Deep ultraviolet light-emitting element and preparation method thereof

Abstract

The invention provides a deep ultraviolet light-emitting element and a preparation method thereof. The deep ultraviolet light-emitting element sequentially comprises a substrate, an n-type semiconductor layer, a quantum well layer and a p-type semiconductor layer from bottom to top, wherein the quantum well layer comprises a doped quantum well layer and a non-doped quantum well layer located on the doped quantum well layer. By arranging the double quantum well structures, the luminous efficiency and intensity are improved, and due to the fact that the non-doped quantum well layer is arranged between the doped quantum well layer and the p-type semiconductor layer, the phenomenon of luminous decay caused by migration of Mg and Si under the condition of high temperature or long-term use can be reduced, and the luminous decay within 1000 hours is reduced from 30% to 10% or below.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a deep ultraviolet light-emitting element and a preparation method thereof. Background technique [0002] The deep ultraviolet light-emitting element has a wavelength range of 200-300nm. The deep ultraviolet light emitted can interrupt the DNA or RNA of viruses and bacteria, and directly kill viruses and bacteria. It can be widely used in air purification, tap water sterilization, household air conditioning sterilization, Auto air conditioner sterilization and other sterilization fields. [0003] The p-type semiconductor layer of the deep ultraviolet light emitting element uses AlGaN with high Al composition. As the Al composition increases, the doping and ionization efficiency of Mg decreases, resulting in the hole concentration of the deep ultraviolet light emitting element generally lower than 1E17 cm -2 , while the n-type semiconductor layer is doped with Si, the dopi...

AI Technical Summary

Problems solved by technology

The large difference in concentration and uneven distribution of electrons and holes in deep ultraviolet light-emitting elements are important reasons for their luminous efficiency to be generally lower than 5%.

In addition, the distance between the Si-doped layer of the quantum well layer and the Mg-doped layer of the p-type semiconductor layer is too close, which will easily lead to the migration and diffusion of Mg and Si elements under high temperature or long-term use and mix, thus causing aging light attenuation.

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