11 results about "Double quantum" patented technology

The application discloses a kind of based on ensemble rare earth ions double quantum bit controlled gate construction method, it is related to quantum control technical field, it includes to double quantum bit frequency site selection, and respectively as control bit, target bit;Utilize the blocking effect generated by the dipole-dipole interaction between double quantum bits to construct controlled gate, including: to control bit apply light pulse driving control bit is from ground state transition to excited state;To target bit apply single quantum gate to drive its evolution, and apply compensation pulse;To control bit apply light pulse driving control bit from excited state de-excitation to ground state.The application utilizes the interaction of the light pulse and quantum system medium that can be optimized to produce arbitrary geometric quantum logic gate on target quantum bit, and simultaneously by using the blocking effect caused by dipole-dipole interaction, the evolution of target bit quantum bit can be constrained by control bit.

This invention discloses a highly self-assembled dual quantum dot / graphene heterojunction broadband memristor, its fabrication method, and its applications, belonging to the field of inorganic semiconductor technology. The method includes the following steps: mixing highly self-assembled cerium oxide quantum dot ink and PbS quantum dot ink with a graphene dispersion and stirring until homogeneous to form a uniformly loaded quantum dot / graphene dispersion; then using the quantum dot / graphene dispersion to construct a dual quantum dot / graphene heterojunction film on a silicon wafer surface, thus obtaining the dual quantum dot / graphene heterojunction broadband memristor. This invention overcomes the inherent limitations of the photoresponse range of single materials, achieving broadband optoelectronic memristor behavior in the ultraviolet to near-infrared bands. Simultaneously, the memristor of this invention exhibits rich synaptic plasticity under light pulse modulation, providing core support for constructing a novel integrated optoelectronic system for broadband sensing, storage, and processing. It possesses strong technical adaptability and industrialization prospects in cutting-edge fields such as bionic vision, optical neural networks, and intelligent sensing.

Embodiments of the present application provide a double quantum dot model simulation method and device, electronic equipment and storage medium. The scheme is as follows: a double quantum dot model is constructed as a to-be-simulated model; a Hamiltonian including a first energy is generated according to a performance parameter of the to-be-simulated model, wherein the first energy is a tunneling energy between electrons in the to-be-simulated model due to the spin-orbit coupling effect when the left and right quantum dots have opposite spins; based on the Hamiltonian, a target tunneling coefficient between source-drain electrodes and the left and right quantum dots in the to-be-simulated model is calculated; a target function relationship indicating a current in the to-be-simulated model is determined according to the target tunneling coefficient and a preset master equation, and the preset master equation is used to describe the dynamic change of the electron or hole distribution corresponding to the tunneling process in the to-be-simulated model; and the to-be-simulated model is simulated for drain current according to the target function relationship. Through the technical scheme provided by the embodiments of the present application, the drain current simulation of the double quantum dot model can be realized.

Arrays of optically trapped neutral atoms are a promising architecture for the realization of quantum computers. In order to run increasingly complex algorithms, it is advantageous to demonstrate high-fidelity and flexible gates between long-lived and highly coherent qubit states. In this work, we demonstrate a universal high-fidelity gate-set with individually controlled and parallel application of single-qubit gates and two-qubit gates operating on the ground-state nuclear spin qubit in arrays of tweezer-trapped Ytterbium-171 atoms. We utilize the long lifetime, flexible control, and high physical fidelity of our system to characterize native gates using single and two-qubit Clifford and symmetric subspace randomized benchmarking circuits with more than 200 CZ gates applied to one or two pairs of atoms. We measure our two-qubit entangling gate fidelity to be 99.72(3)% (99.40(3)%) with (without) post-selection. In addition, we introduce a simple and optimized method for calibration of multi-parameter quantum gates. These results represent important milestones towards executing complex and general quantum computation with neutral atoms.

The application relates to the technical field of semiconductors, in particular to a double-layer quantum well structure for differential detection and a preparation method. The double-layer quantum well structure comprises, from top to bottom, a top contact layer, a first quantum well region, an intermediate contact layer, a second quantum well region and a bottom contact layer; and a top electrode, an intermediate electrode and a bottom electrode arranged on the top contact layer, the intermediate contact layer and the bottom contact layer respectively. Thus, a three-terminal device structure is formed, in which the two quantum well regions share the same intermediate electrode. Under the structure, when the two quantum well regions generate photoelectric current under light, the intermediate electrode can simultaneously obtain the current signals of the two quantum well regions, and by configuring the voltage applied on different electrodes, the intermediate electrode can output differential current, thereby providing a hardware basis for realizing differential detection.

This disclosure relates to a rare metal-doped double quantum layer modified biosensor and its fabrication method, belonging to the field of photoanode thin film technology. The biosensor includes: a conductive substrate; and a photoanode thin film layer and an aptamer probe layer stacked on one side of the conductive substrate; the photoanode thin film layer includes a BiVO4 thin film layer, a Co-doped TiO2 quantum layer thin film layer, and a Rh-doped SrTiO3 quantum layer thin film layer sequentially disposed thereon. The method includes: 1. depositing a BiVO4 thin film layer on the conductive substrate; 2. alternately depositing TiO2 thin films and CoO2 thin films on the BiVO4 thin film layer. X 1. Form a Co-doped TiO2 quantum layer thin film; 2. Form a Rh-doped SrTiO3 quantum layer thin film; 3. Coat an aptamer probe solution to obtain a biosensor.

This invention discloses a method for improving the thermoelectric performance of an AB ring through lateral coupling and optical field irradiation. The method includes: first, coupling two quantum dots QD1 and QD2 into a dual-quantum-dot structure via a tunnel junction; spatially confining the dual-quantum-dot structure; coupling the dual quantum dots into the AB ring via the tunnel junction; placing left and right electrodes on opposite sides of the AB ring structure; applying thermal radiation to create a temperature gradient between the left and right electrodes; injecting electrons into the AB ring electrodes, causing electron transport under the influence of the lateral coupling of the dual quantum dots and the temperature gradient; and applying an adjustable optical field to the dual-quantum-dot structure. By optimizing the tunneling coupling strength between the quantum dots and adjusting the optical field frequency, the thermoelectric transport characteristics of the system are synergistically controlled, thereby obtaining enhanced spin thermoelectric potential and spin ZT coefficient. This invention optimizes thermoelectric performance by increasing the tunneling coupling strength between quantum dots and improving the optical field frequency, providing a foundation for designing fast-response, high-efficiency, and low-energy-consumption thermoelectric devices.

A quantum device is disclosed having an LC resonator circuit for performing qubit measurement or readout. The device comprises a silicon layer (601), a dielectric layer (603) disposed upon and forming a functional interface with the silicon layer (601), a first metallic region (614) disposed upon the dielectric layer 603, and a second metallic region (624) disposed upon the dielectric layer 603 and laterally separated from the first metallic region (614). The first and second metallic regions (614, 624) are arranged to be electrically connected such that a double quantum dot, forming a qubit having a first state and a second state, can be induced beneath the first and second metallic regions (614, 624) at the functional interface. The double quantum dot provides a capacitor C1 in the LC resonator circuit and the capacitance of the double quantum dot is dependent on the state of the qubit. The first metallic region (614) provides an inductor L1 in the LC resonator circuit, and the resonant frequency of the LC resonator circuit is dependent on the state of the qubit such that the state of the qubit can be measured or inferred.

One-dimensional and two-dimensional arrays of qubits are disclosed. The one-dimensional array includes two or more double-quantum dots embedded in silicon, the two or more double-quantum dots arranged in an Echelon formation, such that the distance between the two or more double-quantum dots is approximately 40 nm and the distance between the two quantum dots in each double-quantum dot is approximately 12 nm; two or more reservoirs to load electrons to the corresponding two or more double-quantum dots to form singlet-triplet qubits in each double-quantum dot; and two or more gates for controlling the formed singlet-triplet qubits. The two-dimensional array of qubits includes two or more layers of vertically-stacked one-dimensional arrays of qubits.

A circuit for reading out a state of a quantum bit 100 having a singlet spin state and a triplet spin state, comprising: a double quantum dot 101 forming the quantum bit 100, the double quantum dot 101 comprising a first quantum dot 105 and a second quantum dot 106. The circuit comprises: a cascade quantum dot 102 capacitively coupled to the second quantum dot 106; a charge reservoir 103 tunnel coupled to the cascade quantum dot 102; and a readout circuit 104 coupled to the reservoir 103. When a charge carrier tunnels between the first quantum dot 105 and the second quantum dot 106, the charge carrier tunnels between the cascade quantum dot 102 and the charge reservoir 103. A frequency source connected to a gate electrode or the charge reservoir 103 is configured to apply an alternating electrical potential 111 of a first frequency h, thereby causing a cyclic tunneling of the charge carrier only when the quantum bit is in the singlet state, which is detectable by the resonator circuit 104.