Preparation method of double-quantum dot modified flower-like three-dimensional graphene and photocatalytic material

A technology of double quantum dots and graphene, which is applied in the fields of photoelectric catalysis and hydrogen production, can solve the problems of high photo-generated electron-hole pair recombination rate, low utilization rate of sunlight, and small specific surface area of ​​nanoparticle structure, so as to reduce the recombination rate. efficiency, high light sensitivity, strong corrosion resistance and light stability

Active Publication Date: 2018-07-06
XIFENG 2D FUJIAN MATERIAL TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, traditional TiO 2 There are still the following major disadvantages, (1) hydrophobicity; (2) the specific surface area of ​​the nanoparticle structure is small; (3) the recombination rate of photogenerated electron-hole pairs is high; (4) the absorption wavelength is less than 387nm, resulting in sunlight low utilization

Method used

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  • Preparation method of double-quantum dot modified flower-like three-dimensional graphene and photocatalytic material
  • Preparation method of double-quantum dot modified flower-like three-dimensional graphene and photocatalytic material
  • Preparation method of double-quantum dot modified flower-like three-dimensional graphene and photocatalytic material

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preparation example Construction

[0026] Such as figure 1 As shown, the present invention provides double quantum dots modified flower-shaped three-dimensional graphene (Au@TiO 2 The preparation method of @3DGFs) includes steps:

[0027] S101: Preparation of three-dimensional graphene on foam nickel;

[0028] Using foamed nickel as a template for the three-dimensional graphene growth support, put the cut into pieces of foamed nickel into a quartz tube furnace; make the nickel foam material in Ar (300-800sccm) and H 2 (100-400sccm) in a tube furnace under the environment, heat to 800-1100℃, and anneal for 5-30min to clean and remove the oxide layer on the surface of the foam nickel; then the CH with a flow rate of 1-20sccm 4 Pass into the reaction tube furnace under a certain ambient pressure to make it equivalent to the concentration of 0.1 vol%-2 vol% of the total gas flow. After the reaction gas reacts for 3-10min, the sample is in Ar (300-800sccm) and H 2 (100-400sccm), rapidly cool to room temperature at a rate ...

Embodiment 1

[0035] Prepare three-dimensional graphene on foam nickel by chemical vapor deposition method;

[0036] Using foamed nickel as a template for the three-dimensional graphene growth support, put the cut into pieces of foamed nickel into a quartz tube furnace; make the nickel foam material in Ar (500sccm) and H 2 (200sccm) in a tube furnace under the environment, heat it to 1000℃, and anneal for 10min to clean and remove the oxide layer on the surface of the foam nickel; then the CH with a flow rate of 5sccm 4 Pass into a reaction tube furnace under a certain ambient pressure to make it equivalent to a concentration of 0.7 vol% of the total gas flow. After the reaction gas reacts for 5 minutes, the sample is in Ar (500sccm) and H 2 (200sccm) and rapidly cool to room temperature at a rate of 200°C / min in an environment of (200sccm); that is, a three-dimensional graphene sample on the foamed nickel surface is obtained;

[0037] Preparation of electrodeposition precursor solution containin...

Embodiment 2

[0043] S101, using chemical vapor deposition to prepare three-dimensional graphene on foam nickel;

[0044] Using foamed nickel as a template for the three-dimensional graphene growth support, put the cut into pieces of foamed nickel into a quartz tube furnace; make the nickel foam material in Ar (500sccm) and H 2 (200sccm) in a tube furnace under the environment, heat it to 1000℃, and anneal for 10min to clean and remove the oxide layer on the surface of the foam nickel; then the CH with a flow rate of 5sccm 4 Pass into a reaction tube furnace under a certain ambient pressure to make it equivalent to a concentration of 0.7 vol% of the total gas flow. After the reaction gas reacts for 5 minutes, the sample is in Ar (500sccm) and H 2 (200sccm) and rapidly cool down to room temperature at a rate of 250°C / min; obtain a three-dimensional graphene sample on the foamed nickel surface;

[0045] S102, preparing an electrodeposition precursor solution containing Au;

[0046] First, 300 μL of ...

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Abstract

The invention discloses a preparation method of a double-quantum dot modified flower-like three-dimensional graphene and a photocatalytic material. Specifically, the method includes: preparing three-dimensional graphene on foam nickel; preparing an electrodeposition precursor solution containing Au; and preparing an Au@TiO2@3DGFs composite material by electrochemical deposition: putting a three-dimensional graphene into the precursor solution to serve as a working electrode for deposition of TiO2 and noble metal Au double quantum dots, thus forming flower-like three-dimensional graphene with Au and TiO2 double quantum dots evenly distributed on the surface in the electrochemical deposition process. The three-dimensional graphene electron-hole pair prepared by the method provided by the invention has the characteristics of low recombination rate, high photoelectrocatalytic activity, and high sunlight utilization.

Description

Technical field [0001] The invention relates to the technical field of photoelectric catalysis and hydrogen production, and in particular to a preparation method and photocatalytic material of double quantum dots modified flower-shaped three-dimensional graphene. Background technique [0002] Hydrogen energy is considered an ideal clean and renewable energy because of its abundant resources. So far, most traditional hydrogen production methods require a large amount of energy, resulting in high production costs and low efficiency. Among the various possible hydrogen production methods, photoelectric catalysis (PEC) has the advantages of low energy loss and low electron-hole recombination rate, and has proven to be a promising hydrogen production technology. [0003] Among them, titanium dioxide (TiO 2 ) Due to low cost, corrosion resistance, stable photocatalysis under irradiation, good photocatalytic oxidation ability and high quantum efficiency, it is a good photocatalytic mater...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/52B01J21/06B01J21/18B01J35/02B01J37/34C25B1/04C25B11/06
CPCB01J21/063B01J21/18B01J23/52B01J35/004B01J37/348C25B1/04C25B11/04Y02E60/36
Inventor 许志
Owner XIFENG 2D FUJIAN MATERIAL TECH CO LTD
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