Method for regulating ratio of Rashba and Dresselhaus spin-orbit coupling for semiconductor quantum well material

A spin-orbit coupling and quantum well technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of difficult to achieve continuous regulation, high difficulty and high cost, and achieve easy continuous regulation, low cost, and large regulation range. Effect

Inactive Publication Date: 2015-07-15
FUZHOU UNIV
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Problems solved by technology

However, these two methods are costly and difficult, and it is difficult to achieve continuous regulation

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  • Method for regulating ratio of Rashba and Dresselhaus spin-orbit coupling for semiconductor quantum well material
  • Method for regulating ratio of Rashba and Dresselhaus spin-orbit coupling for semiconductor quantum well material
  • Method for regulating ratio of Rashba and Dresselhaus spin-orbit coupling for semiconductor quantum well material

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Embodiment Construction

[0027] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0028] The present embodiment provides a method for controlling the Rashba and Dresselhaus spin-orbit coupling ratios of semiconductor quantum well materials, comprising the following steps:

[0029] Step S1: selecting qualified semiconductor quantum well materials;

[0030] Step S2: irradiating the semiconductor quantum well material with a beam of energy higher than the bandgap of the semiconductor quantum well material in step S1, while changing the temperature of the semiconductor quantum well material, and measuring Rashba and Dresselhaus of the semiconductor quantum well material Spin-orbit coupling ratio.

[0031] In this embodiment, the conditions described in step S1 are: the semiconductor quantum well material is a single crystal structure, the semiconductor quantum well material is not doped, and the magnitude of the well width of the semico...

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Abstract

The invention relates to a method for regulating the ratio of Rashba and Dresselhaus spin-orbit coupling for a semiconductor quantum well material. According to the method, an undoped high-quality semiconductor quantum well material is selected, light whose energy is higher than that of the band gap of the semiconductor quantum well is used for irradiating a sample, and meanwhile, the temperature of the semiconductor quantum well is changed, so that the ratio of the Rashba and Dresselhaus spin-orbit coupling in the quantum well is regulated. By means of the method, the ratio of Rashba and Dresselhaus spin-orbit coupling is regulated through the effect that the number of photoproduced excitons in the semiconductor quantum well is changed along with the temperature as well as the control effect of ionized excitons on a built-in electric field, the method is simple and easy, and the regulating effect is significant.

Description

technical field [0001] The invention relates to the field of semiconductor spin electronics, in particular to a method for regulating the Rashba and Dresselhaus spin-orbit coupling ratios of semiconductor quantum well materials. Background technique [0002] Due to the advantages of low energy consumption, high integration, and high data processing speed, spintronic devices have become a current research hotspot. The necessary conditions for the realization of spintronic devices are high spin polarization and effective control of spin states in the system. Spin-orbit coupling provides an all-electric method to control spin-orbit coupling, thus becoming an important research content of spintronics. Spin-orbit coupling can be divided into two types according to its origin, one is Dresselhaus spin-orbit coupling, which is caused by bulk inversion asymmetry (BIA), and the other is Rashba spin-orbit coupling. Coupling, caused by structure inversion asymmetry (SIA). These two s...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/00
CPCH01L31/18
Inventor 俞金玲陈涌海程树英赖云锋郑巧
Owner FUZHOU UNIV
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