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Preparation method and photocatalytic material of flower-like three-dimensional graphene decorated with double quantum dots

A technology of double quantum dots and graphene, which is applied in the field of photoelectrocatalysis and hydrogen production, can solve the problems of small specific surface area of ​​nanoparticle structure, high recombination rate of photogenerated electron-hole pairs, and low utilization rate of sunlight, so as to reduce recombination High efficiency, strong corrosion resistance and light stability, high light sensitivity

Active Publication Date: 2020-12-18
XIFENG 2D FUJIAN MATERIAL TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, traditional TiO 2 There are still the following major disadvantages, (1) hydrophobicity; (2) the specific surface area of ​​the nanoparticle structure is small; (3) the recombination rate of photogenerated electron-hole pairs is high; (4) the absorption wavelength is less than 387nm, resulting in sunlight low utilization

Method used

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  • Preparation method and photocatalytic material of flower-like three-dimensional graphene decorated with double quantum dots
  • Preparation method and photocatalytic material of flower-like three-dimensional graphene decorated with double quantum dots
  • Preparation method and photocatalytic material of flower-like three-dimensional graphene decorated with double quantum dots

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preparation example Construction

[0026] Such as figure 1 As shown, the present invention provides double quantum dots modified flower-like three-dimensional graphene (Au@TiO 2 The preparation method of @3DGFs) comprises steps:

[0027] S101: preparing three-dimensional graphene on nickel foam;

[0028] Adopt nickel foam as three-dimensional graphene growth support template, the foam nickel that will be cut into fragments is put into quartz tube furnace; Make nickel foam material in Ar(300-800sccm) and H 2 (100-400sccm) in a tube furnace heated to 800-1100° C., and annealed for 5-30 minutes to clean and remove the oxide layer on the surface of the foamed nickel; 4 It is passed into a reaction tube furnace under a certain ambient pressure, so that it is equivalent to a concentration of 0.1vol%-2vol% of the total gas flow. After reacting with the reaction gas for 3-10min, the sample is in Ar (300-800sccm) and 2 (100-400sccm) and rapidly cooled to room temperature at a rate of 150-300°C / min; that is, a three-...

Embodiment 1

[0035] Preparation of three-dimensional graphene on nickel foam by chemical vapor deposition;

[0036] Adopt nickel foam as three-dimensional graphene growth support template, the nickel foam that will be cut into pieces is put into quartz tube furnace; Make nickel foam material in Ar(500sccm) and H 2 (200sccm) is heated to 1000°C in the tube furnace under the environment, and annealed for 10min, cleans and removes the oxide layer on the foamed nickel surface; then the CH with a flow rate of 5sccm 4 It is passed into a reaction tube furnace under a certain ambient pressure so that it corresponds to a concentration of 0.7 vol% of the total gas flow. After the reaction gas reacted for 5min, the sample was heated in Ar (500sccm) and H 2 (200sccm) and rapidly cooled to room temperature at a rate of 200°C / min; that is, to obtain a three-dimensional graphene sample on the surface of nickel foam;

[0037] Prepare an electrodeposition precursor solution containing Au;

[0038] Firs...

Embodiment 2

[0043] S101, preparing three-dimensional graphene on nickel foam by chemical vapor deposition;

[0044] Adopt nickel foam as three-dimensional graphene growth support template, the nickel foam that will be cut into pieces is put into quartz tube furnace; Make nickel foam material in Ar(500sccm) and H 2 (200sccm) is heated to 1000°C in the tube furnace under the environment, and annealed for 10min, cleans and removes the oxide layer on the foamed nickel surface; then the CH with a flow rate of 5sccm 4 It is passed into a reaction tube furnace under a certain ambient pressure so that it corresponds to a concentration of 0.7 vol% of the total gas flow. After the reaction gas reacted for 5min, the sample was heated in Ar (500sccm) and H 2 (200sccm) and rapidly cooled to room temperature at a rate of 250°C / min; that is, to obtain a three-dimensional graphene sample on the surface of nickel foam;

[0045] S102, preparing an electrodeposition precursor solution containing Au;

[0...

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Abstract

The invention discloses a preparation method of double quantum dot modified flower-like three-dimensional graphene and a photocatalytic material, wherein the method includes: preparing three-dimensional graphene on nickel foam; preparing an electrodeposition precursor solution containing Au; electrochemical deposition Preparation of Au@TiO 2 @3DGFs composite materials: Put three-dimensional graphene into the precursor solution as a working electrode to deposit TiO 2 and precious metal Au double quantum dots, forming flower-like three-dimensional graphene during the electrochemical deposition process, with Au and TiO evenly distributed on its surface. 2 Double quantum dots. The three-dimensional graphene prepared by the invention has a low recombination rate of electron-hole pairs, high photoelectrocatalytic activity, and high utilization rate of sunlight.

Description

technical field [0001] The invention relates to the technical field of photoelectric catalysis and hydrogen production, in particular to a preparation method of double quantum dot-modified flower-shaped three-dimensional graphene and a photocatalytic material. Background technique [0002] Hydrogen energy is considered as an ideal clean and renewable energy because of its abundant resources. So far, most of the traditional hydrogen production methods require a lot of energy consumption, resulting in high production costs and low efficiency. Among various possible hydrogen production methods, photoelectrocatalysis (PEC) has been proven to be a promising hydrogen production technology due to its advantages such as low energy loss and small electron-hole recombination rate. [0003] Among them, titanium dioxide (TiO 2 ) as a good photocatalytic material due to low cost, corrosion resistance, photocatalytic stability under irradiation, good photocatalytic oxidation ability and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J23/52B01J21/06B01J21/18B01J35/02B01J37/34C25B1/04C25B11/06B01J35/00
CPCC25B1/04C25B11/04B01J21/063B01J21/18B01J23/52B01J37/348B01J35/39Y02E60/36
Inventor 许志
Owner XIFENG 2D FUJIAN MATERIAL TECH CO LTD
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