained by the epitaxial growth of a metal-organic chemical vapor deposition (MOCVD) epitaxial growth system.

Description

1. Technical field [0001] The invention relates to a semiconductor light-emitting device and a preparation method, in particular to a method for realizing wide-spectrum multi-band light-emitting by using a novel semiconductor quantum structure. 2. Technical Background [0002] Semiconductor optoelectronic devices play an increasingly important role in scientific research and everyday life. The increasingly wide range of practical applications places more diverse requirements on optoelectronic devices. Semiconductor light-emitting devices have the advantages of small size, high efficiency and long life, and are widely used in the fields of indication, display and lighting. According to the intrinsic band structure of semiconductor materials, electron-hole radiative recombination usually occurs in a very limited energy range. At this time, semiconductor light-emitting devices usually have a narrow emission spectrum, that is, very good monochromaticity, which is a very good c...

AI Technical Summary

Problems solved by technology

The disadvantage is that the spectrum of the emitted light changes too drastically with different injection levels, showing a certain degree of instability

This method of selective growth has serious shortcomings. The main problem is that there are a large number of concentrated defects at the junction of the growth planes of different crystal planes. reduce

Images