White light GaN LED epitaxial material without fluorescent powder conversion and method for making the same

Abstract

The invention relates to epitaxial material of white light GaN light emitting diode which requires no phosphor for conversion and manufacturing method thereof, i.e. employing conventional semiconductor device deposition technique to orderly deposit an initial growth layer, an intrinsic GaN buffer layer, a n-type GaN layer, a InGaN relaxation layer, an InGaN luminescent layer of multi quantum structure, a p-type AlGaN interlayer and a p-type GaN layer; and employing the epitaxial material to make single chip white light light emitting diode; the method preserves the manufacturing techniques for making current normal monochromatic light light emitting diode device, and only improves the growth process of the GaN based luminescent material, thus, the In component achieves the level to form In quantum dot, and a stress releasing layer is added. In this manner, in the precondition of not increasing the complexity of the device, the production cost for making white light light emitting diode can be basically reduced, and the light emitting efficiency and utilization can be increased, and the weakness of the white light light emitting diode which employs phosphor for conversion can be overcome, and the whole performance of white light light emitting diode can be improved.

Description

technical field [0001] The invention relates to a white light emitting diode epitaxial material and a preparation method thereof, in particular to an epitaxial material and a preparation method for a white light GaN light emitting diode chip that does not require phosphor powder conversion. Background technique [0002] As a white light source, white light-emitting diodes have many advantages such as high luminous efficiency, short response time, and long life. These advantages determine that it will partially replace the existing white light source. At present, there are three kinds of manufacturing methods for white light-emitting diodes that are generally accepted: (1) three red, green and blue light-emitting diodes that are separately produced or integrated in a single chip emit light at the same time, thereby mixing white light, (2) The red, green and blue three-color mixed phosphor powder wrapped in the outer layer is excited by the ultraviolet or purple light-emitting...

AI Technical Summary

Problems solved by technology

Among them, method (1) has not been applied due to cost and technical reasons; method (2) is a relatively simple and most promising white light-emitting diode manufacturing method, but has not yet found a suitable ultraviolet radiation resistance The encapsulating resin and the lack of efficient red phosphors have not been widely used; method (3) is a commercialized white light emitting diode manufacturing method at present, and the luminescence of white light emitting diodes is also caused by the lack of suitable red phosphors. The quality is limited, the white light spectrum obtained by mixing two colors of light is relatively simple, the luminous color temperature is high and the color rendering index is low

Although it has been commercialized, the color rendering index and color temperature of method (2) have been effectively improved after years of exploration, but its essence is the core problem of phosphor conversion, that is, the process of phosphor converting blue light into yellow light In the process, the inevitable Stokes frequency shift causes the problem of low luminous efficiency, which still restricts the further development of this method

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