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108results about How to "Half maximum width" patented technology

Low-cost method for synthesizing ZnxCd1-xSe (x is more than or equal to zero and less than or equal to 1) and related core/shell structured semiconductor nanocrystals thereof

The invention provides a method for synthesizing ZnxCd1-xSe (x is more than or equal to 0 and less than or equal to 1) and ZnxCd1-xSe/ZnSe, ZnxCd1-xSe/ZnS and ZnxCd1-xSe core/shell structured semiconductor nanocrystals thereof by using long-chain fatty acid salts of cadmium and zinc as precursors of cadmium and zinc, which is the most economical and environment-friendly method for synthesizing high-quality ZnxCd1-xSe and related core/shell structured semiconductor nanocrystals thereof currently. The method avoids using tributylphosphine (TBP) or trioctylphosphine (TOP) dissolved elementary selenium as the precursor of selenium currently in the world, but adopts octadecylene (ODE) dissolved elementary selenium as the precursor of selenium; and the obtained nanocrystals have the quality equal to that of nanocrystals which are synthesized when the TBP or TOP dissolved selenium powder is used as the precursor of selenium. The method is called a phosphine-free method, has the advantages of simple synthesizing process, good repeatability, safety, environmental protection, no need of glove box, and cost conservation of over 60 percent. The synthesized ZnxCd1-xSe and related core/shell structured nanocrystals have a fluorescence range of between 400 and 650nm, and have the advantages of uniform particle size distribution, high efficiency of fluorescent quantum yield (40 to 70 percent) and narrow full width at half maximum. The method is also suitable for synthesizing the ZnxCd1-xS, HgxCd1-xSe, ZnxCd1-xTe nanocrystals and related core/shell structures thereof. More importantly, the method can synthesize high-quality nanocrsytals on a large scale, and has enormous application value both in laboratory synthesis and industrial synthesis.
Owner:HENAN UNIVERSITY

Preparation method of polymer photonic crystal with photonic band gap capable of being adjusted in wide range

ActiveCN103194800AExcellent size monodisperse propertiesApparent volume swelling behaviorFrom gel statePolycrystalline material growthPhotonic bandgapMicrosphere
The invention belongs to a field of high-molecular material, and relates to a preparation method of a polymer photonic crystal with a photonic band gap capable of being adjusted in a wide range of UV-visible-near infrared. The method comprises firstly synthesizing polymer hydrogel polymer microsphere with monodisperse size, obtaining the polymer photonic crystal through centrifugation, deposition and other ways, adjusting content of injected water so that a dimensional ordered structure of the microsphere of the polymer photonic crystal occurs controllable volume expansion, and furthermore adjustability of crystal lattice period of the ordered structure becomes large, and a peak position of a diffraction spectrum occurs redshift, thereby obtaining the polymer photonic crystal with the photonic band gap in a wide range of UV-visible-near infrared. The polymer photonic crystal can be used for preparing sensitive optical path conversion devices. The material capable of rapidly responding according to external environmental stimulation and obtaining synchronous signal conversion develops a polymer responsive material system, and has important application value in aspects of sensor elements, optical information storage and regulation, and biological monitoring.
Owner:JILIN UNIV

Polycyclic boron-containing compound and electronic device thereof

The invention relates to a polycyclic boron-containing compound and an electronic device thereof. By introducing the boron element, the compound with rigid structural characteristics is constructed, and the rigid structure can effectively inhibit vibration relaxation caused by molecular vibration and rotation, thereby being beneficial to enhancing the fluorescence quantum yield of the molecules and reducing the half-peak width of the luminescent spectrum. In addition, due to the rigid structure, the molecules have excellent film-forming property and thermal stability, and the stability of thedevice can be further improved; in addition, since the polycyclic boron-containing compound is positioned at the 1 or 4 positions of carbazole and fluorenyl elements, no isomer is generated during preparation, and purification is facilitated. The electroluminescent device prepared from the compound provided by the invention has the advantages of low driving voltage, high luminous efficiency, longservice life, high spectral color purity and the like. In addition, the preparation method of the polycyclic boron-containing compound is simple, raw materials are easy to obtain, the materials are easy to purify, and the industrial development requirement can be met.
Owner:SUZHOU JOYSUN ADVANCED MATERIALS CO LTD

High-temperature-resistance quantum dot fluorescent material and preparation method thereof

The invention provides a high-temperature-resistance quantum dot fluorescent material and a preparation method thereof. The preparation method comprises the following steps: preparing a Se solution; synthesizing quantum dots: putting a cadmium source, a zinc source, fatty acid and an organic solvent into a container to obtain a mixture, heating the mixture obtained in the (S210) to 80-110 DEG C, carrying out air exhausting for 30-40 minutes, heating to 280-310 DEG C, adding the Se solution, maintaining the temperature for a period of time, heating to 300-310 DEG C, adding the Se solution again, maintaining the temperature for 20-40 minutes, and cooling to the room temperature, so as to obtain a CdZnSe@ZnSe quantum dot stock solution; and purifying the obtained CdZnSe@ZnSe quantum dot stock solution, so as to obtain the high-temperature-resistance quantum dot fluorescent material. The high-temperature-resistance quantum dot fluorescent material prepared by virtue of the preparation method has excellent high temperature stability, can still present excellent fluorescence property at 310 DEG C, is narrow in half peak breadth and good in monodispersity and has good application prospects in the field of electro-optical display.
Owner:厦门世纳芯科技有限公司

White-light infrared up-conversion composite luminescent material with core-shell structure

The invention provides a white-light infrared up-conversion composite luminescent material with a core-shell structure. The composite material is characterized in that an infrared up-conversion nano-material is used as a core structure of the composite material; a quantum dot material with orange red fluorescence characteristics is used as a shell structure of the composite material; a chemical hydrothermal reaction is carried out so as to synthesize the white-light-emitting infrared up-conversion composite luminescent material with the core-shell structure; light with a wavelength of 980 nm is used as infrared excitation light; and the up-conversion nano-material is allowed to emit blue light under infrared excitation, and then quantum dots are allowed to emit orange red light under excitation of up-conversion blue light, so the infrared up-conversion composite luminescent material emitting white light is obtained. Since rare-earth up-conversion luminescent materials and semiconductor quantum dots are wide in photoluminescent band, high in color purity, brilliant in color, strong in light absorption capability, high in conversion efficiency, wide in the distribution area of emission wavelength, stable in physical and chemical performance, resistant to high temperature and capable of withstanding the action of large-power electron beams, high-energy radiation and strong ultraviolet light, the rare-earth up-conversion luminescent materials and semiconductor quantum dots are extensively applied to fields like illumination, displaying, development, medical radiography, detection and recording of radiation fields, etc., large in the scale of industrial production and consumer market and further applied to other emerging technical fields.
Owner:SHANGHAI KERUN PHOSPHOR TECH

Quantum dots and preparation method thereof

The invention discloses a preparation method of quantum dots, wherein the preparation method comprises the steps: preparing ZnCdSe seed crystals, growing a ZnSe transition layer on the ZnCdSe seed crystals, and sequentially coating the ZnSe transition layer with a ZnSe shell layer and a ZnS shell layer. The invention also discloses the quantum dots prepared by the preparation method. Through the arrangement of the ZnSe transition layer, the relationship between a core and the shell layers is consolidated, the transition between the core and each shell layer is effectively controlled, and the defects between crystal lattices are reduced; the formation of other seed crystals in the quantum dots is inhibited through fatty acid so as to control the components, size and uniformity of the seed crystals of the quantum dots, anions are supplemented to carry out growth nucleation of the seed crystals, a quantum dot core structure with the ZnSe transition layer on the surface is formed, and then epitaxial growth of the ZnSe shell layer and the ZnS shell layer are sequentially carried out; lattice stress between components of the mixed crystal structure core and lattice stress between the core and the shell are reduced, and the prepared quantum dots are adjustable in peak position in visible light, narrow in half-peak width and high in quantum efficiency.
Owner:CHINA BEIJING BEIDA JUBANG SCI & TECH CO LTD +1

Photonic crystal preparation method and photonic crystal prepared by method

The invention discloses a photonic crystal preparation method. The photonic crystal preparation method comprises providing emulsion containing mono-dispersed particles, a surfactant and a solvent; applying the emulsion to a surface, of a substrate, where the photonic crystal needs to be formed to form a liquid pattern with the contact angle between the surface, of the substrate, where the photonic crystal needs to be formed ranging from 30 degrees to 120 degrees; and drying the substrate with the liquid pattern to obtain the photonic crystal. By means of the drying temperature and the drying time, Pe satisfies the formula 2<Pe<10 or 0<Pe<0.4, and Pe=(3h<2>[eta]r/t<f><2>kTt)<1/2>. The photonic crystal preparation method is low in cost and high in preparation efficiency, in the reflection spectrum of the prepared photonic crystal pattern membrane, the half-peak width is reduced and can reach to 30-60nm, the obtained photonic crystal pattern membrane is flatter in surface and higher in assembly quality, and is brighter in color accordingly; and a thinner photonic crystal pattern membrane can be obtained at the same time. The photonic crystal preparation method is high in applicability, and is suitable for a plurality of substrates and a plurality of preparation techniques.
Owner:INST OF CHEM CHINESE ACAD OF SCI
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