48 results about "Double quantum" patented technology

The invention discloses an underwater magnetic field measuring device based on a diamond NV color center. The underwater magnetic field measuring device comprises a diamond NV color center module, an incident laser excitation module, a multi-path optical coupling module, a microwave excitation module, a fluorescence acquisition and photoelectric conversion module, a signal processing and control module and a magnetic field module, the multi-path optical coupling module is used for dividing an optical fiber into multiple paths and collecting fluorescence generated by the diamond block; the microwave excitation module is used for switching between two single-quantum resonance frequencies to drive an NV color center to realize double-quantum DQ reading; and the signal processing and control module comprises an FPGA (Field Programmable Gate Array) processing unit of a field programmable logic array chip. According to the invention, a dual-quantum DQ working point of a diamond NV color center is used as a measurement channel, common-mode influence of D is removed through differential measurement, the problem of D drift caused by temperature drift, stress and material aging is physically and obviously inhibited, and the device can still realize ultrahigh-sensitivity measurement in a complex underwater environment.

The application discloses a kind of based on ensemble rare earth ions double quantum bit controlled gate construction method, it is related to quantum control technical field, it includes to double quantum bit frequency site selection, and respectively as control bit, target bit;Utilize the blocking effect generated by the dipole-dipole interaction between double quantum bits to construct controlled gate, including: to control bit apply light pulse driving control bit is from ground state transition to excited state;To target bit apply single quantum gate to drive its evolution, and apply compensation pulse;To control bit apply light pulse driving control bit from excited state de-excitation to ground state.The application utilizes the interaction of the light pulse and quantum system medium that can be optimized to produce arbitrary geometric quantum logic gate on target quantum bit, and simultaneously by using the blocking effect caused by dipole-dipole interaction, the evolution of target bit quantum bit can be constrained by control bit.

This invention discloses a method and device structure for improving the electrical transport properties of etched graphene quantum dots, belonging to the field of low-temperature transport testing technology. The method includes the following steps: fabricating etched graphene quantum dot devices; performing preliminary electrical transport characterization by cooling; and undergoing several cycles of "sample electrode grounding protection – heating to above 200K or room temperature – cooling again – electrical transport characterization" to improve the electrical transport properties of the device, enabling subsequent observation and manipulation of the quantum dot's fine charge stability map. The optimized method of this invention, through several heating and cooling thermal cycles, successfully adjusts the coulomb blocking region of the graphene quantum dots from hundreds of volts towards zero, facilitating the application of a gate voltage. Furthermore, the charge stability map of the two quantum dots is significantly optimized and improved, greatly increasing the yield of etched graphene quantum dot devices. In addition, the optimized method of this invention is simple to operate and has significant effects, making it suitable for widespread application.

The present disclosure relates to an apparatus and method for quantum computing using a plurality of neutral atoms in an optical trap array wherein a first internal state of the neutral atoms is used as a qubit ground state 0gt; the second internal state is used as a quantum bit excitation state 1gt; . According to the present disclosure, a local single qubit gate operation can be performed on a qubit, comprising locally and selectively irradiating with a qubit addressing laser at a first qubit addressing laser frequency, which is prepared as a qubit ground state 0gt; and a quantum bit excited state 1gt; a superposition state sgt; the quantum bit is used for causing a quantum bit ground state 0gt; and a quantum bit excited state 1gt; and the differential stark displacement is realized. Furthermore, a local dual qubit gate operation may be performed on the pair of qubits, including locally and selectively irradiating with a qubit addressing laser at a second qubit addressing laser frequency prepared as a qubit ground state 0gt; a pair of qubits for a third internal state cgt, preferably via neutral atoms; coupling the quantum bit pair to a Rydberg state rgt of a neutral atom; a third internal state cgt; the method can be used as a quantum bit ground state 0gt; a Rydberg state rgt is obtained; and the intermediate state of two-photon transition is realized.

A method is provided, including: applying a magnetic field according to a two-qubit gate operation performed with a quantum device; transmitting a voltage signal to a gate structure, arranged above first and second quantum dots in the quantum device, to generate a coupling signal that includes a first sine squared wave; and performing, by the magnetic field and the coupling signal, the two-qubit gate operation to the first and second qubits in the first and second quantum dots.

Techniques are provided for mediating interactions (e.g., long range interactions) between quantum bits to facilitate quantum computing operations such as two-qubit gate operations. A device comprises a first quantum bit, a second quantum bit, and a coupling bus connecting the first quantum bit and the second quantum bit. The coupling bus comprises a plurality of transmission line resonators which are coupled in series, and at least one tunable inductive coupler to control a coupling between a first transmission line resonator and a second transmission line resonator of the plurality of transmission line resonators.

The invention belongs to the technical field of organic field effect transistors, and particularly relates to a high-mobility field effect transistor based on an organic double-quantum well structure and a preparation method of the high-mobility field effect transistor. The high-mobility field effect transistor comprises a grid electrode, an insulating layer, an organic semiconductor layer, a source electrode and a drain electrode, the insulating layer is located between the grid electrode and the organic semiconductor layer, an OTS modification layer is arranged between the insulating layer and the organic semiconductor layer, and the organic semiconductor layer is composed of a C8-BTBT layer / (Pentaene layer / C8-BTBT layer) n and n = 2 in the direction from the grid electrode to the source electrode and the drain electrode. According to the organic double-quantum well composed of C8-BTBT and pentacene, a potential well is formed by alternating different energy gap materials, carriers are limited in a narrow energy band region, scattering is reduced, directional transportation is promoted, and the mobility of the transistor is greatly improved.

The embodiment of the invention provides a frequency determination method and device, electronic equipment and a storage medium. According to the scheme, the method comprises the following steps: obtaining a first corresponding relation between coupler frequencies and leakage rates according to operation of at least one resonance type double-quantum logic gate on a first quantum bit and a second quantum bit in a target system under different coupler frequencies; based on the first corresponding relation, the coupler frequency corresponding to the lowest leakage rate is selected as the target frequency, and the target frequency is the frequency of a control signal applied to the adjustable coupler when the first quantum bit and the second quantum bit execute the resonance type double-quantum logic gate operation. Through the technical scheme provided by the embodiment of the invention, the frequency of the control signal applied to the adjustable coupler during the execution period of the resonance type double-quantum logic gate can be determined, so that an observer error is effectively inhibited, and the fidelity of quantum calculation is improved.

This invention discloses a highly self-assembled dual quantum dot / graphene heterojunction broadband memristor, its fabrication method, and its applications, belonging to the field of inorganic semiconductor technology. The method includes the following steps: mixing highly self-assembled cerium oxide quantum dot ink and PbS quantum dot ink with a graphene dispersion and stirring until homogeneous to form a uniformly loaded quantum dot / graphene dispersion; then using the quantum dot / graphene dispersion to construct a dual quantum dot / graphene heterojunction film on a silicon wafer surface, thus obtaining the dual quantum dot / graphene heterojunction broadband memristor. This invention overcomes the inherent limitations of the photoresponse range of single materials, achieving broadband optoelectronic memristor behavior in the ultraviolet to near-infrared bands. Simultaneously, the memristor of this invention exhibits rich synaptic plasticity under light pulse modulation, providing core support for constructing a novel integrated optoelectronic system for broadband sensing, storage, and processing. It possesses strong technical adaptability and industrialization prospects in cutting-edge fields such as bionic vision, optical neural networks, and intelligent sensing.

This application discloses a method and apparatus for constructing a quantum entangled logic gate. The method involves performing preset operations on the spin-related shift of each phonon mode of the ions in the segment and the phase of each pair of accumulated two-qubits between segments to obtain a target correlation function. This target correlation function is then converted into a target function containing a preset vector. The introduced preset vector improves the computational speed of the phase-modulated quantum entangled logic gate. After solving for the local optimal solution of the target function, the logic gate is constructed based on the fidelity of the logic gate corresponding to the local optimal solution. This ensures that the constructed logic gate meets the fidelity requirements, thus realizing a quantum entangled logic gate applicable to large-scale ion arrays.

A gate sequence for performing quantum calculations may be generated by replacing an AshN gate with a particular dual qubit gate. The gate sequence may be generated by a classical computing system. The gate sequence generation process may include identifying, in a gate sequence, a dual qubit gate to be applied to two qubits of a quantum computing system. The dual qubit gate may be associated with Weyl coordinates x, y, and z. By utilizing the characteristics of the two qubits and Weyl coordinates, an AshN gate which is locally equivalent to the double-qubit gate can be generated. The AshN gate may be included in a gate sequence in place of the identified dual qubit gate. The gate sequence may then be applied to a quantum computing system to perform quantum computing.

To relax a quantum error in a quantum circuit using a non-Clifford gate.SOLUTION: The information processor 10 generates second quantum-bit circuits 3a, 3c,. by replacing the first two quantum-bit gates 4a to 7a in the first quantum-bit circuit 3 with a first equivalent circuit 7 including a second two quantum-bit gate 4b that performs a gate operation of phase-rotation by a first rotation angle. The information processor 10 replaces the first 2-qubit gates 3a to 3c in the first circuit 3 with a second equivalent circuit 8 including a third 2-qubit gate 8a that performs a gate operation of phase rotation of a second rotation angle to generate third circuits 5a, 5b,. The information processor 10 makes the quantum computer 1 execute the second quantum circuits 4a, 4b,. and the third quantum circuits 5a, 5b,., and outputs the average of the executed results as the executed result of the first quantum circuit 3.SELECTED DRAWING: Figure 1

A quantum processing unit comprising : rows comprising first qubits and second qubits, the first qubits and the second qubits being arranged alternatingly within each row, the first qubits and the second qubits forming columns, respectively; a first source configured to drive the first qubits with a first Rabi frequency; a second source configured to drive the second qubits with a second Rabi frequency, wherein two adjacent qubits within each row are subject to a first two-qubit interaction; one in every two columns of first qubits comprises a first special qubit provided between two adjacent second qubits, the first special qubit being such that it is driven with at least twice the first Rabi frequency by the first source, and the first special qubit being subject to a second two-qubit interaction with respect to each of the two adjacent second qubits, and one in every two columns of second qubits contains one second qubit, named second special qubit, such that it is driven with at least twice the second Rabi frequency by the second source.

Embodiments of the present application provide a double quantum dot model simulation method and device, electronic equipment and storage medium. The scheme is as follows: a double quantum dot model is constructed as a to-be-simulated model; a Hamiltonian including a first energy is generated according to a performance parameter of the to-be-simulated model, wherein the first energy is a tunneling energy between electrons in the to-be-simulated model due to the spin-orbit coupling effect when the left and right quantum dots have opposite spins; based on the Hamiltonian, a target tunneling coefficient between source-drain electrodes and the left and right quantum dots in the to-be-simulated model is calculated; a target function relationship indicating a current in the to-be-simulated model is determined according to the target tunneling coefficient and a preset master equation, and the preset master equation is used to describe the dynamic change of the electron or hole distribution corresponding to the tunneling process in the to-be-simulated model; and the to-be-simulated model is simulated for drain current according to the target function relationship. Through the technical scheme provided by the embodiments of the present application, the drain current simulation of the double quantum dot model can be realized.

Aspects of the present disclosure relate to systems and methods in quantum information processing (QIP). The method includes determining a temporal profile of a trapping potential of an ion trap configured to trap a first trapped ion and a second trapped ion of an array of trapped ions for QIP and obtaining at least one characteristic of a first optical beam that is applied to the first trapped ion. The method includes synchronizing the at least one characteristic of the first optical beam and the temporal profile of the trapping potential and simultaneously applying the first optical beam to the first trapped ion based on the at least one characteristic and the trapping potential having the temporal profile to the ion trap. Optical beams including the first optical beam are applied to the first trapped ion and the second trapped ion.

The present disclosure provides a mounting method in which is used a linear optical circuit for quantum measurement that is a so-called pairwise fusion gate (PFG) having a function for stochastically projecting two inputted qudits onto the quantum entangled state of a two-qubit subspace. Specifically, provided is a pairwise fusion gate characterized by comprising a linear optical element and a photon detector, the pairwise fusion gate furthermore being characterized in that: the linear optical element and the photon detector are configured so that an input which has two d-dimensional qudits defined using d-rail coding (where d is an integer equal to or greater than 3), and in which there is no quantum entanglement between the two qudits, is stochastically projected onto a quantum entanglement state in a two-qubit subspace; and measurement results from the photon detector are used in determining the specific two-qubit subspace in which the projection onto the quantum entanglement state has been made.

Aspects of the present disclosure relate generally to systems and methods for use in the implementation and / or operation of quantum information processing (QIP) systems, and more particularly, to a fast single-mode spectroscopy technique that may be used in trapped-ion QIP systems. A method is described that includes performing a first measurement scan (full scan) across all motional modes of an ion chain in a trap followed by a second measurement scan on a single motional mode of the motional modes (single-mode scan). The second measurement scan determines a frequency shift associated with the single motional mode, which is applied to adjust the frequencies of all the motional modes. An implementation of two-qubit gates for quantum computations is based on the adjusted frequencies. A quantum computer or QIP system is also described that is configured to implement and perform the method described above.

The present disclosure relates to a method and apparatus for generating a quantum state preparation circuit, a quantum chip, an electronic device, a storage medium, and a computer program product. The method includes: determining a target qubit set with a binary tree restriction and applying a single qubit flip gate to a first target sub-node qubit; applying a two-qubit phase offset gate between sub-node qubits; applying a two-qubit SWAP gate between the first target sub-node qubit and a second target sub-node qubit; taking the sub-node qubits as the root node qubit and iteratively performing until the sub-node qubits are leaf node qubits; and applying the two-qubit phase offset gate with a path restriction between leaf node qubits and applying a single qubit phase offset gate to the leaf node qubits to obtain a quantum state preparation circuit.

The invention discloses a method for improving the electrical transport characteristic of etched graphene quantum dots and a device structure, and belongs to the technical field of low-temperature transport testing. The method comprises the following steps: manufacturing an etched graphene quantum dot device; carrying out preliminary electric transportation characterization by cooling; through several times of circular processing of sample electrode grounding protection-heating to more than 200K or room temperature-re-cooling-electrical transport characterization, the electrical transport property of the device is improved, and subsequent quantum dot fine charge stability diagram observation and control can be carried out. According to the optimization method, the coulomb blocking interval of the graphene quantum dots is successfully and gradually adjusted to the zero point from hundred volts through multiple times of temperature rising and falling thermal cycle treatment, grid voltage is conveniently applied, the double-quantum-dot charge stability diagram is obviously optimized and improved, and the yield of etched graphene quantum dot devices is greatly improved. In addition, the optimization method is easy to operate, obvious in effect and suitable for popularization.

A method for qubit initialization, comprising the steps of: (i) setting a dual qubit state of a pair of spin qubits to an arbitrary state; (ii) verifying a qubit state associated with the pair of spin qubits for a corresponding target state; and (iii) in response to determining that the qubit state is not the target state at step (ii), repeating steps (i) to (ii) until the qubit state is determined to be the target state. Determining the qubit state as the target state includes performing one or more Follicle spin blocking (PSB) checks and at least one dual qubit state transition operation on the pair of spin qubits.

The invention discloses a double-quantum-bit controlled gate construction method based on ensemble rare earth ions, and relates to the technical field of quantum control, and the method comprises the steps: carrying out the site selection of double-quantum-bit frequency, and taking the double-quantum-bit frequency as a control bit and a target bit; a controlled gate is constructed by using a blocking effect generated by dipole-dipole interaction between double quantum bits. The method comprises the following steps: applying an optical pulse to a control bit to drive the control bit to transition from a ground state to an excited state; applying a single quantum gate to the target bit to drive the target bit to evolve, and applying a compensation pulse; and applying an optical pulse to the control bit to drive the control bit to be de-excited from the excited state to the ground state. According to the invention, any geometric quantum logic gate is generated on a target quantum bit by utilizing the interaction of optimizable light pulses and a quantum system medium, and meanwhile, the evolution of the target bit quantum bit can be restrained by a control bit by utilizing a blocking effect caused by dipole-dipole interaction.

The application discloses a kind of efficient data processing method, equipment and medium based on quantum computing, it is related to quantum computing technical field, including, rewrite in the cross-coupling double quantum gate in the quantum job to be executed, local computing section, bridge section and recycling section are divided, bridge execution table and segmented quantum circuit package are generated;According to bridge execution table and segmented quantum circuit package configuration working quantum bit, bridge quantum bit, recycling quantum bit and classical control bus, implement midway measurement and quantum bit reset, obtain bridge control word and quantum bit multiplexing state;Bridge control word and quantum bit multiplexing state are carried out remote continuation, pali frame inheritance and line cutting, and output local result package and bridge record table.The application keeps the continuous execution ability of quantum job under limited coupling topology, reduces the line expansion and scheduling burden brought by cross-coupling gate, enhances the structure multiplexing capability and overall data processing efficiency when similar quantum job is repeatedly processed.

Techniques are provided for mediating interactions (e.g., long range interactions) between quantum bits to facilitate quantum computing operations such as two-qubit gate operations. A device comprises a first quantum bit, a second quantum bit, and a coupling bus connecting the first quantum bit and the second quantum bit. The coupling bus comprises a plurality of transmission line resonators which are coupled in series, and at least one tunable inductive coupler to control a coupling between a first transmission line resonator and a second transmission line resonator of the plurality of transmission line resonators.

Arrays of optically trapped neutral atoms are a promising architecture for the realization of quantum computers. In order to run increasingly complex algorithms, it is advantageous to demonstrate high-fidelity and flexible gates between long-lived and highly coherent qubit states. In this work, we demonstrate a universal high-fidelity gate-set with individually controlled and parallel application of single-qubit gates and two-qubit gates operating on the ground-state nuclear spin qubit in arrays of tweezer-trapped Ytterbium-171 atoms. We utilize the long lifetime, flexible control, and high physical fidelity of our system to characterize native gates using single and two-qubit Clifford and symmetric subspace randomized benchmarking circuits with more than 200 CZ gates applied to one or two pairs of atoms. We measure our two-qubit entangling gate fidelity to be 99.72(3)% (99.40(3)%) with (without) post-selection. In addition, we introduce a simple and optimized method for calibration of multi-parameter quantum gates. These results represent important milestones towards executing complex and general quantum computation with neutral atoms.

Techniques are provided for mediating interactions (e.g., long range interactions) between quantum bits to facilitate quantum computing operations such as two-qubit gate operations. A device comprises a first quantum bit, a second quantum bit, and a coupling bus connecting the first quantum bit and the second quantum bit. The coupling bus comprises a plurality of transmission line resonators which are coupled in series, and at least one tunable inductive coupler to control a coupling between a first transmission line resonator and a second transmission line resonator of the plurality of transmission line resonators.

A quantum device having an LC resonator circuit for performing a qubit measurement or readout is disclosed. The device comprises a silicon layer (601), a dielectric layer (603) disposed on the silicon layer (601) and forming a functional interface with the silicon layer (601), a first metal region (614) disposed on the dielectric layer 603, and a second metal region 624 disposed on the dielectric layer 603 and laterally separated from the first metal region (614). The first and second metal regions (614, 624) are arranged to be electrically connected such that a double quantum dot having a first state and a second state of a qubit can be induced to form at the functional interface under the first and second metal regions (614, 624). The double quantum dot provides a capacitor Cl in the LC resonator circuit, the capacitance of the double quantum dot depending on the state of the qubit. The first metal region (614) provides an inductor LI in the LC resonator circuit, the resonance frequency of the LC resonator circuit depending on the state of the qubit, such that the state of the qubit can be measured or inferred.

The application relates to the technical field of semiconductors, in particular to a double-layer quantum well structure for differential detection and a preparation method. The double-layer quantum well structure comprises, from top to bottom, a top contact layer, a first quantum well region, an intermediate contact layer, a second quantum well region and a bottom contact layer; and a top electrode, an intermediate electrode and a bottom electrode arranged on the top contact layer, the intermediate contact layer and the bottom contact layer respectively. Thus, a three-terminal device structure is formed, in which the two quantum well regions share the same intermediate electrode. Under the structure, when the two quantum well regions generate photoelectric current under light, the intermediate electrode can simultaneously obtain the current signals of the two quantum well regions, and by configuring the voltage applied on different electrodes, the intermediate electrode can output differential current, thereby providing a hardware basis for realizing differential detection.

This disclosure provides a quantum dot light conversion film, its preparation method, and a backlight module containing the same. The quantum dot light conversion film includes a base film, a first quantum dot film layer, a second quantum dot film layer, and an encapsulation film layer sequentially contacted together. The base film includes a barrier film layer and a PET film layer, and the barrier properties of the base film are WVTR ≤ 2 g / m². 2 The first quantum dot film layer comprises a first quantum dot and a first resin, the second quantum dot film layer comprises a second quantum dot and polyethylene terephthalate, and the encapsulation film layer comprises a second resin and inorganic oxide particles. The first and second quantum dots are selected from one or both of red and green quantum dots. The combined mass fraction of red and green quantum dots in the first quantum dot film layer is 0.01-1%. The dual quantum dot film layer structure can reduce the quantum dot content of the first quantum dot film layer, reduce the color dot fluctuation of this layer, and make it easier to produce products with stable color dot batches.

This disclosure relates to a rare metal-doped double quantum layer modified biosensor and its fabrication method, belonging to the field of photoanode thin film technology. The biosensor includes: a conductive substrate; and a photoanode thin film layer and an aptamer probe layer stacked on one side of the conductive substrate; the photoanode thin film layer includes a BiVO4 thin film layer, a Co-doped TiO2 quantum layer thin film layer, and a Rh-doped SrTiO3 quantum layer thin film layer sequentially disposed thereon. The method includes: 1. depositing a BiVO4 thin film layer on the conductive substrate; 2. alternately depositing TiO2 thin films and CoO2 thin films on the BiVO4 thin film layer. X 1. Form a Co-doped TiO2 quantum layer thin film; 2. Form a Rh-doped SrTiO3 quantum layer thin film; 3. Coat an aptamer probe solution to obtain a biosensor.

A method for performing quantum computing in a qubit processor is provided, the method comprising the steps of: configuring a first position (843) in a first position set (802) to perform (902) a first single-qubit operation; configuring a second position (844) in the first position set (802) to perform (902) a second single-qubit operation; configuring a first position (845) and a second position (846) in a second position set (803) to perform (906) a two-qubit interaction; and receiving at time t1, at the first position (843) in the first position set (802) (901) First qubit (831); at time t1, receive (901) second qubit (832) at the second position (844) in the first position set (802); wherein both the first and second qubits are provided in a first qubit group comprising n qubits, where n>2; perform (902) first single-qubit operation on the state of the first qubit (831) at the first position (843) in the first position set (802); perform (902) first single-qubit operation on the state of the second qubit (832) at the second position (844) in the first position set (802). (902) Second single-qubit operation; transferring (903) the first qubit (831) from the first position (843) in the first position set (802) to the first position (845) in the second position set (803); transferring (903) the second qubit (832) from the second position (844) in the first position set (802) to the second position (846) in the second position set (803); performing (906) two-qubit interaction between the first qubit (831) and the second qubit (832) in the second position set (803); transferring the first qubit (831) from the first position (843) in the first position set (802) to the second position (845) in the second position set (803); A qubit is transferred from a first position in a second set of positions to a first position in a readout set; a second qubit is transferred from a second position in a second set of positions to a second position in a readout set; at time t2, a first qubit of a second set of qubits is received at a first position in a first set of positions, where t2 > t1; at time t2, a second qubit of a second set of qubits is received at a second position in a first set of positions; the state of the first qubit at the first position in the readout set is read; and the state of the second qubit at the second position in the readout set is read.